Transcript
Ordering number : EN7681B
2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG
http://onsemi.com
Features • •
ON-resistance RDS(on)1=20mΩ (typ.) 4V drive
•
Input capacitance Ciss=1780pF (typ.)
Specifications Absolute Maximum Ratings at Ta=25°C Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS VGSS
Gate-to-Source Voltage Drain Current (DC)
60
ID IDP
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
V
±20
V
30
A
120
A
2.0
W
Allowable Power Dissipation
PD
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS IAV
135
mJ
30
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=20V, L=200μH, IAV=30A (Fig.1) *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ) 7529-001
• Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection 2
15.87
6.68
3.3
2.54
A
3.23
15.8
2SK3703-1E
4.7
10.16 3.18
K3703
1
LOT No.
12.98
2.76 1.47 MAX
DETAIL-A
0.8 1
2
3
0.5 FRAME
2.54
2.54
Semiconductor Components Industries, LLC, 2013 July, 2013
( 1.0)
EMC
3
(0.84)
1 : Gate 2 : Drain 3 : Source TO-220F-3SG
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7
2SK3703 Electrical Characteristics at Ta=25°C Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=15A, VGS=4V
Output Capacitance
Coss
Reverse Transfer Capacitance
typ
Unit
max
60
VGS=±16V, VDS=0V VDS=10V, ID=1mA
RDS(on)1 Ciss
min
ID=1mA, VGS=0V VDS=60V, VGS=0V
VDS=10V, ID=15A ID=15A, VGS=10V
Input Capacitance
Ratings
Conditions
V 1
μA
±10
μA
1.2
2.6
13
22
V S
20
26
mΩ
28
40
mΩ
1780
pF
266
pF
Crss
197
pF
Turn-ON Delay Time
td(on)
16.5
ns
Rise Time
tr td(off)
110
ns
166
ns
Turn-OFF Delay Time Fall Time
VDS=20V, f=1MHz
See Fig.2
tf Qg
Total Gate Charge Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=30V, VGS=10V, ID=30A IS=30A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
nC
6.5
nC
11.5
nC
1.0
1.2
V
VDD=30V
VIN 10V 0V
≥50Ω
ID=15A RL=2Ω
VIN D
2SK3703 VDD
50Ω
ns
40
Fig.2 Switching Time Test Circuit
L
10V 0V
144
VOUT
PW=10μs D.C.≤1% G
2SK3703 P.G
50Ω
S
Ordering Information Device 2SK3703-1E
Package
Shipping
memo
TO-220F-3SG
50pcs./magazine
Pb Free
No.7681-2/7
2SK3703
35 30 25 20 15
VGS=3V
25 20 15
5 0 0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ
60
50
40
Tc=75°C 25°C --25°C
20
10 0 2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
5
Source Current, IS -- A
C 25° C ° -25 =C Tc 75°
7 5 3 2
3.5
4.0
4.5
5.0
IT05387
, 15A
I D=
30
=4V V GS
V
10 S=
VG 5A,
1 I D= 20
10
--25
0
25
50
75
100
125
150
IT05389
IS -- VSD VGS=0V
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
0.01 7 5 3 2 0.001
1.0 7 5 0.1
3.0
Case Temperature, Tc -- °C
7
10
40
5 3 2
2
2.5
50
0 --50
10
3
2.0
RDS(on) -- Tc
IT05388
| yfs | -- ID
100
1.5
60
ID=15A
30
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
70
0.5
IT05386
5°C 25° C --25° C
0.4
Tc= 7
0.2
25 °C
5 0
Drain-to-Source Voltage, VDS -- V
Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ
30
10
0
Forward Transfer Admittance, | yfs | -- S
35
Tc= 75 --25 °C °C
Drain Current, ID -- A
8V
40
10
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
3
5
0
Ciss, Coss, Crss -- pF
7 5
tr 3 2
1.2 IT05391
f=1MHz Ciss
2
tf
100
0.9
3
td(off)
2
0.6
Ciss, Coss, Crss -- VDS
5
VDD=30V VGS=10V
3
0.3
Diode Forward Voltage, VSD -- V
IT05390
SW Time -- ID
5
Switching Time, SW Time -- ns
Tc= --25 °C 75° C
45
4V
40
Drain Current, ID -- A
VDS=10V
6V
V 10
45
ID -- VGS
50
Tc=25°C
25° C
ID -- VDS
50
1000 7 5
Coss Crss
3 2
td(on) 100
10 0.1
7 2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
IT05392
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30 IT05393
No.7681-3/7
2SK3703 VGS -- Qg
10 9 8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
1000 7 5 3 2
VDS=30V ID=30A
7 6 5 4 3 2 1 0 0
5
10
15
20
25
30
35
Total Gate Charge, Qg -- nC
40
Operatuon in this area is limited by RDS(on).
1.5
1.0
0.5
op
Tc=25°C Single pulse 2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100 IT16832
PD -- Tc
35
2.0
1 10 0ms 0m era s tio n
s
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0 7 5 3 2
0μ s
1m
DC
10 7 5 3 2
10 μs
10
ID=30A
IT05394
0
30
25
20
15
10
5 0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT05397
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT05396
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=120A(PW≤10μs)
100 7 5 3 2
0.1 0.1
PD -- Ta
2.5
ASO
100
80
60
40
20
0 0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175 IT10478
No.7681-4/7
2SK3703 Magazine Specification
2SK3703-1E
No.7681-5/7
2SK3703 Outline Drawing 2SK3703-1E Mass (g) Unit 1.8 mm * For reference
No.7681-6/7
2SK3703
Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
No.7681-7/7
