Transcript
PD-94605F
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597260 JANSR2N7549T1 200V, P-CHANNEL REF: MIL-PRF-19500/713
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TECHNOLOGY
Product Summary Part Number IRHMS597260 IRHMS593260
Radiation Level RDS(on) 100K Rads (Si) 0.103Ω 300K Rads (Si) 0.103Ω
ID QPL Part Number -30A JANSR2N7549T1 -30A JANSF2N7549T1
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-254AA
Features: n n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC =100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Units -30 -19 -120 208 1.67 ±20 332 -30 20.8 -4.1 -55 to 150 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)
A W W/°C V mJ A mJ V/ns °C g
For footnotes refer to the last page
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1 07/27/15
IRHMS597260, JANSR2N7549T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter
Min
BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 23 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
Typ Max Units —
—
-0.25
—
—
Test Conditions VGS = 0V, ID = -1.0mA
V V/°C
Reference to 25°C, ID = -1.0mA
0.103
Ω
VGS = -12V, ID = -19A
— — — —
-4.0 — -10 -25
V S
— — — — — — — — — 4.0
-100 100 180 75 50 35 100 100 100 —
nC
VDS = VGS, ID = -1.0mA VDS =-15V, IDS = -19A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -30A VDS = -100V
ns
VDD = -100V, ID = -30A VGS =-12V, RG = 1.20Ω
µA
nA
nH Measured from Drain lead (6mm /.25in.from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
C iss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
7170 920 86
— — —
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD t rr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
-30 -120 -5.0 300 6.0
Test Conditions
A V ns µC
Tj = 25°C, IS = -30A, VGS = 0V Tj = 25°C, IF = -30A, di/dt ≤ -100A/µs VDD ≤ -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units — — —
— 0.21 —
0.6 — 48
Test Conditions
°C/W Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS597260, JANSR2N7549T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage
100K Rads(Si)1 Min Max
300KRads(Si)2 Min Max
Units
-200 -2.0 — — — —
— -4.0 -100 100 -10 0.103
-200 -2.0 — — — —
V
—
-5.0
—
— -5.0 -100 100 -10 0.103
µA Ω
-5.0
V
Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS = -160V, VGS = 0V VGS = -12V, ID = -19A
nA
VGS = 0V, IS = -30A
1. Part number IRHMS597260, JANSR2N7549T1 2. Part number IRHMS593260, JANSF2N7549T1
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area LET 2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm) 35 ± 7.5%
VDS (V) @VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
5V
10V
15V
20V
-200
-200
-200
-200
-75
38 ± 5%
270 ± 7.5%
61 ± 5%
330 ± 7.5%
31 ± 7.5%
-200
-200
-200
-50
-
84 ± 5%
350 ± 10%
28 ± 7.5%
-200
-200
-200
-35
-
Bias VDS (V)
-250 -200
LET=38 ± 5%
-150
LET=61 ± 5%
-100
LET=84 ± 5%
-50 0 0
5
10
15
20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHMS597260, JANSR2N7549T1
Pre-Irradiation
1000
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
100
100
-5.0V
10
20µs PULSE WIDTH Tj = 25°C 1
-5.0V
10
20µs PULSE WIDTH Tj = 150°C 1
0.1
1
10
100
0.1
-V DS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current ( Α)
2.5
T J = 25°C 100 T J = 150°C
VDS = -50V 20µs PULSE 15 WIDTH 10 5.5
6
6.5
7
7.5
10
100
Fig 2. Typical Output Characteristics
1000
5
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
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-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
1000
-32A ID = -30A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -12V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
12000
16
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED
ID= -30A -32A
8000
-V GS, Gate-to-Source Voltage (V)
Crss = Cgd Coss = Cds + Cgd
10000
C, Capacitance (pF)
IRHMS597260, JANSR2N7549T1
Ciss
6000
4000
Coss
2000
VDS= -160V VDS= -100V VDS= -40V
12
8
4
Crss 0 1
10
0
100
0
20
-VDS, Drain-to-Source Voltage (V)
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
-I D, Drain-to-Source Current (A)
1000 -I SD , Reverse Drain Current ( Α)
40
100 T J = 150°C 10 T J = 25°C 1
VGS = 0V
0.1 0.5
1.5
2.5
3.5
4.5
5.5
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100µs 10 1ms
0.1 6.5
10ms
1
DC
Tc = 25°C Tj = 150°C Single Pulse 1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRHMS597260, JANSR2N7549T1
Pre-Irradiation
30
RD
V DS
-I D, Drain Current (A)
VGS
D.U.T.
RG
+
20
V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
T C , Case Temperature (°C) 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms 1
Thermal Response ( Z thJC )
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01
0.01
SINGLE PULSE ( THERMAL RESPONSE ) 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHMS597260, JANSR2N7549T1
L
VDS
-
D.U.T
RG
VGS -20V
+
IAS
tp
VVDD DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit I AS
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
800
ID -13.4A -19A BOTTOM -30A TOP
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V 12V
.2µF .3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHMS597260, JANSR2N7549T1
Pre-Irradiation
Footnotes: Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25°C, L = 0.73mH Peak IL = -30A, VGS = -12V ISD ≤ -30A, di/dt ≤ -220A/µs, VDD ≤ -200V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Omic TO-254AA 0.12 [.005]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
6.60 [.260] 6.32 [.249]
A
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665] 1
C
2
2X
B
3
14.48 [.570] 12.95 [.510]
3X
3.81 [.150]
13.84 [.545] 13.59 [.535]
1.27 [.050] 1.02 [.040]
0.84 [.033] MAX.
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150] B A
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2015
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