Transcript
2MBI225VX-170-50
IGBT Modules
Power Module (V series) 1700V / 225A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solderless press-fit terminals
■ Applications Inverter for Motor Drives, AC and DC Servo Drives Uninterruptible Power Supply Systems, Wind Turbines, PV Power Conditioning Systems
■ Outline drawing ( Unit : mm )
Weight: 350g (typ.)
■ Equivalent Circuit [ Inverter ] C P
[ Thermistor ] T1
T2 G1 E1 OUT
G2 E2 N
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■ Absolute Maximum Ratings (at TC= 25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES IC
Collector current
Conditions
IC pulse -IC -IC pulse PC Tj
Continuous 1ms
TC=25oC TC=100oC
Maximum Ratings 1700 ±20 300 225 450 225 450 1500 175
Units V V
A
1ms Collector power dissipation 1 device W Junction temperature Operating junction temperature Tjop 150 o (under switching conditions) C Tc Case temperature 125 Tstg Storage temperature -40 ~ 125 Isolation between terminal and copper base (*1) Viso AC: 1min. 3400 VAC between thermistor and others (*2) voltage 3.5 Mounting (*3) Screw Nm Torque 4.5 Terminals (*4) (*1) All terminals should be connected together during the test. (*2) Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. (*3) Recommendable Value : 2.5-3.5 Nm (M5) (*4) Recommendable Value : 3.5-4.5 Nm (M6)
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■ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Characteristics min. typ. max.
Conditions
ICES
VGE=0V, VCE=1700V
-
-
3.0
mA
IGES
VCE=0V, VGE=±20V
-
-
600
nA
6.0
6.5
7.0
V
Tj=25 C
-
2.35
2.80
o
Tj=125 C
-
2.80
-
Tj=150oC
-
2.85
-
Tj=25 C
-
2.00
2.45
Tj=125oC
-
2.45
-
Tj=150oC
Tj=25oC
-
2.50 3.33 23 900 450 100 1050 80 2.15
2.60
Tj=125oC
-
2.35
-
VGE = 0V
Tj=150oC
-
2.35
-
IF= 225A
Tj=25oC
-
1.80
2.25
Tj=125oC
-
2.05
-
Tj=150oC
465 3305
2.00 200 5000 495 3375
520 3450
VGE(th)
VCE=20V, IC=225mA o
VCE(sat) (terminal) Collector-Emitter saturation voltage VCE(sat) (chip) Internal gate resistance Input capacitance Turn-on time Turn-off time
Units
RG(int) Cies ton tr tr(i) toff tf VF (terminal)
Forward on voltage VF (chip) Reverse recovery time
trr
Thermistor Resistance
R
Thermistor B value
B
VGE = 15V IC=225A
o
VCE=10V, VGE=0V, f=1MHz VCC= 900V VGE= ±15V Ls= 80nH
IC= 225A RG= 6.8Ω
IF=225A T=25oC T=100oC T=25/50oC
V
Ω nF
nsec
V
nsec Ω K
5. Thermal resistance characteristics Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*1)
Rth(c-f)
Conditions
Characteristics min. typ. max.
IGBT FWD
-
-
0.12 0.20
with thermal compound
-
0.0167
-
Units o
C/W
(*1) This is the value which is defined mounting on the additional cooling fin with thermal compound.
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Collector current vs. Collector-Emitter voltage Tj = 25oC / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj = 150oC / chip
500
500 VGE=20V 15V
15V
400
12V
Collector current: IC [A]
400 Collector current: IC [A]
VGE= 20V
12V
300
300 10V
10V
200
200
100
100
8V
8V 0
0 0
1
2
3
4
0
5
Collector-Emitter voltage: VCE [V]
2
4
5
Collector-Emitter voltage vs. Gate-Emitter voltage Tj = 25oC / chip
500
10 125oC
Tj=25oC
Collector-Emitter Voltage: VCE [V]
150oC
400
300
200
100
0
8
6
4 IC=450A IC=225A IC=113A
2
0 1
2
3
4
5
5
10
Collector-Emitter Voltage: VCE [V]
15
20
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.) Vcc=900V, Ic=225A, Tj= 25°C
Capacitance vs. Collector-Emitter Voltage VGE= 0V, f= 1MHz, Tj= 25oC 1000
20 Gate-Emitter voltage: VGE [V]
15 100 Cies 10 Cres 1
Coes
0.1 0
10
20
25
Collector-Emitter voltage: VCE [V]
VCE
750
10
500
5
250
0
0
-5 -10
-250 VGE
-500
-15 -20 -4000
30
1000
-750
-2000
0
2000
Gate charge: QG [nC]
4
Collector-Emitter voltage: VCE [V]
0
Gate Capacitance: Cies, Coes, Cres [nF]
3
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage VGE = 15V / chip
Collector Current: IC [A]
1
-1000 4000
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Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=6.8Ω, Tj=25°C
10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=6.8Ω, Tj=125°C, 150°C
toff 1000
Tj=125oC Tj=150oC toff
1000
ton tr tf
100
ton tr 100
10
tf
10 0
100
200
300
400
500
0
100
200
Collector current: IC [A]
500
Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=6.8Ω, Tj=125°C, 150°C
10000
250 Tj=125oC Tj=150oC
1000
toff
ton tr
100 tf
10 1
Tj=125oC Tj=150oC
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
400
Collector current: IC [A]
Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
10
200 Eon 150 Eoff 100 Err
50
0
100
0
100
Gate resistance: RG [Ω]
200
300
400
500
Collector current: IC [A]
Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=6.8Ω, Tj=150°C
300
600 Tj=125oC Tj=150oC
Eon
500 Collector current: IC [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
300
200
400 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm.
300
Eoff
200
100
100
Err 0
0 1
10
0
100
500
1000
1500
2000
Collector-Emitter voltage: VCE [V]
Gate resistance: RG [Ω]
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Forward current vs. Forward vltage (typ.) chip 500
10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Tj=25oC
Forward current: IF [A]
400
1000
300
200 125oC
100 150oC
Irr
trr
100
0
10 0
1
2
3
4
0
100
Forward on voltage: VF [V]
300
400
500
Forward current: IF [A]
Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=±15V, Rg=6.8Ω, Tj=125℃,150℃
Transient Thermal Resistance (max.) 1
Irr
trr 100 Tj=125oC Tj=150oC
10 0
100
200
300
400
Thermal resistance: Rth(j-c) [oC/W] ***
1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
200
FWD 0.1 IGBT
0.01
τ
[sec]
0.0023
0.0301
0.0598
0.0708
Rth
IGBT
0.01287
0.03263
0.04610
0.02839
[°C/W]
FWD
0.02145
0.05439
0.07684
0.04732
0.001 0.001
500
0.01
Forward current: IF [A]
0.1
1
Pulse Width : PW [sec]
[THERMISTOR] Temperature characteristic (typ.)
FWD safe operating area (max.) Tj=150°C
500
100
Reverse recovery current: Irr [A]
Resistance : R [kΩ]
400 10
1
0.1 -60 -40 -20
0
20
40
60
Pmax=281kW 300
200 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1
100
0 0
80 100 120 140 160
Temperature [oC]
500
1000
1500
Collector-Emitter voltage: VCE [V]
6
2000
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Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 12/2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ･Computers ･OA equipment ･Communications equipment (terminal devices) ･Measurement equipment ･Machine tools ･Audiovisual equipment ･Electrical home appliances ･Personal equipment ･Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. ･Transportation equipment (mounted on cars and ships) ･Trunk communications equipment ･Traffic-signal control equipment ･Gas leakage detectors with an auto-shut-off feature ･Emergency equipment for responding to disasters and anti-burglary devices ･Safety devices ･Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ･Space equipment ･Aeronautic equipment ･Nuclear control equipment ･Submarine repeater equipment 7. Copyright (c)1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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