Transcript
VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
6500 V 350 A 550 A 4500 A 1.2 V 2.3 mΩ Ω
Phase Control Thyristor
5STP 03X6500 Doc. No. 5SYA1003-04 Jan. 02
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Patented free-floating silicon technology
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Low on-state and switching losses
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Designed for traction, energy and industrial applications
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Optimum power handling capability
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Interdigitated amplifying gate
Blocking Maximum rated values
1)
Symbol
Conditions
5STP 03X6500
5STP 03X6200
5STP 03X5800
VDSM, VRSM
f = 5 Hz, tp = 10ms
6500 V
6200 V
5800 V
VDRM, VRRM
f = 50 Hz, tp = 10ms
5600 V
5300 V
4900 V
VRSM1
tp = 5ms, single pulse
7000 V
6700 V
6300 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
1000 V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Forwarde leakage current
IDSM
VDSM, Tj = 125°C
150
mA
Reverse leakage current
IRSM
VRSM, Tj = 125°C
150
mA
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min 8
typ 10
max
Unit
12
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
Weight
m
Surface creepage distance
DS
38
mm
Air strike distance
Da
21
mm
1)
min
typ 0.4
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
Unit kg
5STP 03X6500
On-state Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state current
ITAVM
RMS on-state current
ITRMS
Max. peak non-repetitive surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive surge current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, Tc = 70°C
tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V
max
Unit
350
A
550
A
4500
A
101
kA2s
4850
A
98
kA2s
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 1000 A, Tj= 125°C
3.5
V
Threshold voltage
VT0
IT = 300 A - 900 A, Tj= 125°C
1.2
V
Slope resistance
rT
Tj = 125°C
2.3
mΩ
Holding current
IH
Tj = 25°C
80
mA
Tj = 125°C
60
mA
Tj = 25°C
500
mA
Tj = 125°C
200
mA
Latching current
Switching Maximum rated values
IL
min
typ
max
Unit
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
di/dtcrit
Critical rate of rise of onstate current
di/dtcrit
Circuit-commutated turn-off tq time
min
typ
Cont. Tj = 125°C, ITRM = 1000 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 1000 A, VR = 200 V, diT/dt = -1 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
max
Unit
100
A/µs
1000
A/µs
700
µs
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
Tj = 125°C, ITRM = 1000 A, VR = 200 V, diT/dt = -1 A/µs
Delay time
td
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
min
typ
900
max
Unit
2000
µAs
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Jan. 02
page 2 of 6
5STP 03X6500
Triggering Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
Peak forward gate voltage
VFGM
12
V
Peak forward gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
Gate power loss
PG
3
W
Average gate power loss
PGAV
For DC gate current
max
Unit
see Fig. 9
Characteristic values
Parameter
Symbol Conditions
Gate trigger voltage
VGT
Tj = 25°C
2.6
V
Gate trigger current
IGT
Tj = 25°C
400
mA
Gate non-trigger voltage
VGD
VD = 0.4 x VDRM, Tvjmax = 125°C
0.3
V
Gate non-trigger current
IGD
VD = 0.4 x VDRM, Tvjmax = 125°C
10
mA
Thermal Maximum rated values
min
typ
max
Unit
1)
Parameter
Symbol Conditions
Operating junction temperature range
Tj
min
Storage temperature range Tstg
typ
-40
max
Unit
125
°C
140
°C
Characteristic values
Parameter
Symbol Conditions
max
Unit
Double side cooled
45
K/kW
Rth(j-c)A
Anode side cooled
85
K/kW
Rth(j-c)C
Cathode side cooled
95
K/kW
Double side cooled
7.5
K/kW
Single side cooled
15
K/kW
Thermal resistance junction Rth(j-c) to case
Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
min
typ
Analytical function for transient thermal impedance:
n
ZthJC(t) = å Ri(1 - e -t/τ i ) i =1
i
1
2
3
4
Ri(K/kW)
26.07
12.16
3.37
3.1
τi(s)
0.6439
0.0812
0.0161
0.0075 Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Jan. 02
page 3 of 6
5STP 03X6500
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Jan. 02
page 4 of 6
5STP 03X6500
Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 %
IGM
IGM IGon diG/dt tr tp(IGM)
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20µs
diG/dt
IGon
10 % tr
t tp (IGM)
tp (IGon)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state current.
Fig. 11 Peak reverse recovery current vs. decay rate of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Jan. 02
page 5 of 6
5STP 03X6500
Fig. 12 Device Outline Drawing.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet
+41 (0)58 586 1419 +41 (0)58 586 1306
[email protected] www.abbsem.com
Doc. No. 5SYA1003-04 Jan. 02
