Transcript
http://www.fujielectric.com/products/semiconductor/
1MBI100U4F-120L-50
IGBT Modules
IGBT MODULE (U series) 1200V / 100A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage
Collector current
Symbols VCES VGES
Conditions
Ic
Continuous
Ic pulse
1ms
-Ic -Ic pulse Collector power dissipation Pc Reverse voltage for FWD VR IF Forword current for FWD IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3)
1ms 1 device Continuous 1ms
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
Maximum ratings 1200 ±20 150 100 300 200 50 100 540 1200 150 300 +150 -40~+125 2500
Units V V
3.5
Nm
A
W V A °C °C VAC
1MBI100U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items
Symbols
Conditions
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
ICES IGES VGE (th) VCE (sat) (terminal)
VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 100mA
Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time
Forward on voltage Reverse Current Forward on voltage Reverse recovery time Lead resistance, terminal-chip(*4)
VCE (sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) IR VF (terminal) VF (chip) trr R lead
Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz
VGE = 15V IC = 100A VGE
VCC = 600V, IC = 100A VGE = ±15V, RG = 5.6Ω
VGE = 0V IF = 50A
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
VCE = 1200V VGE = 0V IF = 150A
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
IF = 150A
Characteristics min. typ. max. 1.0 200 4.5 6.5 8.5 2.05 2.20 2.25 1.90 2.05 2.10 11 0.32 1.20 0.10 0.60 0.03 0.41 1.00 0.07 0.30 1.70 2.00 1.80 1.60 1.85 1.70 1.0 1.85 2.00 2.00 1.60 1.75 1.75 0.35 1.39 -
Units mA nA V V nF
µs
V mA V µs mΩ
Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance
Rth(c-f)
Conditions IGBT Inverse Diode FWD with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.23 0.73 0.28 0.05 -
Units
°C/W
1MBI100U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip 250
VGE=20V 15V
200
12V
Collector current : Ic [A ]
Collector current : Ic [ A ]
250
150 10V
100
VGE=20V
200
15V
12V
150 10V
100
50
50 8V
8V 0
0 0
1 2 3 4 Collector-Emitter voltage : VCE [ V ]
5
0
VGE=15V / chip
250 Tj=25oC
200
Collector-Emitter voltage : VCE [ V ]
10 Tj=125oC
150
100
50
0 0
1 2 3 4 Collector-Emitter voltage : VCE [ V ]
8
6
4 Ic=200A Ic=100A Ic=50A
2
0
5
5
10 15 20 Gate-Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ]
100.0
Cies
10.0
Cres
1.0
Coes
0.1 0
10 20 Collector-Emitter voltage : VCE [ V ]
25
Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj=25oC
VGE=0V, f=1MHz, Tj=25°C
Capacitance : Cies, Coes, Cres [ nF ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector current : Ic [ A ]
1 2 3 4 Collector-Emitter voltage : VCE [ V ]
VGE VCE
0 0
30
3
200 400 Gate charge : Qg [ nC ]
600
1MBI100U4F-120L-50
IGBT Modules
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=25oC
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=125oC 10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff ton
tr
100
tf
10 0
50 100 150 Collector current : Ic [ A ]
1000
ton toff tr
100
tf
10
200
0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
ton toff tr
100 tf
10 1
10 100 Gate resistance : RG [ Ω ]
1000
20 Eon(125oC) 15
Eoff(125oC) Eon(25oC) Err(125oC)
10
Eoff(25oC) Err(25oC)
5
0 0
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj=125oC
50
100 150 Collector current : Ic [ A ]
200
Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 5.6Ω,Tj <= 125oC
40
300
Eon
30
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
200
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj=25oC
1000
50 100 150 Collector current : Ic [ A ]
20 Eoff 10
200
100
Err 0
0 1
10 100 Gate resistance : RG [ Ω ]
1000
0
4
400 800 1200 Collector-Emitter voltage : VCE [ V ]
1600
1MBI100U4F-120L-50
IGBT Modules
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FWD
FWD
Forward current vs. Forward on voltage (typ.) chip 1000 Tj=25oC
300
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
400
Forward current : IF [ A ]
Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω
Tj=125oC
200
100
0 0
1 2 3 Forward on voltage : VF [ V ]
trr(125oC) 100
Irr(25oC)
10
4
0
Inverse Diode Forward current vs. Forward on voltage (typ.) chip
50 100 150 Forward current : IF [ A ]
200
Transient thermal resistance (max.)
120 Tj=25oC
Thermal resistance : Rth (j-c) [ oC/W ]
1.00
100 Forward current : IF [ A ]
Irr(125oC) trr(25oC)
Tj=125oC
80 60 40 20 0 0
1 2 3 Forward on voltage : VF [ V ]
Inverse Diode FWD IGBT 0.10
0.01 0.001
4
5
0.010 0.100 Pulse width : Pw [ sec ]
1.000
1MBI100U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
94 80
E2 23
C1
E1 G1
23
34
G2 E2
4
C2E1
17
6.5
4
2-Ø
2.7max.
6
8 22.3
30
0.5
3-M5
Equivalent Circuit Schematic
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1MBI100U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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