Transcript
http://www.fujielectric.com/products/semiconductor/
2MBI600VXA-120E-50
IGBT Modules
IGBT MODULE (V series) 1200V / 600A / 2 in one package Features
High speed switching Voltage drive Low Inductance module structure
Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Inverter
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Ic
Continuous
Collector current
Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals
Maximum ratings 1200 ±20 800 600 1200 600 1200 3350 175 150 150 -40 ~ +150
Units V V
AC : 1min.
4000
VAC
M5 M8 M4
6.0 10.0 2.1
Nm
1ms
Tc=25°C Tc=100°C
1ms 1 device
A W °C
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Thermistor
Forward on voltage
Symbols
Conditions
ICES IGES VGE (th) VCE (sat) (terminal) (*4)
VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 600mA
VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip)
Reverse recovery time
trr
Resistance
R
B value
B
VGE = 15V IC = 600A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 600A VGE = ±15V RG = 2.4Ω Ls=70nH VGE = 0V IF = 600A IF = 600A T=25°C T=100°C T=25/50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 4.0 800 6.0 6.5 7.0 1.85 2.30 2.15 2.20 1.75 2.20 2.05 2.10 1.75 55 1.00 0.40 0.15 1.20 0.15 1.80 2.25 1.95 1.90 1.70 2.15 1.85 1.80 0.20 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF µsec
V
µsec Ω K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions Inverter IGBT Inverter FWD with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Characteristics min. typ. max. 0.045 0.075 0.0125 -
Units °C/W
7566c MARCH 2014
2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1500
1500
VGE= 20V
12V Collector current: Ic [A]
1000
10V 500
15V 12V
1000 10V 500 8V
8V 0
0 0
1
2
3
4
0
5
2
3
4
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10
Tj=25°C
125°C
Collector-Emitter Voltage: VCE [V]
1500 150°C
1000
500
0
8 6 4 Ic=1200A Ic=600A Ic=300A
2 0
0
1
2
3
5
4
10
15
20
[INVERTER]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.) Vcc=600V, Ic=600A, Tj= 25°C 20.00
1000 Gate-Emitter voltage: VGE [V]
15.00
100 ***
Cies
10 Cres
Coes 1 0
5
10
15
20
25
25
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
Gate Capacitance: Cies, Coes, Cres [nF]
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector Current: Ic [A]
1
600
10.00
400
5.00
200
0.00 -5.00
0
VGE
-400
-15.00
-600 -1000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
2
-200
-10.00
-20.00 -6000
30
800
VCE
4000
-800
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
VGE=20V 15V
2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.4Ω, Tj=25°C
[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.4Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff 1000 ton
tr tf
100
10 0
500
1000
toff 1000
ton
tf
10
1500
0
500
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
toff 1000 tr tf Tj=125oC Tj=150oC 10 1
10
300
Tj=125oC Tj=150oC
200 Eoff Eon
100
Err 0 0
500
1500
[INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=2.4Ω, Tj=150°C
[INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C 400
1400
Tj=125oC Tj=150oC
1200 Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
1000
Collector current: Ic [A]
Gate resistance: RG [Ω]
Eon
200 Eoff 100
1000 800
Notice) Please refer to page 6. There is definision of VCE.
600 400 200
Err
0
0 1
1500
[INVERTER] Switching loss vs. Collector current (typ.) Vcc=600V , VGE=±15V, RG=2.4Ω, Tj=125°C, 150°C
10000
300
1000
Collector current: Ic [A]
[INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
100
tr
100
Collector current: Ic [A]
ton
Tj=125oC Tj=150oC
10 Gate resistance: RG [Ω]
0
500
1000
Collector-Emitter voltage: VCE [V]
3
1500
2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=2.4Ω, Tj=25°C
Forward Current vs. Forward Voltage (typ.) chip
10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
1500
Forward current: IF [A]
Tj=25°C 1000 125°C 500 150°C 0
1000 Irr trr
100
10 0
1
2
3
0
Forward on voltage: VF [V]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=2.4Ω, Tj=125°C, 150°C
1500
1
Tj=125oC Tj=150oC
Thermal resistanse: Rth(j-c) [°C/W]
Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
1000
Transient Thermal Resistance (max.)
10000
1000 Irr trr 100
10 0
500
1000
FWD
0.1
IGBT 0.01
0.001 T 〔 sec 〕 Rth IGBT 〔°C/W〕 FWD
0.0001 0.001
1500
Forward current: IF [A]
0.0023 0.00483 0.00804
0.0301 0.01224 0.02040
0.01
0.0598 0.01729 0.02881
0.0708 0.01065 0.01775
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.)
Temperature characteristic (typ.)
Tj=150°C
100
1500
Reverse recovery current: Irr [A]
Resistance : R [kΩ]
500
Forward current: IF [A]
10
1
1000
500
Notice) Please refer to page 6. There is definision of VCE. 0
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
Pmax=600kW
0
500
1000
Collector-Emitter voltage: VCE [V]
4
1500
2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
LABEL1
Outline Drawings (Unit: mm)
Weight:850g(typ.)
[ Inverter ]
Equivalent Circuit
[ Thermistor ]
Main C1(9) Sense C1(5)
G1(4) Sense C2E1(3)
Main C2E1(8)
G2(1) Sense E2(2) Main E2(10)
5
TH1(7)
TH2(6)
2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
G1 Main C2E1
VCE (terminal) of Upper arm
Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm .
Sense C2E1
G2
Main E2
Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm .
Sense C1
Please use these terminals whenever measure spike voltage and on-state voltage .
VCE (terminal) of Lower arm
Sense E2
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2MBI600VXA-120E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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