Transcript
PD - 94034
IRF5NJZ48 55V, N-CHANNEL
HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRF5NJZ48
RDS(on) 0.016Ω
BVDSS
55V
ID 22A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features: n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
Units 22* 22* 88 75 0.60 ±20 160 22 7.5 3.6 -55 to 150
A W W/°C
V mJ A mJ V/ns o
C
300 (for 5 s) 1.0
g
* Current is limited by package For footnotes refer to the last page
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IRF5NJZ48
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
55
—
—
V
VGS = 0V, ID = 250µA
—
0.056
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.016
Ω
2.0 22 — —
— — — —
4.0 — 25 250
V S( )
VGS = 10V, ID = 22A ➃ VDS = VGS, ID = 250µA VDS = 25V, IDS = 22A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 22A VDS = 44V
Ω
Parameter BVDSS
µA
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 4.0
100 -100 101 19 41 23 141 60 98 —
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1900 620 270
— — —
nA nC
VDD = 28V, ID = 22A, RG = 5.1Ω
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀
— —
— —
22* 88
A
VSD t rr Q RR
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — —
— — —
1.3 104 210
V nS nC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 22A, VGS = 0V ➃ Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 30V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter RthJC
Junction-to-Case
Min Typ Max Units —
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5NJZ48
100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
4.5V 10
20µs PULSE WIDTH T = 25 C 1
10
10
2.5
TJ = 150 ° C
15 V DS = 25V 20µs PULSE WIDTH
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
7.0
1
10
100
Fig 2. Typical Output Characteristics
100
6.0
°
J
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH T = 150 C
1 0.1
100
VDS , Drain-to-Source Voltage (V)
10 4.0
4.5V
°
J
1 0.1
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
TOP
ID = 22A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = 10V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5NJZ48
VGS = Ciss = Crss = Coss =
2500
Ciss 2000
1500
C oss
1000
C rss
500
20
ID = 22A
VDS = 44V VDS = 27V VDS = 11V
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0 1
10
0
100
20
40
60
80
100
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
100
ID , Drain-to-Source Current (A)
TJ = 150 ° C
OPERATION IN THIS AREA LIMITED BY R DS (on)
100
10
TJ = 25 ° C 1
0.1 0.2
V GS = 0 V 0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
16
0
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
3000
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
VGS , Gate-to-Source Voltage (V)
3500
1.8
10 1ms Tc = 25°C Tj = 150°C Single Pulse
10ms
1 1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5NJZ48
60
LIMITED BY PACKAGE VGS
50
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
40
10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
30
20
Fig 10a. Switching Time Test Circuit VDS
10
90% 0 25
50
75
100
125
150
TC , Case Temperature ( ° C) 10% VGS td(on)
Fig 9. Maximum Drain Current Vs. Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50 0.20
0.10
P DM
0.05 0.1
0.02 0.01
0.01 0.00001
t1
SINGLE PULSE (THERMAL RESPONSE)
t2
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5NJZ48
15V
L
VDS
D .U .T.
RG
IA S
10V 20V
D R IV E R
+ - VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
300
TOP
250
BOTTOM
200
150
100
50
0 25
V (B R )D S S
ID 10A 14A 22A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Current Regulator Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF .3µF
10V QGS
QGD
+ V - DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5NJZ48
Footnotes: Repetitive Rating; Pulse width limited by
ISD ≤ 22A, di/dt ≤ 220 A/µs,
maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L=0.66mH Peak IAS = 22A, RG= 25Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00
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