Transcript
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBJ 40N140 IXBJ 40N160
VCES IC25 VCE(sat) tfi
= = = =
1400/1600 V 33 A 7.1 V 40 ns
N-Channel, Enhancement Mode C G
E
Symbol
Test Conditions
Maximum Ratings 40N140
40N160
TO-268
VCES
TJ = 25°C to 150°C
1400
1600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1400
1600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C,
33
A
IC90
TC = 90°C
20
A
ICM
TC = 25°C, 1 ms
40
A
SSOA (RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W; VCE = 0.8 VCES Clamped inductive load, L = 100 mH
ICM = 40
A
PC
TC = 25°C
350
W
-55 ... +150
°C
TJ
G C E
G = Gate C = Collector E = Emitter TAB = Collector
Features l l
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
l
1.15/10 Nm/lb.in.
Weight
6
g
C (TAB)
l
l
Leaded TO-268 package High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) Monolithic construction - high blocking voltage capability - very fast turn-off characteristics MOS Gate turn-on - drive simplicity Intrinsic diode
Applications Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
l l l
BVCES
IC
= 1 mA, VGE = 0 V
VGE(th)
IC
ICES
VCE = 0.8 • VCES VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
40N140 40N160
= 2 mA, VCE = VGE
1400 1600 4
8
TJ = 25°C TJ = 125°C
= IC90, VGE = 15 V
6.2 TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V V V
400 3
mA mA
± 500
nA
7.1 7.8
V V
l l
l l
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts
Advantages l l
Space savings High power density
98662 (10/99)
1-4
IXBJ 40N140 IXBJ 40N160 Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
C ies Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
C res Qg td(on) t ri td(off) tfi
IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 960 V, RG = 22 W
3300
pF
220
pF
30
pF
130
nC
200
ns
60
ns
270
ns
40
ns
RthCK
0.25
Reverse Conduction
VF
All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
0.35 K/W
RthJC
Symbol
Leaded TO-268
K/W
Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions
IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
min.
typ.
max.
2.5
5
V
Dim.
Inches Min Max
Millimeters Min Max
A A1 b b2
.193 .106 .045 .075
.201 .114 .057 .083
4.90 2.70 1.15 1.90
5.10 2.90 1.45 2.10
C C2
.016 .057
.026 .063
.040 1.45
.065 1.60
D D1 E E1 e
.543 .551 .488 .500 .624 .632 .524 .535 .215 BSC
H
1.365
1.395 34.67 35.43
L L1 L2
.780 .079 .039
.800 .091 .045
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15
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IXBJ 40N140 IXBJ 40N160 70
70
VGE = 17V
TJ = 25°C
VGE = 17V
TJ = 125°C
60
60 15V
13V
IC - Amperes
IC - Amperes
15V
50 40 30 20
50
13V
40 30 20 10
10
0
0 0
2
4
6
8
10
12
14
16
0
18
2
4
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Output Characteristics
Fig. 2 High Temperature Output Chacteristics
70
70 VCE = 20V
60
60
50
50
IF - Amperes
IC - Amperes
6
40 TJ = 25°C
TJ = 125°C
30
40 30 TJ = 25°C
20
20
10
10 0 0.0
0 5
6
7
8
9
10
11
12
13
0.5
1.0
VGE - Volts
2.5
3.0
3.5
4.0
Fig. 4 Forward voltage drop of the Intrinsic Diode 100
VCE = 600V IC = 20A
14
2.0
VF - Volts
Fig. 3 Transfer Characteristics
16
1.5
TJ = 125°C
ICM - Amperes
VGE - Volts
12 10 8 6
10 TJ = 125°C VCEK < VCES IXBH 40N140 IXBH 40N160
1
4 2 0 0
20
40
60
80
100
120
QG - nanocoulombs
Fig. 5 Gate Charge Characteristics
© 2000 IXYS All rights reserved
140
0.1 0
400
800
1200
1600
VCE - Volts
Fig. 6 Reverse Based Safe Operating Area
3-4
IXBJ 40N140 IXBJ 40N160 50
VCE = 960V VGE = 15V
RG = 22W TJ = 125°C
2
tfi - nanoseconds
Eoff - milijoules
3
1
VCE = 960V VGE = 15V
40 RG = 22W
TJ = 125°C
30 20 10
0
0 0
10
20
30
40
0
10
IC - Amperes
td(off) - nanoseconds
Eoff - milijoules
40
Fig. 8 Collector Current Fall Time 400
VCE = 960V VGE = 15V IC = 20A TJ = 125°C
2
30
IC - Amperes
Fig. 7 Turn off Energy vs. Collector Current 3
20
1
0
VCE = 960V VGE = 15V IC = 20A TJ = 125°C
300
200
100
0 0
10
20
30
40
0
RG - Ohms
10
20
30
40
RG - Ohms
Fig. 9 Turn-off Energy vs. Gate Resistance
Fig.10 Turn Off Delay Time vs. Gate Resistance
1
ZthJC - K/W
0.1
0.01 Single Pulse
0.001
0.0001 0.00001
IXBH40
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig.11 Transient Thermal Impedance
© 2000 IXYS All rights reserved
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