4n60

Transcript

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220F FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 4N60L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 4N60-TA3-T 4N60-TF3-T Order Number Lead Free Plating 4N60L-TA3-T 4N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 4N60L-TA3-T (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-061,E 4N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current - (Note 1) SYMBOL VDSS VGSS IAR RATINGS UNIT 600 V ±30 V 4.4 A TC = 25°C 4.0 A ID Continuous Drain Current TC = 100°C 2.8 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 16 A Avalanche Energy, Single Pulsed (Note 2) EAS 260 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TC = 25°C) PD 106 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC θCS Junction-to-Ambient Junction-to-Case Case-to-Sink MIN TYP MAX 62.5 3 0.5 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate-Source Leakage Current IDSS Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IGSS VGS = 0 V, ID = 250 µA VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 600 10 100 100 -100 △BVDSS/△TJ ID = 250 µA, Referenced to 25°C VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.2 A VDS = 50 V, ID = 2.2 A (Note 4) VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 300V, ID = 4.0 A, RG = 25Ω (Note 4, 5) VDS= 480V,ID= 4.0A, VGS= 10 V (Note 4, 5) 0.6 2.0 V µA µA nA nA V/℃ 4.0 2.5 V Ω S 520 70 8 670 90 11 pF pF pF 13 45 25 35 15 3.4 7.1 35 100 60 80 20 ns ns ns ns nC nC nC 4.0 2 of 8 QW-R502-061,E 4N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.4 A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 1.5 1.4 V 4.4 A 17.6 A ns µC 3 of 8 QW-R502-061,E 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-061,E 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-061,E 4N60 Power MOSFET Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 -100 -50 0 50 100 150 200 Junction Temperature, TJ (℃) On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 Note: 1. VGS=10V 2. ID=4A 1.0 0.5 0.0 -100 -50 Maximum Drain Current vs. Case Temperature 5 Drain Current, I D (A) Drain Current, ID (A) Operation in This Area is Limited by R DS(on ) 100 µs 1ms 10ms 1 0.1 1 Notes: 1. T J=25 ℃ 2. TJ=150℃ 3. Single Pulse 10 DC 100 4 3 2 1 0 1000 25 Drain-Source Voltage, VDS (V) On-State Characteristics 1 0.1 10 5.0V Notes: 1. 250µs Pulse Test 2. TC=25℃ 0.1 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 50 75 100 125 Case Temperature, TC (℃) Transfer Characteristics Drain Current, I D (A) Drain Current, ID (A) 10 V GS Top : 10V 9V 8V 7V 6V 5.5V 5V Bottorm :5.0V 50 100 150 200 Junction Temperature, TJ (℃) Maximum Safe Operating Area 10 0 25℃ 1 0.1 150℃ Notes: 1. VDS =50V 2. 250 µs Pulse Test 4 6 8 10 2 Gate-Source Voltage, VGS (V) 6 of 8 QW-R502-061,E 4N60 Power MOSFET On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 VGS =20V 4 VGS=10V 3 2 1 0 Note: TJ=25℃ 0 6 8 10 12 2 4 Drain Current, I D (A) On State Current vs. Allowable Case Temperature Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) TYPICAL CHARACTERISTICS(Cont.) 10 150℃ 25℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) Capacitance (pF) 1000 12 Ciss=Cgs +Cgd (Cds=shorted ) Coss=Cds +Cgd Crs s=Cgd Ciss 800 600 Coss Notes: 1. V GS =0V 2. f = 1MHz 400 200 0 0.1 Crss Gate-Source Voltage, VGS (V) 1200 Gate Charge Characteristics 10 8 VDS=120V 6 4 2 Note: I D=4A 0 1 0 10 5 10 15 20 25 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) Transient Thermal Response Curve Power Dissipation 120 1 100 80 PD (w) Thermal Response, θJC (t) VDS=300V VDS=480V 0.1 40 Notes : 1. θJ C (t) = 1.18℃/ W Max. 2. Duty Factor , D=t 1/t2 3. TJ M-TC=P DM×θJC (t) 20 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 60 0 0 20 40 60 80 100 120 140 160 T C (°C) 7 of 8 QW-R502-061,E 4N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-061,E