635nm 5mw 40 Oc Reliable Operation

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AlGaInP Visible Laser Diode ADL-66502TL ★ 660nm 50mW 60 oC Reliable High Power Operation • Features 1. Highly reliable / COD free 2. Higher power 3. High efficiency • Applications 1. High power Laser modules 2. Industrial laser markers / measuring instruments 3. Medical applications • Absolute maximum ratings Parameter Light output power Reverse voltage (LD) Reverse voltage (PD) Forward current (PD) Case temperature Storage temperature Symbol Condition PO CW VRL VRD IFD TC TS - Rating 55 2 30 10 -10~+60 -40~+85 Unit mW V V mA o C o C • Electrical and optical characteristics (Tc=25 oC) Parameter Peak wavelength Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Parallel FFP deviation angle Perpendicular FFP deviation angle Emission point accuracy * * * * * * Symbol λ Ith Iop Vop η Im θ// θ⊥ Δθ// Δθ⊥ ΔxΔyΔz Min. 645 30 2.0 0.7 0.05 7 17 -2 -3 -80 Typ. 660 40 90 2.5 1.0 0.15 9 19 0 0 0 Max. 665 50 120 3.0 1.4 0.5 12 22 +2 +3 +80 Unit nm mA mA V mW/mA mA deg deg deg deg um Conditions Po=50mW CW Kink free Po=35-45mW Po=50mW, VRD=5V Po=50mW Precautions Do not operate the device above maximum ratings. Doing so may cause unexpected and permanent damage to the device. Take precautions to avoid electrostatic discharge and/or momentary power spikes. A change in the characteristics of the laser or premature failure may result. Proper heat sinking of the device assures stability and lifetime. Always ensure that maximum operating temperatures are not exceeded. Observing visible or invisible laser beams with the human eye directly, or indirectly, can cause permanent damage. Use a camera to observe the laser. No laser device should be used in any application or situation where life or property is at risk in event of device failure. Specifications are subject to change without notice. Ensure that you have the latest specification by contacting us prior to purchase or use of the product. * For reference only. Contents above are subject to change without notice. AlGaInP Visible Laser Diode 55 ADL-66502TL 2.6 o 25 30 40 50 60 C o 60 C o 25 C 50 2.4 45 40 2.2 Voltage(V) Power(mW) 35 30 25 20 2.0 1.8 15 10 1.6 5 0 1.4 0 20 40 60 80 100 120 140 0 20 40 Currnet(mA) 60 80 100 120 Current(mA) 0.15 130 120 0.12 0.09 100 Iop(mA) Monitor current(mA) 110 0.06 90 80 0.03 70 0.00 60 0 10 20 30 40 50 680 Wavelength(nm) 670 660 650 640 630 30 35 40 45 30 35 40 45 50 Tempereature( C) 690 25 25 o Power(mW) 50 55 60 o Temperature( C) * For reference only. Contents above are subject to change without notice. 55 60