Transcript
OPEP-33-A4Q1RH
1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z 2x5 pin SFF package with SC Receptacle z 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps receiver z Integrated with WDM filter to cut 1550nm and 1650nm optical signal off z Single +3.3V power supply z LVPECL electrical signal interface z LVTTL Bias Control input and Rx Signal Detect output z Laser Class 1 Product which comply with the requirements of IEC 60825-1 and IEC 60825-2
Description
Application
DELTA’s GE-PON ONU transceiver OPEP-33-A4Q1RH is designed for Gigabit Ethernet Passive Optical Network transmission.
z IEEE 802.3ah 1000BASE-PX10-U z GE-PON ONU z Burst Mode Application
The module is contained in a 2x5 SFF
z FTTx WDM Broadband Access
package with standard SC receptacle connector. The module consists 1310nm FP laser, InGaAs PIN, Preamplifier and WDM filter in a high-integrated optical sub-assembly, and it receives up to 1.25Gbps of continuous data at 1490nm, and transmits 1.25Gbps of burst-mode data at 1310nm.
z OPEP-33-A4Q1RH data link up to 10km in 9/125um single mode fiber.
1 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH 1. Absolute Maximum Ratings Parameter Storage Temperature Storage Ambient Humidity Power Supply Voltage Signal Input Voltage Receiver Damage Threshold Lead Soldering Temperature/Time Lead Soldering Temperature/Time
Symbol Ts HA VCC
Min. -40 5 -0.3 -0.3 +2
Typ.
TSOLD TSOLD
Max. 85 95 4 Vcc+0.3 260/10 380/10
Unit ºC % V V dBm ºC/sec ºC/sec
Note
Note (1) Note (2)
Note (1). Suitable for wave soldering Note (2). Only for soldering by iron
2. Recommended Operating Conditions Parameter Ambient Operating Temperature Ambient Humidity Power Supply Voltage Power Supply Current Power Supply Noise Rejection
Symbol TA HA VCC ICC
Min. 0 5 3.13 1.25
Data Rate
-100ppm
Typ. 3.3
1.25
Transmission Distance
Max. 70 85 3.47 300 100 1.25 +100ppm
Unit ºC % V mA mVp-p
Note Without air flow Non-condensing
100Hz to 1MHz
Gbps
10
km
Typ.
Max. +4 +7
1310
1360
Unit dBm dBm dB nm nm dBm
3. Specification of Transmitter Parameter Average Launched Power Launched power (Peak.) Extinction Ratio Center Wavelength Spectrum Width (RMS) Transmitter OFF Output Power Laser Burst On Time Laser Burst Off Time Optical Rise/Fall Time Total Jitter Optical Return Loss Tolerance Relative Intensity Noise Optical Transmitter Reflectance Transmitter and Dispersion Penalty Output Eye Mask {X1,X2,Y1,Y2,Y3}
Symbol PO PP ER λC σ POff Ton Toff tr/tf tJ ORLT RIN15OMA
Min. -1 9 1260
Compliant with IEEE 802.3ah
-45 32 32 260 128 15 -113 -6 TDP 2.8 Compliant with IEEE 802.3ah {0.22,0.375,0.20,0.20,0.30}
ps ps dB dB/Hz dB dB
Note Note (1)
FP Laser Note (4)
Note (2) Note (3)
Note (5)
Note (1). Launched power (avg.) is power coupled into a single mode fiber with master connector. Note (2). These are unfiltered 20-80% values. Note (3). Measure at 27-1 NRZ PRBS pattern 2 DELTA ELECTRONICS, INC.
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OPEP-33-A4Q1RH Note (4). Transmitter spectral limits Center Wavelength
Transmitter Spectral Limits 4
3
RMS (nm)
nm 1260 1270 1280 1290 1295 1297 1329 1331 1340 1350 1360
RMS spectral width(max) 1000Base-PX10-U nm 2.09 2.52 3.13
2
3.50 1
0
3.06 2.58
1240
1260
1280
1300 1320 Center Wavelength (nm)
1340
1360
1380
Note (5). Transmitter eye mask definition 1+ Y 3
Normalized Amplitude
1 1- Y1 0.5 Y1 0 - Y2
0
X1
X2
1- X2 1- X1
1
Normalized Time
4. Specification of Receiver Parameter Input Optical Wavelength Receiver Sensitivity Input Saturation Power (Overload) Signal Detect -Assert Power Signal Detect -Deassert Power Signal Detect Hysteresis Data Output Rise/Fall time Receiver 1480 to 1500nm Reflectance Optical Isolation 1260 to 1360nm from External 1550 to 1560nm Source 1640 to 1665nm
Symbol λIN PIN PSAT PA PD PA-PD tr/tf
Min. 1480 -3 -44 0.5
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Typ. 1490
Max. 1500 -26
6 260
Unit nm dBm dBm dBm dBm dB ps
-12
dB
-43 -33 -33
dB dB dB
-26 2
Note PIN-PD Note (1)
Note (2) Note (3) Note (4)
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH Note (1). Measured with Light source +1dBm, 1490nm, ER=9dB; BER =<10-12@PRBS=27-1 NRZ This assurance should be met with asynchronous data flowing out of the optical transmitter of the system under test. The output data pattern from the transmitter of the system under test is a repetition of alternate 0/1 pattern as defined for this measurement. Note (2). When SD deasserted, the data output is Low-level (fixed) Note (3). These are 20%~80% values. Note (4). Measured at wavelength of 1490nm.
5. Electrical Interface Characteristics Parameter Transmitter Total Supply Current Differential line input Impedance Differential Data Input Swing Data Input Voltage- High Data Input Voltage- Low BiasCNT(n) Input Voltage- High BiasCNT(n) Input Voltage- Low Receiver Total Supply Current Differential Data Output Swing Signal Detect Output Voltage-High Signal Detect Output Voltage-Low
Symbol
Min.
Typ.
ICC RIN VDT VIH-VCC VIL-VCC VBCH VBCL
80 400 -1.165 -1.810 2 0
100
ICC VDR VLOSH VLOSL
400 2 0
Max.
Unit
Note
A 120 1600 -0.880 -1.475 Vcc 0.8
mA Ohm mVp-p V V V V
Note (1)
B 1200 Vcc+0.3 0.8
mA mVp-p V V
LVPECL LVTTL Note (1) Note (2) LVTTL
Note (1). A (TX)+ B (RX) = 300mA (Not include termination circuit) Note (2). Internally AC coupled, but requires a 100Ohm differential termination at or internal to Serializer/ Deserializer.
6. Transmitter Burst Mode Timing Characteristics Parameter BiasCNT(n) Enable Duration Interval of BiasCNT(n) Signal
Symbol
Min. 1 0.112
Typ.
Max. 1000000
Unit us us
Note
BiasCNT(n) Enable Duration
BiasCNT(n)
Interval of BiasCNT(n) Signal
4 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH VccT VccT < 3.1V VccT > 3.1V
BiasCNT(n) X High Low
Data Input X X No Yes
Optical Output OFF OFF Other Laser bias and modulation signal output
X = Don’t care Other = Less than +7dBm (peak) High = Logic high level, Low = logic low level No = No Data Input, Yes = Data Input, OFF = Optical Power is less than –45dBm
H BiasCNT(n) L Data Input
Optical Output
Within 15% of steady state
Ton
Toff
7. Pin Description Tx/Rx
Pin No. 1 2
I/O
Rx
3
O
4 5 6 7 8 9 10
O O
Tx
I I I
Pin Name VeeR VccR SD
Description Receiver Ground +3.3V Receiver Power Supply Normal Optical Input indicated by logic “High”, and No Optical Input indicated by logic “Low”. (LVTTL) RD(n) Inverted Receiver Data Output (AC-Coupled CML output) RD(p) Non-Inverted Receiver Data Output (AC-Coupled CML output) VccT +3.3V Transmitter Power Supply VeeT Transmitter Ground BiasCNT(n) Negative pulse which control the ONU burst mode operation TD(p) Non-Inverted Transmitter Data Input TD(n) Inverted Transmitter Data Input MS Mounting studs/ connect this pin to Chassis ground HL EMI Shielding Leads/ connect this pin to Chassis/ Signal ground
5 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH 8. Recommended Interface Circuit DELTA GEPON ONU Module 1uH
6. VccT
3.3V 10uF
100nF
100nF 1uH 8. BiasCNT(n)
BiasCNT(n)
Transmitter
9. TD(p)
Coupled interface
10. TD(n) 7. VeeT
Protocol IC
2. VccR
SerDes IC 10uF
100nF 100ohm
100nF
5. RD(p)
Z0=50ohm
4. RD(n)
Z0=50ohm 100nF
VccR 3. SD
SD
Receiver
RES
1. VeeR * RES is the internal 4.7K to 10K Ohms pull-up resistor.
DC - Coupled interface
Coupled interface
AC - Coupled interface
3.3V 130ohm
Z0=50ohm Host Board
82ohm
100nF 100ohm
DELTA ONU
Z0=50ohm Host Board
Z0=50ohm
150ohm
DELTA ONU
Z0=50ohm 130ohm
150ohm
100nF
82ohm
3.3V
6 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH 9. Outline Dimensions Parameter Mechanical Dimensions Connector Type
Unit mm -
Description 48.3x13.5x9.6 SC/UPC connector
Note IEC-61754-4
. J r e t p a h c b u S R F n oC i t 1 a 2 i
t c ds , a u r d d r A a o d r D P Fn a rh t s e te s i aw c L n s a em 1l i r s po s mr f a l oe C Cp
W eek (52W eeks/Y ear) : 1月 2日 =01
7 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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OPEP-33-A4Q1RH 10. Regulatory Compliance Feature
Test Method
Electrostatic Discharge (ESD) to the Electrical Pins
Human Body Model MIL-STD-883E Method 3015.7 (HBM) EIA-JESD22-A114
Electrostatic Discharge (ESD) to the Simplex Receptacle
Contact Discharge
Performance
Machine Model (MM) EIA-JESD22-A115
Air Discharge
Radio Frequency Electromagnetic Field Immunity
IEC/EN 61000-4-2 IEC/EN 61000-4-2 IEC/EN 61000-4-3
(1) Satisfied with electrical characteristics of product spec. (2) No physical damage
FCC Part 15 Class B EN 55022 Class B (CISPR 22A)
Electromagnetic Interference (EMI)
Laser Eye Safety
Reference
FDA/CDRH
FDA 21CFR 1040.10, 1040.11
CDRH File # 0420993
TUV
IEC/EN 60825-1 IEC/EN 60825-2
TUV Certificate R50032471
TUV
IEC/EN 60950
UL/CSA
UL 60950
#
Component Recognition UL File # E239394
Appendix A. Document Revision Version No. S0 S1
Date 2007-05-28 2008-09-01
Description Preliminary datasheet Update the outline dimensions
8 DELTA ELECTRONICS, INC.
Revision: S1 09/01/2008
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