Transcript
http://www.fujielectric.com/products/semiconductor/
2MBI900VXA-120P-54
IGBT Modules
IGBT MODULE (V series) 1200V / 900A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Conditions
Inverter
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Ic
Continuous
Collector current
Maximum ratings 1200 ±20 1200 900 1800 900 1800 5100 175 150 150 -40 ~ +150
Units V V
AC : 1min.
4000
VAC
M5 M8 M4
6.0 10.0 2.1
Nm
1ms
Ic pulse -Ic -Ic pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Viso Isolation voltage between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals
1ms 1 device
TC =25°C TC =100°C
A W °C
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
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8082 SEPTEMBER 2013
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
Thermistor
Forward on voltage
Symbols
Conditions
ICES IGES VGE (th) VCE (sat) (terminal) (*4)
VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 900mA
VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip)
Reverse recovery time
trr
Resistance
R
B value
B
VGE = 15V IC = 900A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 900A VGE = ±15V RG = 1.6Ω LS = 70nH VGE = 0V IF = 900A IF = 900A T=25°C T=100°C T=25/50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 8.0 1600 6.0 6.5 7.0 1.75 2.20 2.10 2.15 1.65 2.10 2.00 2.05 1.19 83 1000 400 150 1200 150 1.90 2.35 2.05 2.00 1.80 2.25 1.95 1.90 200 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF nsec
V
nsec Ω K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions Inverter IGBT Inverter FWD with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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Characteristics min. typ. max. 0.030 0.054 0.00625 -
Units °C/W
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
2000 VGE=20V
VGE= 20V
12V
1500
Collector current: Ic [A]
Collector current: Ic [A]
2000
15V
10V 1000
500
15V
12V
1500 10V 1000
8V
500
8V 0
0 0
1
2
3
4
0
5
Collector-Emitter voltage: VCE [V]
3
4
5
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10
125°C
Tj=25°C
1500
Collector-Emitter Voltage: VCE [V]
150°C
1000
500
0
8 6 4 Ic=1800A Ic=900A Ic=450A
2 0
0
1
2
3
4
5
20.00
1000
Gate-Emitter voltage: VGE [V]
15.00
Cies
***
Cres Coes
5
10
15
20
25
25
30
800
VCE
600
10.00
400
5.00
200
0.00
0
VGE
-5.00
-200
-10.00
-400
-15.00
-600
-20.00 -10000
1 0
20
[INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=900A, Tj= 25°C
[INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C
10
15
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
100
10
-5000
0
5000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
3
-800 10000
Collector-Emitter voltage: VCE [V]
Collector Current: Ic [A]
2
Collector-Emitter voltage: VCE [V]
2000
Gate Capacitance: Cies, Coes, Cres [nF]
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2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=25°C
[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff 1000 ton
tr tf
100
10 0
500
1000
1500
toff 1000
ton
tf
10
2000
0
500
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
toff ton tr tf Tj=125oC Tj=150oC 10 1
600
2000
Tj=125oC Tj=150oC
500 400
Eoff
300 200
Eon
100 Err
0
10
0
500
1000
1500
2000
Collector current: Ic [A]
Gate resistance: RG [Ω]
[INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C
[INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=900A, VGE=±15V, Tj=125°C, 150°C 500
2000
Tj=125oC Tj=150oC
400
1800
300
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
1500
[INVERTER] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000
0.1
1000
Collector current: Ic [A]
[INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=900A, VGE=±15V, Tj=125°C, 150°C
100
tr
100
Collector current: Ic [A]
1000
Tj=125oC Tj=150oC
Eoff
200
Eon
100
Err
1600 1400 1200 1000
Notice) Please refer to page 7. There is definision of VCE.
800 600 400 200
0
0
0
1
10
Gate resistance: RG [Ω]
0
500
1000
Collector-Emitter voltage: VCE [V]
4
1500
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER]
Forward Current vs. Forward Voltage (typ.) chip
Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=25°C 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Forward current: IF [A]
2000 Tj=25°C
1500
1000 125°C 500
0
150°C
0
1
2
Irr
1000
trr
100
10
3
0
500
Forward on voltage: VF [V]
1 Thermal resistanse: Rth(j-c) [°C/W] ***
Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Tj=125oC Tj=150oC Irr
1000
trr 100
0
500
1000
1500
2000
FWD
0.1
IGBT
0.01 4
Rth(j-c) =
0.001
∑ r × (1-e -t/τn) n =1
T
Rth 〔°C/W〕
0.0001 0.001
Forward current: IF [A]
〔sec〕 IGBT FWD
0.0023 0.00322 0.00579
0.01
n
0.0301 0.00816 0.01469
0.0598 0.01153 0.02075
0.0708 0.00710 0.01278
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.)
Temperature characteristic (typ.)
Tj=150°C 2000
Reverse recovery current: Irr [A]
100
Resistance : R [kΩ]
2000
Transient Thermal Resistance (max.)
10000
10
1
0.1
1500
Forward current: IF [A]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10
1000
-60 -40 -20
0
20
40
60
1500 Pmax=900kW 1000
0
80 100 120 140 160
Temperature [°C]
5
Notice) Please refer to page 7. There is definision of VCE.
500
0
500 1000 Collector-Emitter voltage: VCE [V]
1500
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
LABEL3 VCE(sat),VF classification
LABEL1
LABEL3
LABEL2
y
. LABEL2 (Fuji internal
control codes) * This label may be eliminated without notification.
Weight:850g(typ.)
Equivalent Circuit Schematic [ Thermistor ]
[ Inverter ]
Main C1 Sense C1 G1 Main C2E1
Sense C2E1
G2 Sense E2 Main E2
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TH1
TH2
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
G1 Main C2E1
VCE (terminal) of Upper arm
Sense C2E1
G2
Main E2
Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm .
Sense C1
VCE (terminal) of Lower arm
Sense E2
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Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Please use these terminals whenever measure spike voltage and on-state voltage .
2MBI900VXA-120P-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji’s products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other’s intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices• Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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