Transcript
FRAM Standalone Memory FSEU Dec. 2011
Copyright 2011 FUJITSU SEMICONDUCTOR EUROPE GMBH
Memory Technology Comparison
SRAM DRAM
FLASH EEPROM
FRAM
fast unlimited random R/W access
slow block access ROM
fast unlimited random R/W access
volatile power required
none volatile
none volatile
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FRAM Technology
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Simple memory cell structure DRAM
FRAM WL
WL
BL
PL
(1/2 Vcc)
BL
FRAM is a CMOS memory with a DRAM-like cell structure where the conventional DRAM capacitor is replaced by a ferroelectric thin film (PZT) capacitor. 3
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FRAM capacitor Lead-Zirconate-Titanate (PZT) Crystal Unit Cell FRAM Capacitor electric field
Upper electrode PZT film Lower electrode
The application of an electric field result in an electric polarizaton of PZT Zr / Ti atom moves within the PZT This electric polarization remains even in the absence of an applied electric field. Two stable positions will be stored as digital (binary) data. -> Non-volatile storage cell 4
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PZT Hysteresis
voltage
level of polarization Q
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Read Access “ 0”
“ 1”
Cell information is detected by reading the voltage difference resulting from the change in polarisation charge when a voltage is applied to a cell. 6
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FRAM – A CMOS Friendly Process Ferroelectrics capacitor
CMOS Standard Metal Interconnect Process
Top electrode Ferroelectrics film Bottom electrode
Metal 2 (Bit Line)
Metal 1
FRAM Process
CMOS Standard Bulk Process Word Line
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FRAM - a mature technology
Shipping Quantity [Billion]
2.0
1.5
1.0
0.5
0
1999
0.35um (1T/1C)
0.35um (2T/2C)
0.5um (2T/2C)
2000
2001
2002
2003
2004
0.18um
2005
2006
2007
2008
2009 2010 2011
Calendar Year [CY] 8
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In-house Development and Production Fujitsu controls the whole process of development, production, marketing and sales Nantong Fujitsu Fab
Assembly and Final Test. FRAM Assembly
FIM Kyushu Fab
Assembly and Final Test FRAM Assembly
Mie Fab
FSL Headquarters FLS at Shinyokohama; FRAM R&D, Marketing, Sales IC Wafer Process – FRAM wafer 9
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Reliability Data Retention Ability to preserve data for long period of time Degradation modes after long storage time • degradation by depolarization • degradation by imprint
Negative impact
T₁ T2
• High temperature • Low writing voltage
depolarization
Imprint
Endurance Guaranteed number of access to each memory cell Fatigue as a limitation factor • Fatigue is the polarization loss due to repeated hysteresis cycling
Quality ensured Fujitsu FRAM devices are qualified based on worst case scenarios All aspects described above have been included in our quality tests 10
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FRAM Features
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Features of FRAM High Speed Writing like SRAM or DRAM No Erase Time, No Writing Pause Time Required Read Cycle Time = Write Cycle Time more than 25 times faster than EEPROM
Writing time (Cycle time)
[sec] EEPROM slow (3000ns)
10-1 10-3 10-5
FRAM - fast (110ns) 10-7 ＥＥＰＲＯＭ
ＦＲＡＭ
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Features of FRAM High Endurance in Rewriting 1010 = 10 billion times – 10,000 times more than EEPROM/Flash
FRAM – 1010 cycles EEPROM/FLASH - 106 cycles
example: access period of 100 Milliseconds (e.g. data logging)
1 day EEPROM
30 years FRAM
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Features of FRAM Low Power Consumption Operating current is required only for reading and writing. Current for data retention is unnecessary. High write voltage is unnecessary.
FRAM - low current EEPROM – higher current FLASH – high current
write operation current
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Features of FRAM Robust against radiation Up to 50kGray
Test Condition Gamma Ray Source : Co60 Irradiation Dosage : 5, 10, 50kGy
MB89R118
ICODE-SLI
Data Size FRAM 2K Bytes EEPROM 128Bytes
Strength
Fail Samples Data after Irradiation
50kGy
0/99
No Error
5kGy
2/2
Error (Data Changed)
10kGy
2/2
Error (Data Changed)
50kGy
2/2
Error (Data Changed)
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High Tamper Resistance ● Charge Accumulation Type Memory (EEPROM, FLASH) Charge is observed by SKPM(Scanning Kelvin Probe Microscope). Source: Microelectronics Reliability 45(2005)1514
● FRAM
Very difficult to read the cell data by any physical analysis.
No difference at analysis result by AFM (AFM: Atom Force Microscope). 16
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Memory Comparison
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FRAM Products
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FRAM Products FRAM
Standalone memories
Dual Interface
•parallel parallel I/F •serial serial I/F •up up to 4Mbit
•serial serial SPI I/F •UHF UHF EPCglobal C1G2 •up up to 32kbit
RFID •HF, HF, UHF •ISO15693 ISO15693 •ISO ISO 1800018000-6 •EPCglobal EPCglobal C1G2 •up up to 512kbit •SPI SPI I/F
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Smartcard
ASIC/COT custom design
•8/32bit 8/32bit CPU •contactless contactless •contact contact based •security security •DES/AES DES/AES etc.
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Lineup Standalone Memories Serial I2C
3V
1.8V
MB85R4001/2A Parallel
2Mb
8Mb
5V
MB85R8xxx Parallel
MB85R1001/2A Parallel
1Mｂ ｂ 256Kｂ ｂ
3V
5V
MB85RS2xxx Serial SPI (1.8 – 3V)
MB85R256F Parallel
MB85RS1xxx Serial SPI (1.8 – 3V) MB85RS256A Serial SPI
MB85RC256V 2 Serial I C (3 – 5V)
MB85RS256V Serial SPI MB85RS128A Serial SPI
64Kb
MB85RC128 Serial I2C MB85RC64 Serial I2C MB85RC64V Serial I2C (3 – 5V) Jan. 2012
16Kb
128Kｂ ｂ
Serial SPI
Parallel I/F
4Mb
3V
Planning Planning and and development development
MB85RC16 Serial I2C MB85RC16V Serial I2C (3 – 5V)
MB85RS64A/64 Serial SPI MB85RS64V Serial SPI MB85RS16 Serial SPI
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MB85RS16V Serial SPI
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CY
2009-
4Mb 8Mb
Product Status – Technology Migration 0.35µm
2010-
2011-
0.18µm
8Mbit Parallel ES
MB85R4001/2A Parallel (CS Jan/12)
4Mbit Parallel
2Mb 1Mb
2013-
2012-
Shrink size, High Performance MP
MB85R1001/2 Parallel
1Mbit Serial SPI
MB85R1001/2A Parallel
1Mbit Parallel
MB85RS256 Serial SPI
MP
MB85R256F Parallel
MB85RS256V Serial SPI
MB85RS256A Serial SPI
MB85RC256V I2C, CS Q4/2012
256Kbit Parallel
MB85RS128A Serial SPI
MB85RC128 Serial IIC MP MP
In In development development
MB85RC64 Serial IIC
ES
planning planning
MP
MB85RC16 Serial IIC
MB85RS64V SPI CS June 2012
MB85RS64A Serial SPI
Mass Mass Production Production
16Kb
256Kbit Serial SPI
MP
MP
64Kb 128Kｂ
256Kｂ
MP
MB85R256H Parallel
2Mbit Serial SPI
MP
MB85RS64 SPI (CS Jan 2012)
MB85RC16V SerialI2C 21
ES
MB85RC64V I2C CS Feb 2012 MB85RS16 SPI CS April 2012
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FRAM Memory Package Lineup 16Kb
64Kb
256Kb
128Kb
1Mb
2Mb
4Mb
8Mb
16Mb
8-pin SOP MB85RC16 MB85RC16V MB85RC64 MB85RC64V MB85RS64A MB85RS64V MB85RS64
MB85RS256A
MB85RS128A
28-pin SOP MB85R256F
28-pin TSOP MB85R256F
48-pin TSOP MB85R1001A MB85R1002A
I2C
SPI
MB85R4001A MB85R4002A
parallel 22
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Specification Standalone FRAM
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MB85RS64A Migration Migration path Existing product: MB85RS64APNF Product with improved cell structure: MB85RS64PNF Recommended for new project: MB85RS64PNF
Feature Comparison MB85RS64A / MB85RS64 Feature
MB85RS64A
MB85RS64
Pin Assignment
Compatible
Command Sequence
Compatible
Clock Speed
Compatible
Data Retention
10 years at 55°C
10 years at 85°C
Supply Power range
3.0v～3.6v
2.7v～3.6v
Product Status
Mass Production
ES now, CS Jan.2012
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MB85RC64V - I2C interface – 5V
New!
Features memory configuration
8bits x 8K words
supply voltage
3V … 5.5V
operation current, standby current
40µA (typ. @400kHz), 10µA (tbd)
I/F, operation frequency
I2C, 400kHz
temperature range
-40°C … +85°C
data retention
10years (+85°C)
read/write endurance
min 1010 times/bit
package
SOP8
■ ■
Engineering samples: available now Mass Production: Feb. 2012
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MB85RC128/64/16 - I2C interface – 3V Features memory configuration
8bits x 16K/8K/2K words
supply voltage
2.7V … 3.6V
operation current, standby current
<100µA (@400kHz), 5µA
I/F, operation frequency
I2C, 400kHz, 1MHz (MB85RC16)
temperature range
-40°C … +85°C
data retention
10years (+85°C)
read/write endurance
min 1010 times/bit
package
SOP8
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MB85RC16V - I2C interface – 5V Features memory configuration
8bits x 2K words
supply voltage
3V … 5.5V
operation current, standby current
40µA (@400kHz), 5µA
I/F, operation frequency
I2C, 400kHz,
temperature range
-40°C … +85°C
data retention
10years (+85°C)
read/write endurance
min 1010 times/bit
package
SOP8
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MB85RS256A/128A/64A - SPI interface Features memory configuration
8bits x 32K/16K/8K words
supply voltage
3.0V … 3.6V
operation current, standby current
5mA (@25MHz), 9µA
I/F, operation frequency
SPI, 25MHz (for 64K: 20MHz)
temperature range
-40°C … +85°C
data retention
10years (+55°C)
read/write endurance
min 1010 times/bit
package
SOP8
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MB85R256F - parallel interface Features memory configuration
8bits x 32K words
supply voltage
2.7V … 3.6V
operation current, standby current
5mA , 5µA
I/F, operation frequency
8bit parallel, 70ns access time
temperature range
-40°C … +85°C
data retention
10years (+55°C)
read/write endurance
min 1010 times/bit
package
SOP28, TSOP28
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MB85R1001/2 - parallel interface Features memory configuration
8bits x 128K words 16bits x 64K words
supply voltage
3.0V … 3.6V
operation current, standby current
10mA, 10uA
I/F, operation frequency
8bit parallel, 100ns access time 16bit parallel, 100ns access time
temperature range
-40°C … +85°C
data retention
10years (+55°C)
read/write endurance
min 1010 times/bit
package
TSOP48
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MB85R4001/2 - parallel interface Features memory configuration
8bits x 524K words 16bits x 262K words
supply voltage
3.0V … 3.6V
operation current, standby current
15mA / 50uA
I/F, operation frequency
8bit parallel, 120ns access time 16bit parallel, 120ns access time
temperature range
-40°C … +85°C
data retention
10years (+55°C)
read/write endurance
min 1010 times/bit
package
TSOP48
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FRAM Applications
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Applications for FRAM Metering Electrical meters, Gas meters, water meters Portable meters, industrial meter FRAM benefits • Fast writing • Endurance • Low power
Industrial Automation Logging applications • Motion Control • Security monitoring system • • • •
Environmental monitor Vending machine Event recorder ATM
• GPS • Cash register • Roboter
Batt ery
FRAM benefits • Endurance • Fast Writing Speed
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