2mbi400vb-060-50

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http://www.fujielectric.com/products/semiconductor/ 2MBI400VB-060-50 IGBT Modules IGBT MODULE (V series) 600V / 400A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC IC pulse Collector current -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) - Conditions Continuous 1ms TC =80°C 1ms 1 device AC : 1min. Maximum ratings 600 ±20 400 800 400 800 1970 175 150 125 -40 ~ 125 2500 3.5 3.5 Units V V W °C VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VGE = 0V, VCE = 600V VCE = 0V, VGE = ±20V VCE = 20V, IC = 400mA VCE (sat) (terminal) VGE = 15V IC = 400A VCE (sat) (chip) VGE = 15V IC = 400A RG (int) Cies ton tr tr (i) toff tf VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V LS = 30nH IC = 400A VGE = ±15V RG = 3.3Ω Tj = 150°C VF (terminal) VGE = 0V IF = 400A VF (chip) VGE = 0V IF = 400A trr IF = 400A Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics IGBT FWD with Thermal Compound Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 2.0 400 6.2 6.7 7.2 1.90 2.35 2.20 2.30 1.60 2.05 1.90 2.00 2.0 25.6 650 300 100 600 70 1.75 2.20 1.65 1.62 1.60 2.05 1.50 1.47 200 Characteristics min. typ. max. 0.076 0.140 0.025 - Units mA nA V V Ω nF nsec V nsec Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 7724a JULY 2015 2MBI400VB-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 1000 VGE=20V 15V VGE= 20V 800 12V Collector current: IC [A] 600 10V 400 200 15V 12V 600 10V 400 200 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage: VCE [V] 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip 10 1000 Collector-Emitter Voltage: VCE [V] Tj=25°C 125°C 150°C 800 Collector Current: IC [A] 3 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 600 400 200 8 6 4 IC=800A IC=400A IC=200A 2 0 0 0 1 2 3 Collector-Emitter Voltage: VCE [V] 5 4 10 15 20 25 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) VCC=300V, IC=400A, Tj= 25°C Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 20 400 15 Gate-Emitter voltage: VGE [V] Gate Capacitance: Cies, Coes, Cres [nF] *** 2 Cies 10 Coes Cres 1 0 10 20 300 VCE 10 200 5 100 0 0 VGE -5 -100 -10 -200 -15 -300 -20 30 -400 -3 Collector-Emitter voltage: VCE [V] -2 -1 0 1 Gate charge: Qg [ μC] 2 2 3 Collector-Emitter voltage: VCE [V] Collector current: IC [A] 800 2MBI400VB-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=3.3Ω, Tj=125°C Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=3.3Ω, Tj=150°C 10000 1000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 ton toff tr 100 tf 10 0 200 400 600 800 1000 1000 tr 100 tf 10 0 200 Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] toff 1000 tr 100 tf 10 10 100 Tj=125°C Tj=150°C 40 35 1000 Eoff 30 25 Eon 20 15 10 Err 5 0 0 200 Gate resistance: RG [Ω] 400 600 800 1000 Collector current: IC [A] Switching loss vs. Gate resistance (typ.) VCC=300V, IC=400A, VGE=±15V, Tj=125, 150°C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=3.3Ω, Tj=150°C 120 1000 Tj=125°C Tj=150°C Eon Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 800 45 ton 80 60 Eoff 40 20 Err 0 1 600 Switching loss vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=3.3Ω, Tj=125, 150°C 10000 100 400 Collector current: IC [A] Switching time vs. Gate resistance (typ.) VCC=300V, IC=400A, VGE=±15V, Tj=125°C 1 ton toff 10 800 600 400 200 0 100 0 Gate resistance: RG [Ω] 3 200 400 600 Collector-Emitter voltage: VCE [V] (Main terminals) 800 2MBI400VB-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) VCC=300V, VGE=±15V, RG=3.3Ω, Tj=125°C 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1000 Forward current: IF [A] 800 600 400 Tj=25°C 150°C 200 125°C trr Irr 100 10 0 0 1 2 0 3 200 Forward on voltage: VF [V] Reverse Recovery Characteristics (typ.) VCC=300V, VGE=±15V, RG=3.3Ω, Tj=150°C *** Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] trr Irr 100 10 200 400 600 600 800 1000 Transient Thermal Resistance (max.) 1000 0 400 Forward current: IF [A] 800 1 FWD 0.1 IGBT 0.01 τ(i) Rth(i) [°C/W] 0.001 0.001 1000 Forward current: IF [A] [sec] IGBT FWD 0.001 0.019 0.050 0.063 0.00714 0.01698 0.02930 0.02273 0.01316 0.03129 0.05397 0.04188 0.01 0.1 Pulse Width : Pw [sec] 4 1 2MBI400VB-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Weight: 270g (typ.) Equivalent Circuit Schematic C1 G1 E1 C2E1 G2 E2 E2 5 2MBI400VB-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of July 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. 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