Transcript
1Mx32 SRAM MODULE WS1M32-XH2X
FEATURES Access Times of 20, 25ns
Low Power CMOS
Packaging
Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
• 66 pin PGA Type, 1.385" sq., Hermetic Ceramic HIP (Package 402)* Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
Weight • WS1M32-XH2X - 13 grams (typical) This product is subject to change without notice.
Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs 5V Power Supply
PIN CONFIGURATION FOR WS1M32-XH2X
PIN DESCRIPTION I/O0-31 A0-19 WE#1-4 CS#1-4 OE# VCC GND NC
TOP VIEW
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
BLOCK DIAGRAM
A19
A19
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WS1M32-XH2X CAPACITANCE
ABSOLUTE MAXIMUM RATINGS Parameter
Symbol
Min
Max
(TA = +25°C)
Unit
TA
-55
+125
°C
Parameter
Symbol
Conditions
Max
Unit
TSTG
-65
+150
°C
OE#1-4 capacitance
COE
VIN = 0 V, f = 1.0 MHz
75
pF
Signal Voltage Relative to GND
VG
-0.5
VCC + 0.5
V
WE#1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
30
pF
Junction Temperature
TJ
150
°C
CS#1-2 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
30
pF
7.0
V
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
30
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
75
pF
Operating Temperature Storage Temperature
Supply Voltage
VCC
-0.5
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
TRUTH TABLE
Input High Voltage
VIH
2.2
VCC + 0.3
V
CS#1
CS#2
OE#
WE#
Mode
Data I/O
Power
Input Low Voltage
VIL
-0.3
+0.8
V
H
H
X
X
Standby
High Z
Standby
Operating Temp (Mil)
TA
-55
+125
°C
L
H
L
H
Read
Data Out
Active
Operating Temp (Ind.)
TA
-40
+85
°C
L
H
H
H
Out Disable
High Z
Active
L
H
X
L
Write
Data In
Active
H
L
L
H
Read
Data Out
Active
H
L
H
H
Out Disable
High Z
Active
H
L
X
L
Write
Data In
Active
L
L
X
X
Invalid State
Invalid State
Invalid State
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter
Symbol
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
-20
+20
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
-1
+10
μA
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
640
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
40
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
Operating Supply Current x 32 Mode
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
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WS1M32-XH2X AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter
Symbol
Read Cycle Read Cycle Time
tRC
Address Access Time
tAA
Output Hold from Address Change
tOH
Chip Select Access Time
tACS
-20 Min
-25 Max
20
Min
Max
25
ns
20 0
Units
25
ns
25
ns
0
ns
20
Output Enable to Output Valid
tOE
Chip Select to Output in Low Z
tCLZ1
2
8
8
Output Enable to Output in Low Z
tOLZ1
0
Chip Disable to Output in High Z
tCHZ1
8
8
ns
Output Disable to Output in High Z
tOHZ1
8
8
ns
2
ns ns
0
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter
Symbol
Write Cycle
-20 Min
-25 Max
Min
Max
Units
Write Cycle Time
tWC
20
25
ns
Chip Select to End of Write
tCW
12
12
ns
Address Valid to End of Write
tAW
10
10
ns
Data Valid to End of Write
tDW
10
10
ns
Write Pulse Width
tWP
12
12
ns
Address Setup Time
tAS
0
0
ns
Address Hold Time
tAH
0
0
ns
Output Active from End of Write
tOW1
3
4
Write Enable to Output in High Z
tWHZ1
Data Hold Time
ns
11
tDH
0
13 0
ns ns
1.This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC Test Conditions Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75Ω. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
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WS1M32-XH2X TIMING WAVEFORM – READ CYCLE
WRITE CYCLE – WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
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WS1M32-XH2X 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2)
35.2 (1.385) ± 0.38 (0.015) SQ
PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM
25.4 (1.0) TYP
5.7 (0.223) MAX 3.81 (0.150) ± 0.1 (0.005)
1.27 (0.050) ± 0.1 (0.005) 0.76 (0.030) ± 0.1 (0.005) 2.54 (0.100) TYP
15.24 (0.600) TYP
1.27 (0.050) TYP DIA 0.46 (0.018) ± 0.05 (0.002) DIA
25.4 (1.0) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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WS1M32-XH2X ORDERING INFORMATION
W S 1M32 - XX H2 X X MERCURY SYSTEMS SRAM Organization, two banks of 512Kx32 User configurable as 2Mx16 or 4Mx8 ACCESS TIME (ns) PACKAGE TYPE: H2 = Ceramic Hex-In-line Package, HIP (Package 402) DEVICE GRADE: M = Military Screened I = Industrial C = Commercial
-55°C to +125°C -40°C to +85°C 0°C to +70°C
LEAD FINISH: Blank = Gold plated leads A = Solder dip leads
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WS1M32-XH2X Document Title 1M x 32 SRAM Module
Revision History Rev #
History
Release Date
Status
Rev 8
Change (Pg. 2, 3)
March 2009
Final
April 2011
Final
August 2016
Final
8.1 Change standby current from 8 to 40mA 8.2 Change TOE from 5 to 8ns 8.3 Change TCW from 10 to 12ns 8.4 Change TWP from 10 to 12ns 8.5 Correct ordering info: Swap package type and device grade Rev 9
Change (Pg. 1-7) 9.1 Change document layout from White Electronic Designs to Microsemi
Rev 10
Changes (Pg. All) (ECN 10156) 10.1 Change document layout from Microsemi to Mercury Systems
Mercury Systems reserves the right to change products or specifications without notice. © 2016 Mercury Systems. All rights reserved.
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