Transcript
http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-120E-50
IGBT Modules
IGBT MODULE (V series) 1200V / 1400A / 2 in one package Features
High speed switching Voltage drive Low Inductance module structure
Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Inverter
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Ic
Continuous
Collector current
Maximum ratings 1200 ±20 1800 1400 2800 1400 2800 7650 175 150 150 -40 ~ +150
Units V V
AC : 1min.
4000
VAC
M5 M8 M4
6.0 10.0 2.1
Nm
1ms
Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Viso Isolation voltage between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals
Tc=25°C Tc=100°C
1ms 1 device
A W °C
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Thermistor
Forward on voltage
Symbols
Conditions
ICES IGES VGE (th) VCE (sat) (terminal) (*4)
VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 1400mA
VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip)
Reverse recovery time
trr
Resistance
R
B value
B
VGE = 15V IC = 1400A VCE = 10V, VGE = 0V, f = 1MHz
Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
VCC =600V, Ic =1400A, VGE=±15V, RG =1Ω, Ls=60nH
VGE = 0V IF = 1400A IF = 1400A T=25°C T=100°C T=25/50°C
Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
Characteristics min. typ. max. 12.0 2400 6.0 6.5 7.0 1.85 2.30 2.15 2.20 1.75 2.20 2.05 2.10 0.79 128 1000 400 150 1200 150 1.90 2.35 2.05 2.00 1.80 2.25 1.95 1.90 200 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF nsec
V
nsec Ω K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions Inverter IGBT Inverter FWD with Thermal Compound
Characteristics min. typ. max. 0.0195 0.0360 0.00420 -
Units °C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
8204a JUNE 2015
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
3000
3000
15V
12V
1500 10V
1000 500
8V
0
1
2
3
4
12V 2000 10V
1500 1000
8V 500 0
5
0
1
3
4
5
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip
3000
10
125°C Collector-Emitter Voltage: VCE [V]
2500 Collector Current: IC [A]
2
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
2000 Tj=25°C
1500
150°C
1000 500 0
0
1
2
3
8
6
4
0
4
Ic=2800A Ic=1400A Ic=700A
2
5
10
[INVERTER]
1000
20.00
Gate-Emitter voltage: VGE [V]
15.00 Cies
***
100
Cres
0
5
10
15
600
10.00
400
5.00
200
0.00
0
-5.00
-15.00
20
25
25
800
VCE
-200
-10.00
Coes 1
20
[INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=1400A, Tj= 25°C
Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C
10
15
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
Gate Capacitance: Cies, Coes, Cres [nF]
15V
30
-20.00 -15000
-400 VGE
-5000
-600 5000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
2
-800 15000
Collector-Emitter voltage: VCE [V]
Collector current: IC [A]
2000
0
VGE= 20V
2500 Collector current: IC [A]
VGE=20V 2500
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER] Switching time vs. Collector current (typ.)
[INVERTER] Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1Ω, Tj=25°C
Vcc=600V, VGE=±15V, Rg=1Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff 1000 ton
tr tf
100
10
0
500
1000
1500
2000
2500
3000
toff 1000
ton
tf
100 Tj=125oC Tj=150oC 10
0
500
Collector current: IC [A]
1500
2000
2500
[INVERTER] Switching time vs. Gate resistance (typ.)
[INVERTER] Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
Vcc=600V, VGE=±15V, Rg=1Ω, Tj=125°C, 150°C 800 Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
1000
toff 1000
tr
ton
tf
100 Tj=125oC Tj=150oC 10
0.1
1
10
Tj=125oC Tj=150oC
700 600 500 400
Eoff
300
Eon
200 100 0
Err 0
500
1000
1500
2000
2500
3000
Collector current: IC [A]
Gate resistance: Rg [Ω]
[INVERTER] Switching loss vs. Gate resistance (typ.)
[INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=1Ω, Tj=150°C
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C 700
3000 Tj=125oC Tj=150oC
600
2500 Collector current: IC [A]
500 400 Eoff
300
Eon
200
Err
100 0
3000
Collector current: IC [A]
10000
Switching loss: Eon, Eoff, Err [mJ/pulse]
tr
0
1
2000 1500 1000 500 0
10
Gate resistance: Rg [Ω]
Notice) Please refer to Page 6. There is definision of VCE.
0
500
1000
Collector-Emitter voltage: VCE [V]
3
1500
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=1Ω, Tj=25°C
[INVERTER] Forward Current vs. Forward Voltage (typ.) chip
10000
3000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Forward current: IF [A]
2500
Tj=25°C
2000 1500 1000
150°C
125°C
500
0
1 2 Forward on voltage: VF [V]
0
3
1500
2000
2500
3000
1
10000 Thermal resistanse: Rth(j-c) [�C/W]
Tj=125oC Tj=150oC Irr
1000
trr 100
0.1
FWD
0.01
IGBT
0.001
n τ n [sec]
500
1000
1500
2000
2500
0.0001 0.001
3000
1
2
3
4
0.0023
0.0301
0.0598
0.0708
rn
IGBT
0.00209
0.00530
0.00749
0.00461
[ C/W]
FWD
0.00386
0.00979
0.01383
0.00852
o
0
t
4
− Rth(j-c) = ∑ rn × 1 − e τ n n =1
Forward current: IF [A]
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.)
Temperature characteristic (typ.)
Tj=150°C
100
3000
Reverse recovery current: Irr [A]
Resistance : R [kΩ]
1000
Transient Thermal Resistance (max.)
Vcc=600V, VGE=±15V, Rg=1Ω, Tj=125°C, 150°C
10
1
0.1
500
Forward current: IF [A]
[INVERTER] Reverse Recovery Characteristics (typ.)
Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
trr
100
10
0
10
Irr
1000
-60 -40 -20
0
20
40
60
2500
1500 1000
Temperature [°C]
4
Notice) Please refer to page 6. There is definision of VCE.
500 0
80 100 120 140 160
Pmax=1400kW
2000
0
500 1000 Collector-Emitter voltage: VCE [V]
1500
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
LABEL
Outline Drawings, mm
Weight:1250g(typ.)
Equivalent Circuit Schematic [ Inverter ]
[ Thermistor ]
Main C1 (9 ), (11)
Main C2E1 (8)
Sense C1 (5)
TH1 (7)
G1(4)
TH2 (6)
Sense C2E1(3)
G2 (1) Sense E2 (2) Main E2 (10) , (12)
5
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
Sense C1
G1
VCE (terminal) of Upper arm
Sense C2E1
Main C2E1
G2
Main E2
VCE (terminal) of Lower arm
Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Please use these terminals whenever measure spike voltage and on-state voltage .
Sense E2
6
2MBI1400VXB-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. D o not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. C opyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
7
