Transcript
http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-170P-54
IGBT Modules
IGBT MODULE (V series) 1700V / 1400A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Inverter
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Ic
Continuous
Collector current
Maximum ratings 1700 ±20 1800 1400 2800 1400 2800 8820 175 150 150 -40 ~ +150
Units V V
AC : 1min.
4000
VAC
M5 M8 M4
6.0 10.0 2.1
Nm
1ms
Ic pulse -Ic -Ic pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Viso Isolation voltage between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals
1ms 1 device
TC =25°C TC =100°C
A W °C
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
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8085 SEPTEMBER 2013
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Thermistor
Forward on voltage
Symbols
Conditions
ICES IGES VGE (th) VCE (sat) (terminal) (*4)
VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, IC = 1400mA
VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip)
Reverse recovery time
trr
Resistance
R
B value
B
VGE = 15V IC = 1400A
Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V IC = 1400A VGE = ±15V RG = +0.47/-0.68Ω LS = 40nH Tj =25°C Tj =125°C Tj =150°C VGE = 0V IF = 1400A Tj =25°C Tj =125°C Tj =150°C IF = 1400A T=25°C T=100°C T=25/50°C
Characteristics min. typ. max. 12.0 2400 6.0 6.5 7.0 2.10 2.55 2.45 2.55 1.90 2.35 2.25 2.35 2.25 113 1350 300 150 1800 200 2.00 2.45 2.25 2.20 1.80 2.25 2.05 2.00 250 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF nsec
V
nsec Ω K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions Inverter IGBT Inverter FWD with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.017 0.032 0.0042 -
Units °C/W
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
3000
3000
VGE=20V
15V
VGE= 20V
Collector current: Ic [A]
12V
2000 1500
1500 10V
10V
1000
1000 500
8V 0
1
2
3
4
500 0
5
8V
0
Collector-Emitter voltage: VCE [V]
2
3
4
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10
125°C
2500
Collector-Emitter Voltage: Vce [V]
Tj=25°C
150°C
2000 1500 1000 500 0
0
1
2
3
4
8
6
4
0
5
Ic=2800A Ic=1400A Ic=700A
2
Collector-Emitter Voltage: VCE [V]
5
10
15
20
[INVERTER]
[INVERTER] Dynamic Gate Charge (typ.) Vcc=900V, Ic=1400A, Tj= 25°C
Gate-Emitter voltage: VGE [V]
15 Cies
Cres
10
Coes 1
1000
20
1000
100
0
5
10
15
20
25
25
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF]
5
Collector-Emitter voltage: VCE [V]
3000
Collector Current: Ic [A]
1
750
VCE
10
500
5
250
0 -5
VGE
0 -250
-10
-500
-15
-750
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
12V 2000
0
15V
2500
2500
-1000 -20 -15000 -10000 -5000 0 5000 10000 15000 Gate charge: Qg [nC]
30
Collector-Emitter voltage: VCE [V]
3
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER]
Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+0.47/-0.68Ω, Tj=25°C
Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+0.47/-0.68Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000 toff 1000
ton
tr
tf
100
10
0
500
1000
1500
2000
2500
3000
toff ton
1000
tf 100 Tj=125oC Tj=150oC 10
0
500
1000
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
2000 toff
tr
ton tf
100 Tj=125oC Tj=150oC
1
10
100
1600 1400
Eoff
1200 1000
Eon
800 600 400
Err
200 0
0
500
1000
1500
2000
2500
3000
Collector current: Ic [A]
[INVERTER]
[INVERTER]
Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=+0.47/-0.68Ω, Tj=150°C 3000
2500 Tj=125oC Tj=150oC
2000
Eon
2500 Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
3000
Tj=125oC Tj=150oC
1800
Gate resistance: RG [Ω]
1500 Eoff
1000 500
Err 0
2500
Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+0.47/-0.68Ω, Tj=125°C, 150°C
10000
0.1
2000
[INVERTER]
[INVERTER]
10
1500
Collector current: Ic [A]
Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
1000
tr
0
1
10
2000 1500 1000 500 0
100
Gate resistance: RG [Ω]
Notice) Please refer to page 7. There is definision of VCE.
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
4
2000
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=±15V, RG=+0.47/-0.68Ω, Tj=25°C
Forward Current vs. Forward Voltage (typ.) chip 3000
10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Forward current: IF [A]
2500 Tj=25°C
2000 1500
125°C
1000 150°C
500 0 0
1
2
1000
trr 100
10
3
Irr
0
500
Forward on voltage: VF [V]
Thermal resistanse: Rth(j-c) [°C/W] ***
Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
2500
3000
0.1 Tj=125oC Tj=150oC Irr
1000
trr 100
0
500
1000
1500
2000
2500
3000
FWD
0.01
IGBT
4
0.001
Rth(j-c) =
∑ r × (1-e -t/τn) n =1
T
Rth 〔°C/W〕
0.0001 0.001
Forward current: IF [A]
〔sec〕 IGBT FWD
0.0023 0.00182 0.00343
n
0.0301 0.00462 0.00870
0.01
0.0598 0.00653 0.01229
0.0708 0.00402 0.00757
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.)
Temperature characteristic (typ.)
Tj=150°C
100
3000
Reverse recovery current: Irr [A]
Resistance : R [kΩ]
2000
Transient Thermal Resistance (max.)
10000
10
1
0.1
1500
Forward current: IF [A]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=±15V, RG=+0.47/-0.68Ω, Tj=125°C, 150°C
10
1000
-60 -40 -20
0
20
40
60
2500 Pmax=1750kW 2000 1500 1000 500 0
80 100 120 140 160
Temperature [°C]
Notice) Please refer to page 7. There is definision of VCE.
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
5
2000
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
LABEL1
Outline Drawings, mm
LABEL3
LABEL2
LABEL3 VCE(sat),VF classification
LABEL2 (Fuji internal control codes) * This label may be eliminated without notification.
Weight:1250g(typ.)
Equivalent Circuit Schematic [ Inverter ]
[ Thermistor ]
Main C1
Sense C1
G1 Main C2E1
Sense C2E1
G2 Sense E2 Main E2
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TH1
TH2
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
G1 Main C2E1
VCE (terminal) of Upper arm
Sense C2E1
G2
Main E2
Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm .
Sense C1
VCE (terminal) of Lower arm
Sense E2
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Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Please use these terminals whenever measure spike voltage and on-state voltage .
2MBI1400VXB-170P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji’s products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other’s intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices• Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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