Transcript
30TPS...PbF High Voltage Series Vishay High Power Products
Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 (A)
TO-247AC
1 (K) (G) 3
PRODUCT SUMMARY VT at 20 A
< 1.3 V
ITSM
300 A
VRRM
800/1200 V
The 30TPS...PbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
Pb-free Available
RoHS* COMPLIANT
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV)
TEST CONDITIONS
VALUES
Sinusoidal waveform
UNITS
20 A
IRMS
30
VRRM/VDRM
800/1200
V
300
A
1.3
V
dV/dt
500
V/µs
dI/dt
150
A/µs
- 40 to 125
°C
VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V
VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V
IRRM/IDRM AT 125 °C mA
30TPS08PbF
800
900
30TPS12PbF
1200
1300
ITSM VT
20 A, TJ = 25 °C
TJ
VOLTAGE RATINGS PART NUMBER
10
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94386 Revision: 06-Jun-08
For technical questions, contact:
[email protected]
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30TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A
ABSOLUTE MAXIMUM RATINGS PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle non-repetitive surge current
ITSM
VALUES 20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
30
UNITS
A
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
I2√t
t = 0.1 to 10 ms, no voltage reapplied
4420
A2√s
VTM
20 A, TJ = 25 °C
1.3
V
12
mΩ
1.0
V
Maximum I2t for fusing
I2 t
Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance
TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave
rt
Threshold voltage
VT(TO)
Maximum reverse and direct leakage current
IRM/IDM
TJ = 125 °C TJ = 25 °C TJ = 125 °C
VR = Rated VRRM/VDRM
A2s
0.5 10
Maximum holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
100
Maximum latching current
IL
Anode supply = 6 V, resistive load
200
mA
Maximum rate of rise of off-state voltage
dV/dt
500
V/µs
Maximum rate of rise of turned-on current
dI/dt
150
A/µs
VALUES
UNITS
TRIGGERING PARAMETER
SYMBOL
Maximum peak gate power
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum average gate power
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = - 10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25 2.0
mA
VALUES
UNITS
SWITCHING PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
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TEST CONDITIONS TJ = 25 °C TJ = 125 °C
For technical questions, contact:
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0.9 4
µs
110
Document Number: 94386 Revision: 06-Jun-08
30TPS...PbF High Voltage Series Phase Control SCR, 20 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER
SYMBOL
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, junction to ambient
RthJA
Maximum thermal resistance, case to heatsink
RthCS
TEST CONDITIONS
Marking device
Document Number: 94386 Revision: 06-Jun-08
UNITS
- 40 to 125
°C
0.8 DC operation °C/W
40 Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.2 6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm (lbf · in)
Case style TO-247AC (JEDEC)
For technical questions, contact:
[email protected]
30TPS08 30TPS12
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30TPS...PbF High Voltage Series
30TPS.. Series R thJC (DC) = 0.8 °C/ W
120 Conduction Angle
110 30°
60° 90°
100
120° 180°
90 0
5
10
15
20
25
60
40 RMS Limit
Conduction Period
20 30TPS.. Series TJ = 125°C 0 0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
120
110
Conduction Period
100 30°
60°
90
90° 120°
180° DC
80 5
10
15
20
25
30
35
RMS Limit 30
Conduction Angle
30TPS.. Series TJ= 125°C
10 0 5
10
15
20
25
30
Peak Half Sine Wave On-state Current (A)
180° 120° 90° 60° 30°
20
220 200 180 160 140
30TPS.. Series
120 10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
60
40
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s 240 @50 Hz 0.0100 s 260
1
Fig. 2 - Current Rating Characteristics
50
280
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
DC 180° 120° 90° 60° 30°
Average On-state Current (A)
30TPS.. Series RthJC (DC) = 0.8 °C/ W
0
80
Fig. 1 - Current Rating Characteristics 130
0
Maximum Average On-state Power Loss (W)
130
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Vishay High Power Products Phase Control SCR, 20 A
300 280 260 240
Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Ma intained. Initial TJ= 125°C No Voltage Reapplied Rated VRRMReapplied
220 200 180 160 140
30TPS.. Series
120 0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact:
[email protected]
Document Number: 94386 Revision: 06-Jun-08
30TPS...PbF High Voltage Series Phase Control SCR, 20 A
Vishay High Power Products
Instantaneous On-state Current (A)
1000 TJ= 25°C TJ= 125°C 100
10
30TPS.. Series 1 0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/ W)
Fig. 7 - On-State Voltage Drop Characteristics 1
Steady State Value (DC Operation)
D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1
D = 0.08
Single Pulse 30TPS.. Series 0.01 0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics Rec tangular gate p ulse a )Rec ommend ed loa d line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommend ed load line for <= 30% rated di/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a ) (b )
VGD IGD 0.1 0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequency Limited by PG(AV)
30TPS.. Series 0.01
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 94386 Revision: 06-Jun-08
For technical questions, contact:
[email protected]
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30TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A ORDERING INFORMATION TABLE
Device code
30
T
P
S
12
PbF
1
2
3
4
5
6
1
-
Current rating (30 = 30 A)
2
-
Circuit configuration: T = Thyristor
3
-
Package: P = TO-247
4
-
Type of silicon: S = Standard recovery rectifier
5
-
6
-
Voltage code x 100 = VRRM
08 = 800 V 12 = 1200 V
None = Standard production PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions
http://www.vishay.com/doc?95223
Part marking information
http://www.vishay.com/doc?95226
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For technical questions, contact:
[email protected]
Document Number: 94386 Revision: 06-Jun-08
Outline Dimensions www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches A
A
(3)
(6) Ø P
E
B (2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A D2
Q 2xR (2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1 C
L A
See view B 2 x b2 3xb 0.10 M C A M
Planting
(4) E1 0.01 M D B M View A - A
C
2x e A1
b4
(b1, b3, b5)
Lead assignments
Base metal D DE
(c)
c1
E C
C
Diodes 1. - Anode/open 2. - Cathode 3. - Anode
(b, b2, b4) (4) Section C - C, D - D, E - E
SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1
MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 -
INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 -
View B
NOTES
SYMBOL
3 4
D2 E E1 e FK L L1 N P P1 Q R S
MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC
INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC
NOTES
3
Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223 1 For technical questions within your region:
[email protected],
[email protected],
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Document Number: 91000 Revision: 11-Mar-11
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