Transcript
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
PM200DV1A120
FEATURE
a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package. • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage.
APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES
Dimensions in mm
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November. 2011
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM C1 VP1
VCC
CPI
IN
TjA TjK IGBT
OUT Fo
FPO
FWDi
AMP
SINK
NC
GND
SC C2E1
V PC
V N1
VCC
CNI
IN
TjA TjK IGBT
OUT FNO
FWDi
AMP
SINK
Fo
SC
NC GND V NC
E2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES IC ICRM Ptot IE IERM Tj
Parameter Collector-Emitter Voltage
Conditions
Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current)
VD=15V, VCIN=15V TC=25°C Pulse TC=25°C TC=25°C Pulse
Junction Temperature
Ratings 1200 200 400 1388 200 400 -20 ~ +150
Unit V
Ratings 20 20 20 20
Unit V V V mA
A W A °C
*: Tc measurement point is just under the chip.
CONTROL PART Symbol VD VCIN VFO IFO
Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current
Conditions Applied between : VP1-VPC, VN1-VNC Applied between : CPI-VPC, CNI-VNC Applied between : FPO-VPC, FNO-VNC Sink current at FPO, FNO terminals
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MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) TC Tstg Visol
Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Module case operating temperature Storage Temperature Isolation Voltage
Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start Applied between : C1-E2, Surge value
60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS
Ratings
Unit
800
V
1000
V
-20 ~ +100
°C
-40 ~ +125
°C
2500
V
*: TC measurement point is just under the chip.
THERMAL RESISTANCE Symbol
Parameter
Rth(j-c)Q Rth(j-c)D
Thermal Resistance
Rth(c-s)
Contact Thermal Resistance
Conditions Junction to case, IGBT (per 1 element) Junction to case, FWDi (per 1 element)
Case to heat sink, (per 1 module) Thermal grease applied
(Note.1) (Note.1) (Note.1)
Min. -
Limits Typ. -
Max. 0.09 0.146
-
0.018
-
Min. 0.3 -
Limits Typ. 1.65 1.85 2.3 0.8 0.3 0.4 2.4 0.4 -
Max. 2.15 2.35 3.3 2.0 0.8 1.0 3.3 1.2 1 10
Unit
K/W
Note.1: If you use this value, Rth(s-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC ton trr tc(on) toff tc(off) ICES
Parameter
Conditions
Collector-Emitter Saturation Voltage
VD=15V, IC=200A VCIN=0V, Pulsed
Emitter-Collector Voltage
IE=200A, VD=15V, VCIN= 15V
Switching Time
VD=15V, VCIN=0V← →15V VCC=600V, IC=200A Tj=125°C Inductive Load
Collector-Emitter Cut-off Current
(Fig. 1)
VCE=VCES, VD=15V , VCIN=15V (Fig. 5)
3
Tj=25°C Tj=125°C (Fig. 2)
(Fig. 3,4) Tj=25°C Tj=125°C
Unit V V
s
mA
November. 2011
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART Symbol
Parameter
Conditions
-20≤Tj≤125°C, VD=15V
(Fig. 3, 6)
Min. 1.2 1.7 300
VD=15V
(Fig. 3, 6)
-
VP1-VPC VN1-VNC
ID
Circuit Current
VD=15V, VCIN=15V
Vth(ON) Vth(OFF) SC
Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time
Applied between : CPI-VPC, CNI-VNC
toff(SC)
Limits Typ. 2 2 1.5 2.0 -
Max. 4 4 1.8 2.3 -
0.2
-
OT Trip level 135 Over Temperature Protection Detect Temperature of IGBT chip OT(hys) Hysteresis 20 UVt Trip level 11.5 12.0 12.5 Supply Circuit Under-Voltage -20≤Tj≤125°C Protection Reset level 12.5 UVr IFO(H) 0.01 (Note.2) Fault Output Current VD=15V, VFO=15V 10 15 IFO(L) tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
Unit mA V A s °C V mA ms
MECHANICAL RATINGS AND CHARACTERISTICS Symbol Ms Mt m
Parameter Mounting Torque
Conditions Mounting part Main terminal part
screw : M6 screw : M6
Weight
-
Min. 3.92 3.92 -
Limits Typ. 4.90 4.90 510
Max. 5.88 5.88 -
Unit N・m g
RECOMMENDED CONDITIONS FOR USE Symbol VCC
Parameter Supply Voltage
VD
Control Supply Voltage
VCIN(ON) VCIN(OFF) fPWM
Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time
tdead
Conditions Applied across C1-E2 terminals Applied between : VP1-VPC, VN1-VNC (Note.3) Applied between : CPI-VPC, CNI-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals
(Fig. 7)
Recommended value ≤ 800
Unit V
15.0±1.5
V
≤ 0.8 ≥ 4.0 ≤ 20
kHz
≥ 3.5
s
V
Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak
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MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) C1(C2)
NC
V *1
V *1
VD
F*O
V
F*O
VD
Ic
V*C
V*C
E1(E2)
E1(E2)
Fig. 1 VCEsat Test
C1
C1
V P1
FPO
FPO
VD1
CPI
CPI
VPC
VPC
Vcc
NC
E1C2
Vcc
NC
E1C2
V N1
VD2
Fig. 2 VEC Test
NC
V P1
VD1
IE-Ic
V
C*I
C *I
NC
C1(C2)
NC
V N1
FNO
FNO
V D2
C NI
CNI E2
VNC
E2
VNC Ic
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
C1(C2) NC
A
V *1
VD
F*O
pulse
VCE
C*I V*C E1(E2)
Fig. 5 ICES Test
Fig. 6 SC test waveform
Fig. 7 Dead time measurement point example 5
November. 2011
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
20k
≥10µ
C1
VP1 Vcc OUT
FPO VD1
IF
Fo
CPI
+ Vcc
SC
-
IN
VPC
≥0.1µ
OT
GND
E1C2 (U)
20k
≥10µ
VN1
Vcc OUT
FNO VD2
IF
20k
IN
VNC
≥0.1µ
≥10µ
OT
Fo
CNI
VD3
C1 Vcc OUT OT Fo
CPI ≥0.1µ
E2
VP1 FPO
IF
SC
GND
IN
VPC
SC
GND
E1C2 (V)
20k
≥10µ
VN1
Vcc OUT
FNO VD4
IF
OT
Fo
CNI
SC IN
VNC
≥0.1µ
M
GND
E2
C1 20k
≥10µ
VP1
Vcc OUT
FPO VD5
IF
OT Fo
CPI
SC
IN
VPC
≥0.1µ
GND
E1C2 (W)
20k
≥10µ
VN1
Vcc OUT
FNO VD6
IF
OT Fo
CNI ≥0.1µ
IN
VNC
SC
GND
E2
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type. • Slow switching opto-coupler: CTR > 100% • Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal.
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MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL) 2.5
200
Tj=25°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT IC (A)
180 160 140
VD=13V
120
VD=17V
VD=15V
100 80 60 40 20 0
1.5
1
VD=15V 0.5
Tj=25°C Tj=125°C 0
0.5
1.0
1.5
2.0
0
50
100
150
200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL)
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 200
2.5
180
Ic=200A Tj=25°C
VD=15V Tj=25°C
160
EMITTER CURRENT IE (A)
COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V)
2
Tj=125°C 2.0
1.5
Tj=125°C
140 120 100 80 60 40 20 0
1.0 12
13
14
15
16
17
0
18
CONTROL VOLTAGE VD (V)
0.5
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE VEC (V)
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November. 2011
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL)
10.0
10.0
Vcc=600V
SWITCHING TIME tc(on), tc(off) (μs)
1.0 ton
Vcc=600V VD=15V Tj=25°C Tj=125°C Inductive Load
Tj=25°C tc(off)
Tj=125°C Inductive Load
1.0
tc(on)
0.1
0.1
10
100
1000
10
100
1000
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
SWITCHING ENERGY CHARACTERISTICS (TYPICAL)
FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.6
30
120
Vcc=600V
Vcc=600V VD=15V
25
REVERSE RECOVERY TIME trr (μs)
SWITCHING ENERGY Eon, Eoff (mJ/pulse)
VD=15V
Eoff
Tj=25°C Tj=125°C Inductive Load
20
15
10
5
Eon 0
Irr
VD=15V 0.5
100
Tj=25°C Tj=125°C Inductive Load
0.4
80
0.3
60
0.2
40
trr
0.1
0
0
50
100
150
200
250
0
COLLECTOR CURRENT IC (A)
50
100
150
200
20
REVERSE RECOVERY CURRENT Irr (A)
SWITCHING TIME ton, toff (μs)
toff
0 250
EMITTER CURRENT IE (A)
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November. 2011
MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
ID VS. fc CHARACTERISTICS (TYPICAL)
12
70
Vcc=600V VD=15V
10
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
50
Inductive Load
8
6
40
30
4 20
2
10
0
0 0
50
100
150
200
0
250
5
10
15
20
25
EMITTER CURRENT IE (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2
20 18
1.8
UVt
SC (SC of Tj=25°C is normalized 1)
UVr
16 14
UVt / UVr (V)
VD=15V
60
ID (mA)
REVESE RECOVERY ENERGY Err (mJ/pulse)
FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL)
12 10 8 6 4
VD=15V
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2
2
0
0 -50
0
50
100
-50
150
Tj (°C)
0
50
100
150
Tj (°C)
9
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MITSUBISHI
PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
1
0.1
Single Pulse
0.01
IGBT Part; Per unit base: Rth(j-c)Q=0.09 K/W FWDi Part; Per unit base: Rth(j-c)D=0.146 K/W
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
TIME t (sec)
10
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