Transcript
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A FEATURES
Base cathode
• 150 °C max. operation junction temperature • Designed and JEDEC-JESD47
2
qualified
according
to
• Fully isolated package (VINS = 2500 VRMS) • UL E78996 approved • Compliant to RoHS Directive 2002/95/EC
TO-220 FULL-PAK
1 Cathode
3 Anode
• Halogen-free according to IEC 61249-2-21 defintion (-M3 only)
APPLICATIONS
PRODUCT SUMMARY Package
These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met.
TO-220FP
IF(AV)
10 A
VR
1000 V, 1200 V
VF at IF
1.33 V
IFSM
185 A
trr
80 ns
TJ max.
150 °C
Diode variation
Single die
Snap factor
0.6
DESCRIPTION The VS-10ETF1..FP... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS
SYMBOL VRRM IF(AV)
VALUES
UNITS
1000 to 1200
V
10
Sinusoidal waveform
A
160
IFSM trr
1 A, 100 A/µs
VF
10 A, TJ = 25 °C
80
ns
1.33
V
- 40 to 150
°C
VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V
IRRM AT 150 °C mA
TJ
VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V
PART NUMBER VS-10ETF10FPPbF, VS-10ETF10FP-M3
1000
1100
VS-10ETF12FPPbF, VS-10ETF12FP-M3
1200
1300
4
ABSOLUTE MAXIMUM RATINGS PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Revision: 10-Jan-12
TEST CONDITIONS
VALUES
TC = 95 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated VRRM applied
160
10 ms sine pulse, no voltage reapplied
185
10 ms sine pulse, rated VRRM applied
128
10 ms sine pulse, no voltage reapplied
180
t = 0.1 to 10 ms, no voltage reapplied
1800
UNITS A
A2s A2s
Document Number: 94093 1 For technical questions within your region:
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VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS SYMBOL
PARAMETER Maximum forward voltage drop
VFM rt
Forward slope resistance
VF(TO)
Threshold voltage Maximum reverse leakage current
IRM
TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C
UNITS
1.33
V
22.9
m
0.96
V
0.1
VR = Rated VRRM
TJ = 150 °C
VALUES
mA
4
RECOVERY CHARACTERISTICS SYMBOL
PARAMETER Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C
S
Snap factor
VALUES
UNITS
310
ns
4.7
A
1.05
μC
IFM
trr t
dir dt
0.6
Qrr IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance junction to case
RthJC
Maximum thermal resistance junction to ambient
RthJA
Typical thermal resistance, case to heatsink
RthCS
DC operation
Marking device
Revision: 10-Jan-12
UNITS
- 40 to 150
°C
2.5 62
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
°C/W
0.5 2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm (lbf · in)
Case style TO-220 FULL-PAK
10ETF10FP 10ETF12FP
Document Number: 94093 2 For technical questions within your region:
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[email protected],
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VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series www.vishay.com
Vishay Semiconductors 24
10ETF.. Series RthJC(DC) = 2.5 °C/W
140
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
150
130 Ø
120
Conduction angle
110 100 90
60°
80
120° 180°
30°
DC 180° 120° 90° 60° 30°
20 16 12
RMS limit
8
Ø
Conduction period 4
10ETF.. Series TJ = 150 °C
90° 0
70 0
2
4
6
10
12
0
4
6
8
10
12
16
14
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
180
10ETF.. Series RthJC(DC) = 2.5 °C/W
130 Ø
Conduction period
120 110 100 90 30° 80
120° DC
60°
At any rated load condition and with rated VRRM applied following surge.
160
Peak Half Sine Wave Forward Current (A)
140
Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
140 120 100 80 60
180°
90°
10ETF.. Series
40
70 0
2
4
6
8
10
12
14
16
18
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
16
200 180° 120° 90° 60° 30°
14 12
180
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward Power Loss (W)
2
Average Forward Current (A)
150
Maximum Allowable Case Temperature (°C)
8
10 RMS limit
8 6
Ø
Conduction angle 4 10ETF.. Series TJ = 150 °C
2
0
2
4
6
8
10
Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
160 140 120 100 80 60
0
Maximum non-repetitive surge current versus pulse train duration.
40 0.01
10ETF.. Series 0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 10-Jan-12
Document Number: 94093 3 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series Vishay Semiconductors 2.0
1000
10ETF.. Series TJ = 25 °C
TJ = 150 °C TJ = 25 °C
Qrr - Maximum Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
www.vishay.com
100
10
1 0.5
IFM = 8 A 1.2
IFM = 5 A
0.8 IFM = 2 A 0.4
IFM = 1 A
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
40
80
120
160
200
Instantaneous Forward Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
5 10ETF.. Series TJ = 150 °C
10ETF.. Series TJ = 25 °C
0.5
Qrr - Maximum Reverse Recovery Charge (µC)
trr - Maximum Reverse Recovery Time (µs)
1.6
10ETF.. Series
0.6
IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A
0.4 0.3 0.2 0.1 0
IFM = 10 A
4
IFM = 8 A
3
IFM = 5 A
2
IFM = 2 A
1
IFM = 1 A 0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.8
20 10ETF.. Series TJ = 25 °C
0.6
Irr - Maximum Reverse Recovery Current (A)
10ETF.. Series TJ = 150 °C
trr - Maximum Reverse Recovery Time (µs)
IFM = 10 A
IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A
0.4
0.2
0
IFM = 10 A
16
IFM = 8 A 12
IFM = 5 A
8
IFM = 2 A IFM = 1 A
4
0 0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 10-Jan-12
Document Number: 94093 4 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series www.vishay.com
Vishay Semiconductors 25
Irr - Maximum Reverse Recovery Current (A)
10ETF.. Series TJ = 150 °C
IFM = 10 A
20 IFM = 8 A 15
IFM = 5 A IFM = 2 A
10
IFM = 1 A
5
0 0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Steady state value (DC operation)
1
10ETF.. Series
Single pulse
0.1 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 10-Jan-12
Document Number: 94093 5 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
12
FP
PbF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
4
-
E = Single diode Package: T = TO-220 5
-
Type of silicon: F = Fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
FULL-PAK
8
-
Environmental digit:
02 = 200 V 04 = 400 V 06 = 600 V
PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example) PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-10ETF10FPPbF
50
1000
Antistatic plastic tubes
VS-10ETF10FP-M3
50
1000
Antistatic plastic tubes
VS-10ETF12FPPbF
50
1000
Antistatic plastic tubes
VS-10ETF12FP-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS Dimensions Part marking information
Revision: 10-Jan-12
www.vishay.com/doc?95005 TO-220 FP PbF
www.vishay.com/doc?95009
TO-220 FP -M3
www.vishay.com/doc?95440
Document Number: 94093 6 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters 10.6 10.4
Hole Ø
3.4 3.1 2.8 2.6
3.7 3.2
7.31 6.91 16.0 15.8
16.4 15.4
10°
3.3 3.1 13.56 13.05
2.54 TYP.
0.9 0.7
0.61 0.38
2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6
5° ± 0.5°
Revision: 20-Jul-11
5° ± 0.5°
1.4 1.3
2.85 2.65
1.15 TYP. 1.05
Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95005 1 For technical questions within your region:
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[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice www.vishay.com
Vishay
Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
