Transcript
2SK3603-01MR 200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings (mm)
Features
TO-220F
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage
Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO
*6
Ratings 150 120 ±23 ±92 ±30 23 130.8 20 5 2.16 37 +150 -55 to +150 2
Unit V V A A V A mJ kV/µs kV/µs W
Equivalent circuit schematic Drain(D)
Gate(G) Source(S)
°C °C kVrms
*1 L=363µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C < < < *5 V GS =-30V *6 t=60sec f=60Hz *3 IF < -I D , -di/dt=50A/µs, Vcc BV DSS , Tch 150°C *4 V DS 150V = = = =
Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage
Symbol V(BR)DSS VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr
Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Min.
Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V
Typ.
150 3.0 Tch=25°C Tch=125°C
ID=8A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V
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RGS=10 Ω V CC =75V ID=16A VGS=10V L=363µH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/µs Tch=25°C
10 79 12 760 130 6 12 2.8 22 6.2 21 9 6
Max. 5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9
23 1.10 0.13 0.59
1.65
Units V V µA nA mΩ S pF
ns
nC
A V µs µC
Thermalcharacteristics Item Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol Rth(ch-c) Rth(ch-a)
Test Conditions channel to case channel to ambient
Min.
Typ.
Max. 3.378 58.0
Units °C/W °C/W
1
2SK3603-01MR
FUJI POWER MOSFET
Characteristics
50
Allowable Power Dissipation PD=f(Tc)
400
45
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=9A
350
40 300 35 250
EAS [mJ]
PD [W]
30 25 20
IAS=14A 200
IAS=23A
150
15 100 10 50
5 0
0 0
25
50
75
100
125
150
0
25
50
Tc [°C]
75
100
125
150
starting Tch [°C]
Typical Output Characteristics
Typical Transfer Characteristic
ID=f(VDS):80µs Pulse test,Tch=25°C 60
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
50 20V 10V
40
10
ID[A]
ID [A]
8V 7.5V
30
7.0V
1
20 6.5V 10
6.0V 0.1
VGS=5.5V 0 0
2
4
6
8
10
0
12
1
2
3
VDS [V]
4
5
6
7
8
9
10
VGS[V]
Typical Drain-Source on-state Resistance
Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.30
100
VGS= 5.5V
0.25
6.0V
6.5V
7.0V
7.5V
8V
gfs [S]
RDS(on) [ Ω ]
10
0.20 10V 0.15
20V
0.10
1
0.05
0.1 0.1
0.00 1
10
ID [A]
100
0
10
20
30
40
ID [A]
2
2SK3603-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A 7.0
300
6.5 6.0
250
5.5 max.
VGS(th) [V]
RDS(on) [ m Ω ]
5.0 200
150 max.
4.5 4.0 3.5 3.0
min.
2.5
100
2.0
typ.
1.5 50
1.0 0.5 0.0
0 -50
-25
0
25
50
75
100
125
-50
150
-25
0
25
Tch [°C]
50
75
100
125
150
Tch [°C]
Typical Gate Charge Characteristics
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
VGS=f(Qg):ID=16A, Tch=25°C 14
10
0
Ciss
12
10
-1
10
-2
Coss
C [nF]
VGS [V]
10
8
6
Vcc= 75V
4
Crss 2 0 0
10
20
30
10
40
-3
10
-1
10
0
10
Qg [nC]
1
10
2
VDS [V]
Typical Switching Characteristics vs. ID
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 3
100
10
10
10
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
tf
t [ns]
IF [A]
2
td(off) td(on) 1
10
1
tr
0.1 0.00
0
0.25
0.50
0.75
1.00
1.25
VSD [V]
1.50
1.75
2.00
10
-1
10
10
0
10
1
2
10
ID [A]
3
Avalanche Current I AV [A]
2SK3603-01MR
10
2
10
1
10
0
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V
Single Pulse
10
-1
-2
10 -8 10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
Zth(ch-c) [°C/W]
tAV [sec]
10
1
10
0
10
-1
10
-2
10
-3
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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