Transcript
PH435 High Linearity InGaP HBT Amplifier Features
Applications
Functional Diagram
1500MHz - 3000MHz
Mobile Infrastructure
14.8 dB Gain at 2.3GHz
PCS, WCDMA, WiBro
+25 dBm P1dB
W-LAN / ISM
+42 dBm Output IP3
RFID / Fixed Wireless
4 3 2 1
Single Voltage Supply
Function
Pin No.
Lead-free / Green / RoHS-
RF IN
1
compliant SOT-89 Package
RF OUT / Bias
3
Ground
2,4
Description The PH435 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH435 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested
Specifications Symbol
S21
Parameters
Gain
Units
Freq.
Min.
Typ.
dB
1900 2140 2300 2600
MHz MHz MHz MHz
16.8 15.1 14.8 13.0
MHz MHz MHz MHz
-17 -17 -14 -11
S11
Input Return Loss
dB
1900 2140 2300 2600
S22
Output Return Loss
dB
1900 2140 2300 2600
MHz MHz MHz MHz
-17 -14 -14 -11
P1dB
Output Power @1dB compression
dBm
1900 2140 2300 2600
MHz MHz MHz MHz
25.5 25.5 25.5 26.0
OIP3
Output Third Order intercept
dBm
1900 2140 2300 2600
MHz MHz MHz MHz
42.0 42.0 42.5 39.5
1900 2140 2300 2600
MHz MHz MHz MHz
3.1 3.0 3.2 3.9
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
5/152
Rth
Thermal Resistance
°C/W
34
Max.
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +7dBm/tone separated by 1MHz.
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PH435 High Linearity InGaP HBT Amplifier 1900 MHz Application Circuit Frequency
1900 MHz
S21 : Gain
17.0 dB
S11 : Input Return Loss
-19 dB
5V 1uF
S22 : Output Return Loss
-19 dB
Output P1dB
+25.5 dBm
Output IP3 @7dBm
+42 dBm
IS-95A Ch. Power @ -45dBc ACPR
+19.0 dBm
Noise Figure
3.1 dB
20pF 22nH RF IN
1.5pF
2.0pF
RF OUT
1.0pF
Gain vs. Frequency
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
-6
18
-10
-12
S22(dB)
-5
16
-15
o
12 1800
1850
1900
1950
o
+25 C o -40 C o +85 C
-20 -25 1800
2000
1850
Frequency(MHz)
32
-18 +25 C o -40 C o +85 C
o
+25 C o -40 C o +85 C
14
Output Return Loss
0
20 S11(dB)
Gain(dB)
22
20pF
50Ω/6mm
1900
1950
-24 -30 1800
2000
1850
Frequency(MHz)
o
+7dBm/tone, +25 C
50
1950
2000
OIP3 vs. Temperature
Output IP3 vs. Frequency
P1dB vs. Frequency
1900 Frequency(MHz)
Freq=1900MHz, +7dBm/tone
46
30
44
26 24
40
o
1850
1900
1950
+25 C o -40 C o +85 C
35
30 1800
2000
40
1850
1900
1950
2000
2050
38
2100
ACPR IS-95 vs. Channel Power Frequency(MHz)
Frequency(MHz)
6
42
o
+25 C o -40 C o +85 C
22 20 1800
OIP3(dBm)
OIP3(dBm)
P1dB(dBm)
45
28
36 -40
-20
0
20
40
60
80
o
Temperature( C)
ACPR IS-95A vs. Channel Power
Noise Figure vs. Frequency
-40
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
-45
4
-50
ACPR(dBc)
NF(dB)
freq=1.9GHz
5
3
-60
2 1 0 1800
-55
-65
o
+25 C
-70
1850
1900 Frequency(MHz)
1950
2000
10
12
14
16
18
20
22
Output Channel Power(dBm)
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PH435 High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit Frequency
2140 MHz
S21 : Gain
15.4 dB
S11 : Input Return Loss
-20 dB
5V 1uF
S22 : Output Return Loss
-16 dB
Output P1dB
+26.0 dBm
Output IP3 @7dBm
+42 dBm
WCDMA Ch. Power @ -45dBc ACLR
+17.0 dBm
Noise Figure
3.0 dB
20pF 22nH RF IN
1.0pF
1.5pF
20
20pF
50Ω/6mm
RF OUT
1.2pF
Gain vs. Frequency
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
Output Return Loss
0 -5
16
-20
-10
14
S22(dB)
-10 S11(dB)
Gain(dB)
o
18
-30
10 2050
+25 C o -40 C o +85 C 2100
+25 C o -40 C o +85 C
-40
2150
2200
-50 2050
2250
2100
Frequency(MHz)
2200
OIP3(dBm)
24 22
2150
2200
44
40
6
+25 C o -40 C o +85 C
30 2050
40
2100
2150
2200
38
2250
Frequency(MHz) ACPR IS-95 vs. Channel Power
Frequency(MHz)
42
o
35
2250
2250
Freq=2140MHz, +7dBm/tone
46
o
+25 C o -40 C o +85 C
2200
OIP3 vs. Temperature
o
+7dBm/tone, +25 C
50
2150 Frequency(MHz)
45
2100
2100
Output IP3 vs. Frequency
P1dB vs. Frequency
26
20 2050
-25 2050
2250
Frequency(MHz)
28 P1dB(dBm)
2150
-20
OIP3(dBm)
30
-15
o
o
12
+25 C o -40 C o +85 C
36 -40
-20
0
20
40
60
80
o
Temperature( C)
W-CDMA ACLR vs. Channel Power
Noise Figure vs. Frequency
-40
3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset
freq=2.14GHz -45 ACLR(dBc)
NF(dB)
5 4 3
-50
-55
2 o
+25 C 1 2050
2100
2150 Frequency(MHz)
2200
2250
-60 10
12
14
16
18
20
Output Channel Power(dBm)
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PH435 High Linearity InGaP HBT Amplifier 2300 MHz Application Circuit
5V
Frequency
2300 MHz
S21 : Gain
15.0 dB
S11 : Input Return Loss
-15 dB
S22 : Output Return Loss
-15 dB
1uF
20pF
Output P1dB
+25.5 dBm
Output IP3 @7dBm
+42.5 dBm
Noise Figure
3.1 dB
22nH RF IN
2.0pF
1.8pF
1.2pF
RF OUT
1.5pF
Gain vs. Frequency
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
16
-10
-10
S22(dB)
-5
S11(dB)
-5
14
-15
o
+25 C o -40 C o +85 C
12
2250
2300
2350
6
-15 o
o
+25 C o -40 C o +85 C
-20 -25 2200
2400
2250
Frequency(MHz)
2300
2350
+25 C o -40 C o +85 C
-20 -25 2200
2400
2250
Frequency(MHz)
Noise Figure vs. Frequency
5
30
4
28
3 2
24
o
+25 C o -40 C o +85 C
o
2250
2300
2350
20 2200
2400
2250
2300
2350
2400
Frequency(MHz)
Frequency(MHz)
OIP3 vs. Temperature
Output IP3 vs. Frequency
Freq=2300MHz, +7dBm/tone
o
+7dBm/tone, +25 C
50
2400
26
+25 C 0 2200
2350
P1dB vs. Frequency
22
1
2300 Frequency(MHz)
32
P1dB(dBm)
NF(dB)
46 44
45 OIP3(dBm)
10 2200
Output Return Loss
0
18
OIP3(dBm)
Gain(dB)
20
20pF
50Ω/6mm
40
42 40
o
+25 C o -40 C o +85 C
35
30 2200
2250
2300
2350
2400
2450
38 36 -40
2500
-20
0
20
40
60
80
o
Frequency(MHz)
Temperature( C)
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PH435 High Linearity InGaP HBT Amplifier 2600 MHz Application Circuit
5V
Frequency
2600 MHz
S21 : Gain
13.0 dB
S11 : Input Return Loss
-12 dB
S22 : Output Return Loss
-11 dB
1uF
20pF
Output P1dB
+26.3 dBm
Output IP3 @9dBm
+39.5 dBm
Noise Figure
3.9 dB
22nH RF IN
1.0pF
1.0pF
0.75pF
RF OUT
1.5pF
Gain vs. Frequency
Supply Voltage
5V
Current
152 mA
Input Return Loss
0
16
-4
-4
14
-8
-8
12
8 2500
-12
+25℃ -40℃ +85℃
10
2550
2600
2650
+25℃ -40℃ +85℃
-16 -20 2500
2700
2550
2650
-12 +25℃ -40℃ +85℃
-16 -20 2500
2700
2550
Frequency(MHz)
Frequency(MHz)
8
2600
Output Return Loss
0
S22(dB)
18
S11(dB)
Gain(dB)
20pF
50Ω/6mm
Noise Figure vs. Frequency
2650
2700
Output IP3 vs. Frequency
P1dB vs. Frequency
32
2600 Frequency(MHz)
+9dBm/tone, +25oC
50
30
4
2
26 24
+25℃ -40℃ +85℃
22
+25℃ 2550
2600
2650
20 2500
2700
2550
Frequency(MHz)
2600
2650
+25℃ -40℃ +85℃
35
30 2500
2700
2550
2600
2650
2700
Frequency(MHz)
6FA W-CDMA ACLR vs. Channel Power
Freq=2600MHz, +7dBm/tone
46
40
Frequency(MHz)
OIP3 vs. Temperature
-38 -41
3GPP W-CDMA 6FA, Test Model5 + w/8HSPDSCH
freq=2.6GHz
44 ACLR(dBc)
0 2500
28
OIP3(dBm)
P1dB(dBm)
45
OIP3(dBm)
NF(dB)
6
42
-44 -47 -50
40
5MHz 10MHz
-53 38 -40
-20
0
20
40
60
-56 10
80
Temperature(℃)
12
14
16
Output Channel Power(dBm)
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PH435 High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Parameter
Rating
Unit
Supply Voltage
+6
V
Supply Current
220
mA
RF Power Input
12
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Junction Temperature for >106 hours MTTF
187
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
Product Code
Lot Number
ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 1 at +260°C Convection reflow, J-STD-020
Mounting Instructions
Evaluation Board Layout (4x4)
1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink.
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