Transcript
2SK3986-01MR FUJI POWER MOSFET Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm]
Features
TO-220F
High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage
Symbol V DS VDSX ID ID(puls] VGS IAR
Ratings 500 500 3.6 ±14.4 ±30 3.6
EAS
227.9 2.1 20 5 21 2.16 +150
EAR dV DS /dt dV/dt PD Tch Tstg VISO
-55 to +150 2
Unit V V A A V A
Remarks VGS=-30V
Note *1
Equivalent circuit schematic
mJ
Note *2
mJ kV/μs kV/μs W W °C °C kVrms
Note *3 VDS < = 500V Note *4 Tc=25°C Ta=25°C
Drain(D)
Gate(G) Source(S)
t=60sec, f=60Hz
Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < = 150°C = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch <
Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge
Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr
Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=1.8A VGS=10V
500 3.0 Tch=25°C Tch=125°C
ID=1.8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=1.8A VGS=10V
1.7
RGS=10 Ω VCC =250V ID=3.6A VGS=10V IF=3.6A VGS=0V Tch=25°C IF=3.6A VGS=0V -di/dt=100A/μs Tch=25°C
5.0 25 250 100 2.30
1.84 3.4 330 50 2.5 11 5.0 23 6.0 13 5.5 2.5 1.00 0.5 2.3
500 75 5.0 18 7.5 35 9.0 20 8.5 3.8 1.50
Typ.
Max.
V V μA nA Ω S pF
ns
nC
V μs μC
Thermalcharacteristics Item Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol Rth(ch-c) Rth(ch-a)
Test Conditions channel to case channel to ambient
Min.
5.952 58.0
Units °C/W °C/W
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2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
Characteristics
2
2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
3
2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
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