Transcript
2SK3597-01 200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings (mm)
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current
Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C
Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation
ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C
Operating and storage temperature range
Tch Tstg
Foot Print Pattern Ratings 200 170 ±45 ±4.3 ** ±180 ±30 45 258.9 20 5 270 2.4 ** +150 -55 to +150
Unit V V A A A V A mJ kV/µs kV/µs W
Equivalent circuit schematic D : Drain
G : Gate
S1 : Source S2 : Source
°C °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C *1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = 200V *5 VGS=-30V = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc <
Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage
Symbol V(BR)DSS VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr
Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Min.
Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V
Typ.
200 3.0
5.0 25 250 100 66
Tch=25°C Tch=125°C
ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC=100V ID=30A VGS=10V L=205µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C
Max.
10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4
Units V V µA nA mΩ S pF
ns
nC
A V µs µC
Thermalcharacteristics Item
Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
Min.
Typ.
Max. 0.463 87.0 52.0
Units °C/W °C/W
1
2SK3597-01
FUJI POWER MOSFET
Characteristics
300
Allowable Power Dissipation PD=f(Tc)
Allowable Power Dissipation PD=f(Tc)
5
Surface mounted on 2
1000mm ,t=1.6mm FR-4 PCB 250
2
(Drain pad area : 500mm )
4 200
PD [W]
PD [W]
3 150
2
100
1
50
0
0 0
25
50
75
100
125
150
0
25
50
Tc [°C]
800
75
100
125
150
Tc [°C]
Typical Output Characteristics
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V
ID=f(VDS):80µs Pulse test,Tch=25°C 120 20V
700 IAS=18A
100 10V
600
8V IAS=27A
80
7.5V
IAS=45A
ID [A]
EAS [mJ]
500
400
7.0V
60
300
6.5V
40 200
6.0V 20
100
VGS=5.5V 0
0 0
25
50
75
100
125
0
150
2
4
6
8
10
12
VDS [V]
starting Tch [°C]
Typical Transfer Characteristic
Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 100
gfs [S]
ID[A]
10 10
1
1
0.1 0
1
2
3
4
5
VGS[V]
6
7
8
9
10
0.1 0.1
1
10
100
ID [A]
2
2SK3597-01
FUJI POWER MOSFET
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C
200
0.20
180
RDS(on) [ Ω ]
6.5V
160
7.0V
7.5V 8V 0.10
140
RDS(on) [ m Ω ]
VGS= 6.0V 5.5V
0.15
10V 20V
120 100 max.
80 60
typ.
0.05 40 20 0.00
0 0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A
Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25°C
7.0 14
6.5 6.0
12
5.5 max.
10
4.5 4.0
VGS [V]
VGS(th) [V]
5.0
3.5 3.0
min.
Vcc= 100V
8 6
2.5 2.0
4
1.5 1.0
2
0.5 0
0.0 -50
-25
0
25
50
75
100
125
0
150
10
20
30
Tch [°C]
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10
40
50
60
70
80
Qg [nC]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C
1
100
Ciss 0
IF [A]
10
C [nF]
10
Coss
10
-1
1
Crss
10
-2
10
-1
10
0
10
VDS [V]
1
10
2
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
3
2SK3597-01
FUJI POWER MOSFET
Typical Switching Characteristics vs. ID 10
3
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB
100 90
2
td(off)
t [ns]
10
Rth(ch-a) [°C/W]
tf
td(on)
80 70 60 50 40
10
1
30
tr
20 10 10
0
0
10
-1
10
0
10
1
10
0
2
10
2
10
1
10
0
1000
2000
3000
4000
5000
2
Drain Pad Area [mm ]
ID [A]
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
Single Pulse
10
-1
-2
10 -8 10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
Zth(ch-c) [°C/W]
tAV [sec]
10
1
10
0
10
-1
10
-2
10
-3
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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