2sk2647-01mr N-channel Mos-fet Fap-iis Series 4ω

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2SK2647-01MR N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 ±30 4 109 40 150 -55 ~ +150 Unit V A A V A mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 800 3,5 Test conditions channel to air channel to case Min. Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 Max. 4,5 500 1,0 100 4,0 3 1,0 450 3,0 FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. Max. 62,5 3,125 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2647-01MR N-channel MOS-FET 800V 4Ω 4A FAP-IIS Series 40W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ 4 ID [A] Tch [°C] IF=f(VSD); 80µs pulse test; VGS=0V VDS [V] → 8 Starting Tch [°C] Allowable Power Dissipation vs. TC IF [A] ↑ Eas [mJ] ↑ 7 9 → VSD [V] ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] PD [W] Tc [°C] → → Safe operation area PD=f(Tc) 10 → Forward Characteristics of Reverse Diode Eas=f(starting Tch); VCC=80V; IAV=4A ↑ 6 → Avalanche Energy Derating C=f(VDS); VGS=0V; f=1MHz ↑ 3 Typical Drain-Source-On-State-Resistance vs. ID gfs [S] RDS(ON) [Ω] ↑ RDS(ON) [Ω] 1 ↑ C [F] ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C ↑ ID [A] ↑ VDS [V] Typical Transfer Characteristics RDS(on) = f(Tch); ID=2A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] →