17.0 Ghz To 20.0 Ghz, Gaas, Mmic, I/q Upconverter Hmc7911 Data Sheet

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17.0 GHz to 20.0 GHz, GaAs, MMIC, I/Q Upconverter HMC7911 Data Sheet FEATURES GENERAL DESCRIPTION Conversion gain: 18 dB typical Sideband rejection: 30 dBc typical Input power for 1 dB compression (P1dB): 2 dBm typical Output third-order intercept (OIP3): 33 dBm typical 2× local oscillator (LO) leakage at RFOUT: 10 dBm typical 2× LO leakage at the IF input: −25 dBm typical RF return loss: 13 dB typical LO return loss: 10 dB typical 32-lead, 5 mm × 5 mm LFCSP package The HMC7911 is a compact gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant, low stress, injection molded plastic LFCSP package that operates from 17 GHz to 20 GHz. This device provides a small signal conversion gain of 18 dB with 30 dBc of sideband rejection. The HMC7911 uses a variable gain amplifier preceded by an in-phase/quadrature (I/Q) mixer that is driven by an active 2× local oscillator (LO) multiplier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC7911 is a much smaller alternative to hybrid style single sideband (SSB) upconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques. APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors NIC IF1 30 29 28 27 26 VDRF1 IF2 31 VGRF NIC 32 VESD NIC FUNCTIONAL BLOCK DIAGRAM 25 VGMIX 1 24 NIC NIC 2 23 NIC NIC 3 22 VDRF2 NIC 4 21 VCTL1 HMC7911 GND 6 20 VCTL2 19 VDRF3 2× 13 14 15 16 NIC 12 GND 11 RFOUT 10 GND 9 VDET 17 NIC VREF GND 8 VDLO2 18 VDRF4 VDLO1 LOIN 7 EPAD 13730-001 NIC 5 Figure 1. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC7911 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Leakage Performance ................................................................. 16 Applications ....................................................................................... 1 Return Loss Performance .......................................................... 17 General Description ......................................................................... 1 Power Detector Performance.................................................... 18 Functional Block Diagram .............................................................. 1 Spurious Performance ............................................................... 19 Revision History ............................................................................... 2 Theory of Operation ...................................................................... 20 Specifications..................................................................................... 3 Applications Information .............................................................. 21 Absolute Maximum Ratings............................................................ 4 Biasing Sequence ........................................................................ 21 Thermal Resistance ...................................................................... 4 Local Oscillator Nulling ............................................................ 21 ESD Caution .................................................................................. 4 Evaluation Printed Circuit Board ............................................ 23 Pin Configuration and Function Descriptions ............................. 5 Outline Dimensions ....................................................................... 24 Interface Schematics..................................................................... 6 Ordering Guide .......................................................................... 24 Typical Performance Characteristics ............................................. 7 REVISION HISTORY 4/16—Revision 0: Initial Version Rev. 0 | Page 2 of 24 Data Sheet HMC7911 SPECIFICATIONS TA = 25°C, IF = 1 GHz, VDLOx = 5 V, VDRFx = 5 V, VCTLx = −5 V, VESD = −5 V, VGMIX = −0.5 V, LO = 4 dBm. Measurements performed with lower sideband selected and external 90° hybrid at the IF ports, unless otherwise noted. Table 1. Parameter OPERATING CONDITIONS Frequency Range Radio Frequency (RF) Local Oscillator (LO) Intermediate Frequency (IF ) LO Drive Range PERFORMANCE Conversion Gain Conversion Gain Dynamic Range Sideband Rejection Input Power for 1 dB Compression (P1dB) Output Third-Order Intercept (OIP3) at Maximum Gain 2× LO Leakage at RFOUT1 2× LO Leakage at IFx2 Noise Figure Return Loss RF LO IFx2 POWER SUPPLY Total Supply Current LO Amplifier RF Amplifier3 Min Typ 17 10.25 DC 4 13.5 30 25 28 1 Rev. 0 | Page 3 of 24 Unit 20 11.75 3.5 8 GHz GHz GHz dBm 18 34 30 2 33 10 −25 14 dB dB dBc dBm dBm dBm dBm dB 13 10 18 dB dB dB 100 220 mA mA The LO signal level at the RF output port is not calibrated. Measurements taken without 90° hybrid at the IF ports. 3 Adjust VGRF between −2 V and 0 V to achieve a total variable gain amplifier quiescent drain current = 220 mA. 2 Max HMC7911 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Drain Bias Voltage VDRFx, VDLOx, VREF, VDET Gate Bias Voltage VGRF VCTLx, VESD VGMIX LO Input Power IF Input Power Maximum Junction Temperature Storage Temperature Range Operating Temperature Range Reflow Temperature ESD Sensitivity (HBM) THERMAL RESISTANCE Rating θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. The θJA values in Table 3 assume a 4-layer JEDEC standard board with zero airflow. 5.5 V −3 V to 0 V −7 V to 0 V −2 V to 0 V 10 dBm 10 dBm 175°C −65°C to +150°C −40°C to +85°C 260°C 250 V (Class 1A) Table 3. Thermal Resistance Package Type 32-Lead LFCSP ESD CAUTION Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. 0 | Page 4 of 24 θJA 31.66 θJC 24.3 Unit °C/W Data Sheet HMC7911 VDRF1 VESD VGRF IF1 NIC NIC IF2 NIC PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 32 31 30 29 28 27 26 25 VGMIX 1 24 NIC NIC 2 23 NIC 22 VDRF2 NIC 3 NIC 4 HMC7911 21 VCTL1 NIC 5 TOP VIEW (Not to Scale) 20 VCTL2 GND 6 19 VDRF3 14 15 16 EPAD NOTES 1. NIC = NOT INTERNALLY CONNECTED. NO CONNECTION IS REQUIRED. THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, ALL DATA SHOWN HEREIN WERE MEASURED WITH THESE PINS CONNECTED EXTERNALLY TO RF/DC GROUND. 2. EXPOSED PAD. CONNECT TO A LOW IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE. 13730-002 13 NIC 12 VDET 11 VREF 10 VDLO2 VDLO1 9 GND 17 NIC RFOUT 18 VDRF4 GND 8 GND LOIN 7 Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. 1 Mnemonic VGMIX 2, 3, 4, 5, 16, 17, 23, 24, 29, 31, 32 6, 8, 13, 15 7 9, 10 NIC GND LOIN VDLO1, VDLO2 Ground Connect. See Figure 4. These pins and package bottom must be connected to RF/dc ground. Local Oscillator Input. See Figure 5. This pin is dc-coupled and matched to 50 Ω. Power Supply Voltage for LO Amplifier. See Figure 6. Refer to the typical application circuit for the required external components (see Figure 83). 11 VREF 12 VDET 14 18, 19, 22, 25 RFOUT VDRF4, VDRF3, VDRF2, VDRF1 Reference Voltage for the Power Detector. See Figure 7. VREF is the dc bias of the diode biased through the external resistor used for temperature compensation of VDET. Refer to the typical application circuit for the required external components (see Figure 83). Detector Voltage for the Power Detector. See Figure 8. VDET is the dc voltage representing the RF output power rectified by diode, which is biased through an external resistor. Refer to the typical application circuit for the required external components (see Figure 83). Radio Frequency Output. See Figure 9. This pin is dc-coupled and matched to 50 Ω. Power Supply Voltage for the Variable Gain Amplifier. See Figure 10. Refer to the typical application circuit for the required external components (see Figure 83). 20, 21 VCTL2, VCTL1 26 VGRF 27 VESD DC Voltage for ESD Protection. See Figure 13. Refer to the typical application circuit for the required external components (see Figure 83). 28, 30 IF1, IF2 Quadrature IF Inputs. See Figure 14. For applications not requiring operation to dc, use an off chip dc blocking capacitor. For operation to dc, these pins must not source/sink more than ±3 mA of current or device malfunction and failure may result. Exposed Pad. Connect to a low impedance thermal and electrical ground plane. EPAD Description Gate Voltage for FET Mixer. See Figure 3. Refer to the typical application circuit for the required external components (see Figure 83). Not Internally Connected. No connection is required. These pins are not connected internally. However, all data shown herein were measured with these pins connected externally to RF/dc ground. Gain Control Voltage for the Variable Gain Amplifier. See Figure 11. Refer to the typical application circuit for the required external components (see Figure 83). Gate Voltage for the Variable Gain Amplifier. See Figure 12. Refer to the typical application circuit for the required external components (see Figure 83). Rev. 0 | Page 5 of 24 HMC7911 Data Sheet INTERFACE SCHEMATICS 13730-003 VGMIX 13730-009 RFOUT Figure 3. VGMIX Interface Figure 9. RFOUT Interface VDRF1, VDRF2, VDRF3, VDRF4 13730-010 13730-004 GND Figure 4. GND Interface 13730-011 13730-005 LOIN Figure 10. VDRF1, VDRF2, VDRF3, VDRF4 Interface VCTL1, VCTL2, Figure 11. VCTL1, VCTL2 Interface Figure 5. LOIN Interface VGRF 13730-008 VESD Figure 7. VREF Interface IF1, IF2 13730-014 Figure 13. VESD Interface 13730-007 VDET 13730-013 Figure 12. VGRF Interface Figure 6. VDLO1, VDLO2 Interface VREF 13730-012 13730-006 VDLO1, VDLO2 Figure 14. IF1, IF2 Interface Figure 8. VDET Interface Rev. 0 | Page 6 of 24 Data Sheet HMC7911 TYPICAL PERFORMANCE CHARACTERISTICS 24 24 22 22 CONVERSION GAIN (dB) 20 18 16 TA = +85°C TA = +25°C TA = –40°C 14 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 24 20 = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V = –3.5V = –3.3V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 18. Conversion Gain vs. RF Frequency at Various LO Powers 25 = –3V = –2.8V = –2.5V = –2.3V = –2V = –1.8V = –1.5V = –1.3V = –1V 20 15 CONVERSION GAIN (dB) 44 40 36 32 28 10 5 0 RF = 18GHz RF = 19GHz RF = 20GHz –5 –10 18.4 18.6 18.8 19.0 19.2 19.4 19.6 19.8 20.0 –20 –5.0 13730-016 18.2 Figure 16. Conversion Gain vs. RF Frequency at Various Control Voltages, LO = 4 dBm 45 40 40 SIDEBAND REJECTION (dBc) 45 25 20 TA = +85°C TA = +25°C TA = –40°C 15 10 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 Figure 19. Conversion Gain vs. Control Voltage at Various RF Frequencies, LO = 4 dBm 50 30 –4.0 CONTROL VOLTAGE (V) 50 35 –4.5 13730-019 –15 RF FREQUENCY (GHz) 35 30 25 20 LO = 2dBm LO = 4dBm LO = 6dBm 15 10 5 17.5 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 13730-017 5 0 17.0 LO = 2dBm LO = 4dBm LO = 6dBm 14 10 17.0 Figure 15. Conversion Gain vs. RF Frequency at Various Temperatures, LO = 4 dBm CONVERSION GAIN (dB) 16 13730-018 17.5 13730-015 10 17.0 SIDEBAND REJECTION (dBc) 18 12 12 16 12 8 4 0 –4 –8 –12 –16 –20 18.0 20 Figure 17. Sideband Rejection vs. RF Frequency at Various Temperatures, LO = 4 dBm Rev. 0 | Page 7 of 24 0 17.0 17.5 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 13730-020 CONVERSION GAIN (dB) Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz. Figure 20. Sideband Rejection vs. RF Frequency at Various LO Powers HMC7911 Data Sheet Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz. 25 40 23 38 TA = +85°C TA = +25°C TA = –40°C 21 36 34 15 13 11 9 24 7 22 18.0 18.5 19.0 19.5 20.0 40 38 21 36 19 34 17 32 IP3 (dBm) 25 15 13 LO = 2dBm LO = 4dBm LO = 6dBm 9 20.0 30 LO = 2dBm LO = 4dBm LO = 6dBm 28 19.0 19.5 20.0 20 17.0 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 25. Output IP3 vs. RF Frequency at Various LO Powers 48 = –2.8V = –2.5V = –2.3V = –2V = –1.8V = –1.5V = –1.3V = –1V 44 40 36 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx = –2V = –1.8V = –1.5V = –1.3V = –1V 32 IP3 (dBm) VCTLx = –5V VCTLx = –4.8V VCTLx = –4.5V VCTLx = –4.3V VCTLx = –4V VCTLx = –3.8V VCTLx = –3.5V VCTLx = –3.3V VCTLx = –3V 17.5 13730-025 18.5 18.0 13730-022 17.5 Figure 22. Input IP3 vs. RF Frequency at Various LO Powers 22 19.5 24 RF FREQUENCY (GHz) 24 19.0 22 5 17.0 26 18.5 26 7 28 18.0 Figure 24. Output IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm 23 11 17.5 RF FREQUENCY (GHz) Figure 21. Input IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm 30 TA = +85°C TA = +25°C TA = –40°C 20 17.0 13730-021 17.5 RF FREQUENCY (GHz) 20 18 28 24 20 16 16 12 14 8 12 18.2 18.4 18.6 18.8 19.0 19.2 19.4 19.6 19.8 20.0 RF FREQUENCY (GHz) 13730-023 10 18.0 4 Figure 23. Input IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm 0 18.0 18.2 18.4 18.6 18.8 19.0 19.2 19.4 19.6 19.8 20.0 RF FREQUENCY (GHz) Figure 26. Output IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm Rev. 0 | Page 8 of 24 13730-026 IP3 (dBm) 28 26 5 17.0 IP3 (dBm) 32 30 13730-024 17 IP3 (dBm) IP3 (dBm) 19 Data Sheet HMC7911 Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz. 24 40 22 35 30 20 IP3 (dBm) IP3 (dBm) 25 18 16 20 15 RF = 18GHz RF = 19GHz RF = 20GHz 14 12 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 CONTROL VOLTAGE (V) 0 –5.0 Figure 27. Input IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm –2.5 –2.0 –1.5 –1.0 24 22 4 20 P1dB (dBm) 6 0 18 16 –2 14 –4 12 17.5 18.0 18.5 19.0 19.5 20.0 10 17.0 TA = +85°C TA = +25°C TA = –40°C 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 28. Input P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm 13730-031 2 13730-028 Figure 31. Output P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm 25 25 TA = +85°C TA = +25°C TA = –40°C 23 21 23 21 NOISE FIGURE (dB) 19 17 15 13 11 19 17 15 13 11 9 9 7 7 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 5 1.0 13730-029 17.5 TA = +85°C TA = +25°C TA = –40°C 1.5 2.0 2.5 3.0 3.5 IF FREQUENCY (GHz) Figure 29. Noise Figure vs. RF Frequency at Various Temperatures, LO = 6 dBm Figure 32. Noise Figure vs. IF Frequency at Various Temperatures, LO = 6 dBm, LO Frequency = 21 GHz Rev. 0 | Page 9 of 24 13730-032 P1dB (dBm) –3.0 26 RF FREQUENCY (GHz) NOISE FIGURE (dB) –3.5 Figure 30. Output IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm TA = +85°C TA = +25°C TA = –40°C 8 5 17.0 –4.0 CONTROL VOLTAGE (V) 10 –6 17.0 –4.5 13730-030 5 13730-027 10 –5.0 RF = 18GHz RF = 19GHz RF = 20GHz 10 HMC7911 Data Sheet 24 24 22 22 CONVERSION GAIN (dB) 20 18 16 TA = +85°C TA = +25°C TA = –40°C 14 12 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 28 CONVERSION GAIN (dB) 24 20 LO = 2dBm LO = 4dBm LO = 6dBm 14 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 36. Conversion Gain vs. RF Frequency at Various LO Powers 25 = –2V = –1.8V = –1.5V = –1.3V = –1V 20 15 CONVERSION GAIN (dB) 32 16 10 17.0 Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures, LO = 4 dBm 36 18 12 13730-033 10 17.0 20 13730-036 CONVERSION GAIN (dB) Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz. 16 12 8 4 0 –4 10 5 0 RF = 17GHz RF = 18GHz RF = 19GHz –5 –10 –8 –12 –15 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 34. Conversion Gain vs. RF Frequency at Various Control Voltages, LO = 4 dBm 50 45 45 40 40 30 25 20 15 TA = +85°C TA = +25°C TA = –40°C 10 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 –3.0 –2.5 –2.0 –1.5 –1.0 35 30 25 20 LO = 2dBm LO = 4dBm LO = 6dBm 15 10 0 17.0 13730-035 17.5 –3.5 5 5 0 17.0 –4.0 Figure 37. Conversion Gain vs. Control Voltage at Various RF Frequencies, LO = 4 dBm, 50 35 –4.5 CONTROL VOLTAGE (V) SIDEBAND REJECTION (dBc) SIDEBAND REJECTION (dBc) –20 –5.0 Figure 35. Sideband Rejection vs. RF Frequency at Various Temperatures, LO = 4 dBm 17.5 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 13730-038 17.5 13730-034 –20 17.0 13730-037 –16 Figure 38. Sideband Rejection vs. RF Frequency at Various LO Powers Rev. 0 | Page 10 of 24 Data Sheet HMC7911 Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz. 25 40 23 38 TA = +85°C TA = +25°C TA = –40°C 36 34 17 32 15 13 26 9 24 7 22 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 20 17.0 40 38 21 36 19 34 17 32 IP3 (dBm) 25 15 13 28 26 19.5 20.0 LO = 2dBm LO = 4dBm LO = 6dBm 18.5 19.0 19.5 20.0 20 17.0 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 13730-043 18.0 13730-040 17.5 Figure 40. Input IP3 vs. RF Frequency at Various LO Powers 30 19.0 22 RF FREQUENCY (GHz) 32 18.5 28 24 7 5 17.0 18.0 30 26 LO = 2dBm LO = 4dBm LO = 6dBm 9 17.5 Figure 42. Output IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm 23 11 TA = +85°C TA = +25°C TA = –40°C RF FREQUENCY (GHz) Figure 39. Input IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm Figure 43. Output IP3 vs. RF Frequency at Various LO Powers 52 = –2V = –1.8V = –1.5V = –1.3V = –1V 48 44 40 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx = –2V = –1.8V = –1.5V = –1.3V = –1V 36 IP3 (dBm) 24 22 20 18 32 28 24 20 16 16 12 14 8 12 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 13730-041 10 17.0 4 Figure 41. Input IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm 0 17.0 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 44. Output IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm Rev. 0 | Page 11 of 24 13730-044 IP3 (dBm) 28 11 5 17.0 IP3 (dBm) 30 13730-042 IP3 (dBm) 19 13730-039 IP3 (dBm) 21 HMC7911 Data Sheet Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz. 30 40 28 35 RF = 17GHz RF = 18GHz RF = 19GHz 26 30 25 22 IP3 (dBm) 20 18 20 15 RF = 17GHz RF = 18GHz RF = 19GHz 16 10 14 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 CONTROL VOLTAGE (V) 0 –5.0 13730-045 10 –5.0 Figure 45. Input IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm –2.5 –2.0 –1.5 –1.0 24 22 4 20 P1dB (dBm) 6 2 0 18 16 –2 14 –4 12 17.5 18.0 18.5 19.0 19.5 20.0 10 17.0 13730-046 P1dB (dBm) –3.0 26 RF FREQUENCY (GHz) Figure 46. Input P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm 21 19 17 15 13 11 9 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 13730-047 7 17.5 17.5 18.0 18.5 19.0 19.5 20.0 Figure 49. Output P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm TA = +85°C TA = +25°C TA = –40°C 23 TA = +85°C TA = +25°C TA = –40°C RF FREQUENCY (GHz) 25 NOISE FIGURE (dB) –3.5 Figure 48. Output IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm TA = +85°C TA = +25°C TA = –40°C 8 5 17.0 –4.0 CONTROL VOLTAGE (V) 10 –6 17.0 –4.5 13730-048 5 12 Figure 47. Noise Figure vs. RF Frequency at Various Temperatures, LO = 6 dBm Rev. 0 | Page 12 of 24 13730-049 IP3 (dBm) 24 Data Sheet HMC7911 24 22 22 CONVERSION GAIN (dB) 24 20 18 16 14 TA = +85°C TA = +25°C TA = –40°C 10 17.0 17.5 18.5 18.0 19.0 19.5 20.0 24 CONVERSION GAIN (dB) 20 16 14 = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 53. Conversion Gain vs. RF Frequency at Various LO Powers 20 = –2V = –1.8V = –1.5V = –1.3V = –1V 15 CONVERSION GAIN (dB) VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 18 10 17.0 Figure 50. Conversion Gain vs. RF Frequency at Various Temperatures, LO = 4 dBm 28 20 12 RF FREQUENCY (GHz) 32 LO = 2dBm LO = 4dBm LO = 6dBm 13730-053 12 13730-050 CONVERSION GAIN (dB) Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz. 16 12 8 4 0 –4 –8 –12 10 5 0 –5 RF = 17GHz RF = 18GHz RF = 19GHz –10 –15 17.4 17.6 17.8 18.0 18.2 18.4 18.6 18.8 19.0 RF FREQUENCY (GHz) Figure 51. Conversion Gain vs. RF Frequency at Various Control Voltages, LO = 4 dBm 50 45 45 40 40 30 25 20 TA = +85°C TA = +25°C TA = –40°C 15 10 5 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 35 30 25 20 LO = 2dBm LO = 4dBm LO = 6dBm 15 10 5 17.5 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 0 17.0 13730-052 0 17.0 –4.0 Figure 54. Conversion Gain vs. Control Voltage at Various RF Frequencies, LO = 4 dBm 50 35 –4.5 CONTROL VOLTAGE (V) SIDEBAND REJECTION (dBc) SIDEBAND REJECTION (dBc) –20 –5.0 Figure 52. Sideband Rejection vs. RF Frequency at Various Temperatures, LO = 4 dBm 17.5 18.0 18.5 19.0 RF FREQUENCY (GHz) 19.5 20.0 13730-055 17.2 13730-051 –20 17.0 13730-054 –16 Figure 55. Sideband Rejection vs. RF Frequency at Various LO Powers Rev. 0 | Page 13 of 24 HMC7911 Data Sheet Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz. 25 40 23 38 TA = +85°C TA = +25°C TA = –40°C 21 36 34 15 13 11 9 24 7 22 18.0 18.5 19.0 19.5 20.0 25 40 38 13 30 28 26 9 24 7 22 19.0 19.5 20.0 RF FREQUENCY (GHz) 28 26 = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx 17.5 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) Figure 57. Input IP3 vs. RF Frequency at Various LO Powers VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx LO = 2dBm LO = 4dBm LO = 6dBm 20 17.0 13730-057 18.5 18.0 = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V 20.0 32 11 VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 19.5 13730-060 IP3 (dBm) 15 30 19.0 34 17 17.5 18.5 36 LO = 2dBm LO = 4dBm LO = 6dBm 5 17.0 18.0 Figure 59. Output IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm 23 19 17.5 RF FREQUENCY (GHz) Figure 56. Input IP3 vs. RF Frequency at Various Temperatures, LO = 4 dBm 21 TA = +85°C TA = +25°C TA = –40°C 20 17.0 13730-056 17.5 RF FREQUENCY (GHz) Figure 60. Output IP3 vs. RF Frequency at Various LO Powers 52 = –2V = –1.8V = –1.5V = –1.3V = –1V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx 48 44 40 36 22 32 IP3 (dBm) 24 20 18 = –5V = –4.8V = –4.5V = –4.3V = –4V = –3.8V VCTLx VCTLx VCTLx VCTLx VCTLx VCTLx = –3.5V = –3.3V = –3V = –2.8V = –2.5V = –2.3V VCTLx VCTLx VCTLx VCTLx VCTLx = –2V = –1.8V = –1.5V = –1.3V = –1V 18.0 18.2 18.6 18.8 28 24 20 16 16 12 14 8 12 4 17.2 17.4 17.6 17.8 18.0 18.2 18.4 18.6 18.8 19.0 RF FREQUENCY (GHz) 13730-058 10 17.0 Figure 58. Input IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm 0 17.0 17.2 17.4 17.6 17.8 18.4 19.0 RF FREQUENCY (GHz) Figure 61. Output IP3 vs. RF Frequency at Various Control Voltages, LO = 4 dBm Rev. 0 | Page 14 of 24 13730-061 IP3 (dBm) 28 26 5 17.0 IP3 (dBm) 32 30 13730-059 17 IP3 (dBm) IP3 (dBm) 19 Data Sheet HMC7911 Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz. 30 40 28 35 RF = 17GHz RF = 18GHz RF = 19GHz 26 30 25 22 IP3 (dBm) 20 18 20 15 RF = 17GHz RF = 18GHz RF = 19GHz 16 10 14 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 CONTROL VOLTAGE (V) Figure 62. Input IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm 26 8 24 6 22 4 20 2 –2.0 –1.5 –1.0 12 18.0 18.5 19.0 19.5 20.0 10 17.0 13730-063 17.5 Figure 63. Input P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm 21 19 17 15 13 11 9 18.0 18.5 19.0 19.5 20.0 RF FREQUENCY (GHz) 13730-064 7 17.5 18.0 18.5 19.0 19.5 20.0 Figure 66. Output P1dB vs. RF Frequency at Various Temperatures, LO = 4 dBm TA = +85°C TA = +25°C TA = –40°C 23 17.5 RF FREQUENCY (GHz) 25 NOISE FIGURE (dB) –2.5 TA = +85°C TA = +25°C TA = –40°C 14 RF FREQUENCY (GHz) 5 17.0 –3.0 16 –4 –6 17.0 –3.5 18 TA = +85°C TA = +25°C TA = –40°C –2 –4.0 Figure 65. Output IP3 vs. Control Voltage at Various RF Frequencies, LO = 4 dBm 10 0 –4.5 CONTROL VOLTAGE (V) P1dB (dBm) P1dB (dBm) 0 –5.0 13730-062 10 –5.0 13730-065 5 12 Figure 64. Noise Figure vs. RF Frequency at Various Temperatures, LO = 6 dBm Rev. 0 | Page 15 of 24 13730-066 IP3 (dBm) 24 HMC7911 Data Sheet 20 –10 15 –15 10 –20 LEAKAGE (dBm) 5 0 –5 TA = +85°C TA = +25°C TA = –40°C –10 –25 –30 –35 TA = +85°C TA = +25°C TA = –40°C –40 –45 18 19 20 21 22 23 24 LO FREQUENCY (GHz) –50 17 13730-067 –20 17 18 21 22 23 24 Figure 70. 2× LO Leakage at IF1 vs. LO Frequency at Various Temperatures, LO = 4 dBm –10 –10 –15 –15 TA = +85°C TA = +25°C TA = –40°C –20 –20 LEAKAGE (dBm) –25 LEAKAGE (dBm) 20 LO FREQUENCY (GHz) Figure 67. 2× LO Leakage at RFOUT vs. LO Frequency at Various Temperatures, LO = 4 dBm –25 –30 –35 TA = +85°C TA = +25°C TA = –40°C –40 –30 –35 –40 –45 –50 –45 18 19 20 21 22 23 24 LO FREQUENCY (GHz) 13730-068 –55 –50 17 Figure 68. 2× LO Leakage at IF2 vs. LO Frequency at Various Temperatures, LO = 4 dBm –15 –20 –25 –30 –35 –40 TA = +85°C TA = +25°C TA = –40°C –45 –50 –60 0.5 1.0 1.5 2.0 2.5 3.0 IF FREQUENCY (GHz) 3.5 13730-069 –55 0 –60 0 0.5 1.0 1.5 2.0 2.5 3.0 IF FREQUENCY (GHz) Figure 71. IF1 Leakage at RFOUT vs. IF Frequency at Various Temperatures –10 LEAKAGE (dBm) 19 13730-070 –15 Figure 69. IF2 Leakage at RFOUT vs. IF Frequency at Various Temperatures Rev. 0 | Page 16 of 24 3.5 13730-071 LEAKAGE (dBm) LEAKAGE PERFORMANCE Data Sheet HMC7911 RETURN LOSS PERFORMANCE 0 0 –15 –20 –10 –15 –25 18.0 18.5 19.0 19.5 –30 8.0 13730-072 17.5 20.0 RF FREQUENCY (GHz) Figure 72. RF Return Loss vs. RF Frequency at Various Temperatures, LO = 4 dBm at LO Frequency = 21 GHz 10.0 10.5 11.0 11.5 12.0 Figure 74. LO Return Loss vs. LO Frequency at Various Temperatures, LO = 4 dBm TA = +85°C TA = +25°C TA = –40°C –5 RETURN LOSS (dB) –15 –20 –15 –20 –25 –30 –30 1.0 1.5 2.0 2.5 3.0 3.5 IF FREQUENCY (GHz) Figure 73. IF1 Return Loss vs. IF Frequency at Various Temperatures, LO = 4 dBm at LO Frequency = 21 GHz TA = +85°C TA = +25°C TA = –40°C –10 –25 13730-073 RETURN LOSS (dB) 9.5 0 –10 –35 0.5 9.0 LO FREQUENCY (GHz) 0 –5 8.5 13730-074 –25 –30 17.0 TA = +85°C TA = +25°C TA = –40°C –20 –35 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IF FREQUENCY (GHz) Figure 75. IF2 Return Loss vs. IF Frequency at Various Temperatures, LO = 4 dBm at LO Frequency = 21 GHz Rev. 0 | Page 17 of 24 13730-075 –10 –5 TA = +85°C TA = +25°C TA = –40°C RETURN LOSS (dB) RETURN LOSS (dB) –5 HMC7911 Data Sheet POWER DETECTOR PERFORMANCE 1k 100 10 –16 –14 –12 –10 –8 TA = +85°C TA = +25°C TA = –40°C –6 –4 2 0 2 4 6 8 10 OUTPUT POWER (dBm) Figure 76. Detector Output Voltage (VREF – VDET) vs. Output Power at Various Temperatures, LO = 20.5 GHz 1 –16 –14 –12 –10 –8 –4 2 0 2 4 6 8 10 Figure 79. Detector Sensitivity vs. Output Power at Various Temperatures, LO = 20.5 GHz 100 TA = +85°C TA = +25°C TA = –40°C –6 –4 2 0 2 4 6 8 10 OUTPUT POWER (dBm) Figure 77. Detector Output Voltage (VREF – VDET) vs. Output Power at Various Temperatures, LO = 22 GHz 10 1 –16 –14 –12 –10 –8 TA = +85°C TA = +25°C TA = –40°C –6 –4 2 0 2 4 6 8 10 OUTPUT POWER (dBm) 13730-080 SENSITIVITY (mV/dB) 1k 13730-077 Figure 80. Detector Sensitivity vs. Output Power at Various Temperatures, LO = 22 GHz 100 SENSITIVITY (mV/dB) 10k 1k 100 TA = +85°C TA = +25°C TA = –40°C 2 0 2 4 OUTPUT POWER (dBm) 6 8 10 1 –16 –14 –12 –10 –8 13730-078 –4 Figure 78. Detector Output Voltage (VREF – VDET) vs. Output Power at Various Temperatures, LO = 23.5 GHz 10 TA = +85°C TA = +25°C TA = –40°C –6 –4 2 0 2 OUTPUT POWER (dBm) 4 6 8 10 13730-081 OUTPUT VOLTAGE (mV) –6 100 10 –16 –14 –12 –10 –8 OUTPUT VOLTAGE (mV) TA = +85°C TA = +25°C TA = –40°C OUTPUT POWER (dBm) 10k 10 –6 10 13730-079 SENSITIVITY (mV/dB) 100 13730-076 OUTPUT VOLTAGE (mV) 10k Figure 81. Detector Sensitivity vs. Output Power at Various Temperatures, LO = 23.5 GHz Rev. 0 | Page 18 of 24 Data Sheet HMC7911 SPURIOUS PERFORMANCE M × N Spurious Output, RF = 19 GHz TA = 25°C, IF = 1 GHz, VDLOx = 5 V, VDRFx = 5 V, VCTLx = −5 V, VESD = −5 V, VGMIX = −0.5 V. IF = 1 GHz at IF input power = −6 dBm, LO frequency = 20 GHz at LO input = 4 dBm. Mixer spurious products are measured in dBc from the RF output power level. Spur values are (M × IF) − (N × LO). N/A means not applicable. M × N Spurious Outputs, RF = 17 GHz IF = 1 GHz at IF input power = −6 dBm, LO frequency = 18 GHz at LO input power = 4 dBm. M × IF 0 1 2 3 4 5 0 N/A 52 72 91 98 108 1 6 0 50 69 80 93 N × LO 2 3 58 N/A 45 N/A 42 N/A 71 N/A 79 N/A 87 N/A 4 N/A N/A N/A N/A N/A N/A 5 N/A N/A N/A N/A N/A N/A IF = 2 GHz at IF input power = −6 dBm, LO frequency = 19 GHz at LO input power = 4 dBm. M × IF 0 1 2 3 4 5 0 N/A 53 66 74 99 117 1 7 0 48 78 88 102 N × LO 2 3 66 N/A 48 N/A 41 N/A 69 N/A 82 N/A 91 N/A 4 N/A N/A N/A N/A N/A N/A 5 N/A N/A N/A N/A N/A N/A IF = 3 GHz at IF input power = −6 dBm, LO frequency = 20 GHz at LO input = 4 dBm. M × IF 0 1 2 3 4 5 0 N/A 50 59 82 101 98 1 4.8 0 45 77 95 103 N × LO 2 3 54 N/A 48 N/A 44 N/A 66 N/A 77 N/A 94 N/A 4 N/A N/A N/A N/A N/A N/A M × IF 0 1 2 3 4 5 0 N/A 52 79 90 98 115 1 6 0 43 64 77 93 N × LO 2 56 50 52 69 79 85 3 N/A N/A N/A N/A N/A N/A 4 N/A N/A N/A N/A N/A N/A 5 N/A N/A N/A N/A N/A N/A IF = 2 GHz at IF input power = −6 dBm, LO frequency = 21 GHz at LO input power = 4 dBm. M × IF 0 1 2 3 4 5 0 N/A 50 69 78 99 106 1 4 0 45 68 79 90 N × LO 2 60 46 52 71 77 83 3 N/A N/A N/A N/A N/A N/A 4 N/A N/A N/A N/A N/A N/A 5 N/A N/A N/A N/A N/A N/A IF = 3 GHz at IF input power = −6 dBm, LO frequency = 22 GHz at LO input power = 4 dBm. M × IF 5 N/A N/A N/A N/A N/A N/A Rev. 0 | Page 19 of 24 0 1 2 3 4 5 0 N/A 51 66.3 92 104 95 1 3 0 39 73 86 103 N × LO 2 3 71 N/A 47 N/A 53 N/A 71 N/A 81 N/A 88 N/A 4 N/A N/A N/A N/A N/A N/A 5 N/A N/A N/A N/A N/A N/A HMC7911 Data Sheet THEORY OF OPERATION through an on-chip Wilkinson power combiner and relatively matched to provide a single-ended 50 Ω output signal that is amplified by the RF amplifiers to produce a dc-coupled and 50 Ω matched RF output signal at the RFOUT port. A voltage attenuator precedes the RF amplifiers for desired gain control. The HMC7911 is a GaAs, pHEMT, MMIC I/Q upconverter with an integrated LO buffer that upconverts intermediate frequencies between dc to 3.5 GHz to RF between 17 GHz and 20 GHz. LO buffer amplifiers are included on chip to allow a minimum LO drive level of 4 dBm for full performance. The LO path feeds a quadrature splitter followed by on-chip baluns that drive the I and Q singly balanced cores of the passive mixers. The RF output of the I and Q mixers are then summed ESD VDLO1 ESD ESD VDLO2 I ESD VDRF1 ESD VDRF2 ESD VDRF3 ESD VDRF4 2× VGMIX RFOUT VREF Q VCTL1 ESD ESD VDET VGRF VCTL2 ESD ESD Figure 82. Upconverter Circuit Architecture Rev. 0 | Page 20 of 24 ESD ESD 13730-082 LOIN The power detector feature provides a LO cancellation capability to the level of −10 dBm. See Figure 82 for a functional block diagram of the upconverter circuit architecture. Data Sheet HMC7911 APPLICATIONS INFORMATION A typical lower sideband upconversion circuit is shown in Figure 83. The lower sideband input signal is connected to the input port of the 90° hybrid coupler. The isolated port is loaded to 50 Ω. The external 90° hybrid splits the IF signal into I and Q phase terms. The I and Q input signals enter the HMC7911 on the IF1 and IF2 inputs. IF1 of the device is connected to the 90° port of the hybrid coupler. IF2 is connected to the 0° port of the hybrid coupler. The LO to RF leakage can be improved by applying small dc offsets to the I/Q mixer cores via the VDC_IF1 and VDC_IF2 inputs. However, it is important to limit the applied dc bias to avoid sourcing or sinking more than ±3 mA of bias current. Depending on the bias sources used, it may be prudent to add series resistance to ensure that the applied bias current does not exceed ±3 mA. BIASING SEQUENCE LOCAL OSCILLATOR NULLING Broad LO nulling may be required to achieve optimum IP3 and LO to RF isolation performance. This nulling is achieved by applying dc voltages between −0.2 V and +0.2 V to the I and Q ports to suppress the LO signal across the RF frequency band by approximately 5 dBc to 10 dBc. To suppress the LO signal at the RF port, use the following nulling sequence: 1. 2. 3. The HMC7911 uses buffer amplifiers in the LO and RF paths. These active stages all use depletion mode pHEMTs. To ensure transistor damage does not occur, use the following power-up bias sequence: 1. 2. 3. 4. 5. 6. 7. Apply a −5 V bias to Pin 27 (VESD). Apply a −2 V bias to Pin 26 (VGRF), which is a pinched off state. Apply a −0.5 V bias to Pin 1 (VGMIX). This bias can be adjusted from 0.5 V to −1 V depending on the LO power used to provide the optimum IP3 response of the mixer. Apply 5 V to Pin 9 (VDLO1) and Pin 10 (VDLO2). Apply −5 V to Pin 20 (VCTL2) and Pin 21 (VCTL1). Adjust VCTL1 and VCTL2 between −5 V and 0 V depending on the amount of attenuation desired. Apply 5 V to Pin 18, Pin 19, Pin 22, and Pin 25 (VDRF4, VDRF3, VDRF2, and VDRF1). Adjust Pin 26 (VGRF) between −2 V and 0 V to achieve a total amplifier quiescent drain current of 220 mA. Rev. 0 | Page 21 of 24 Adjust VDC_IF1 between −0.2 V and +0.2 V and monitor the LO leakage on the RF port. When the desired or maximum level of suppression is achieved, proceed to Step 2. Adjust VDC_IF2 between −0.2 V and +0.2 V and monitor the LO leakage on the RF port until either the desired or the maximum level of suppression is achieved. If the desired level of the LO signal on the RF port has still not been achieved, further tune each VDC_IF1 and VDC_IF2 independently to achieve the desired LO leakage. The resolution of the voltage changed on the voltage of the VDC_IF1 and VDC_IF2 inputs must be in the millivolt range. HMC7911 Data Sheet IF1 50Ω IF2 IFIN HYBRID COUPLER VDC_IF2 100nF 100pF 100pF 33nH 100pF VDC_IF1 33nH 100pF 100nF VESD 100pF 100nF 4.7µF + VGRF 100pF 100nF 4.7µF + 100pF 100nF 4.7µF 100pF 100nF 4.7µF 100pF 100nF 4.7µF 100pF 100nF 4.7µF 100pF 100nF 4.7µF 100pF 100nF 4.7µF + VDRF1 32 31 30 29 28 27 26 25 VGMIX 4.7µF 100nF 100pF + 1 24 2 23 3 22 4 LOIN 20 6 19 7 18 8 17 VDRF2 VCTL1 21 HMC7911 5 + + VCTL2 + 9 10 11 12 13 14 15 16 GND 4.7µF VDLO2 4.7µF + + 100nF 100pF 100nF 100pF VREF + VDRF3 VDRF4 RFOUT VDET VDET VREF VREF VDET 100nF 100pF 10kΩ 10kΩ 33kΩ VD_5V +5V 100kΩ 100kΩ 33kΩ 10kΩ –5V 10kΩ VOUT = VREF – VDET +5V ALTERNATE SUGGESTED CIRCUIT Figure 83. Typical Application Circuit Rev. 0 | Page 22 of 24 13730-083 VDLO1 + Data Sheet HMC7911 EVALUATION PRINTED CIRCUIT BOARD Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 84 is available from Analog Devices, Inc., upon request. The circuit board used in this application must use RF circuit design techniques. Signal lines must have 50 Ω impedance and the package ground leads and exposed pad must be connected directly to the ground plane similar to that shown in Figure 84. J3 I L1 C62 C4 C 6 48 C29 C28 C1 + C6 + + VDOUT C78 + C50 C51 C9 R1 C26 VDD3+ VDD4 C25 R2 C65 J7 C57 C27 RFOUT J4 600-01346-00-2 13730-084 GND C77 VD_5V C5 6 + + VDREF C3 1 VDLO2 C32 + + C5 J8 C4 C2 VDLO1 GND LOIN + GND J1 C61 C49 VDLNA VDD2 C47 C45 C18 C44 C17 C15 C16 C13 C10 C11 VCTL1 C7 C8VCTL2 C12 GND VGRF C30 U1 C3 -5ESD + GND C64 J5 C75 J6 VI + VQ VADJUST + C71 C72 Q C70 C69 L2 C76 + C74 C73 J2 Figure 84. Evaluation Board Top Layer Rev. 0 | Page 23 of 24 HMC7911 Data Sheet OUTLINE DIMENSIONS 0.30 0.25 0.18 1 24 0.50 BSC 3.80 3.70 SQ 3.60 EXPOSED PAD 17 0.45 0.40 0.35 TOP VIEW 1.00 0.90 0.80 PKG-004898 8 16 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF SEATING PLANE PIN 1 INDICATOR 32 25 9 BOTTOM VIEW 3.50 REF 0.20 MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-4. 10-06-2015-B PIN 1 INDICATOR 5.10 5.00 SQ 4.90 Figure 85. 32-Lead Lead Frame Chip Scale Package [LFCSP] 5 mm × 5 mm Body and 0.90 mm Package Height (HCP-32-3) Dimensions shown in millimeters ORDERING GUIDE Model1 HMC7911LP5E HMC7911LP5ETR EV1HMC7911LP5 1 2 Temperature Range −40°C to +85°C −40°C to +85°C MSL Rating2 MSL3 MSL3 Package Description 32-Lead Lead Frame Chip Scale Package [LFCSP] 32-Lead Lead Frame Chip Scale Package [LFCSP] Evaluation Assembly Board HMC7911LP5E and HMC7911LP5ETR are RoHS Compliant Parts. The peak reflow temperature is 260°C. See the Absolute Maximum Ratings section, Table 2. ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13730-0-4/16(0) Rev. 0 | Page 24 of 24 Package Option HCP-32-3 HCP-32-3