Transcript
http://www.fujielectric.com/products/semiconductor/
6MBI225V-120-50
IGBT Modules
IGBT MODULE (V series) 1200V / 225A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items
Inverter
Collector-Emitter voltage Gate-Emitter voltage
Collector current
Symbols
Conditions
VCES VGES Ic Icp Ic pulse -Ic -Ic pulse PC Tj Tjop TC Tstg
Continuous 1ms 1ms 1 device
Collector power dissipation Junction temperature Operation temperature (under switching conditions) Case temperature Storage temperature between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) -
AC : 1min.
Tc=25°C Tc=100°C
Maximum ratings 1200 ±20 300 225 450 225 450 1070 175 150 125 -40 to +125
Units V V
A
W °C
2500
VAC
3.5 4.5
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
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7377b MARCH 2015
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 225mA
VCE (sat) (terminal)
VGE = 15V IC = 225A
VCE (sat) (chip)
VGE = 15V IC = 225A
RG(int) Cies ton tr tr (i) toff tf
VCE = 10V, VGE = 0V, f = 1MHz
VF (terminal)
VGE = 0V IF = 225A
VF (chip)
VGE = 0V IF = 225A
Reverse recovery time
trr
Resistance
R
B value
B
IF = 225A T = 25°C T = 100°C T = 25 / 50°C
Items
Symbols
Conditions
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VCC = 600V IC = 225A VGE = ±15V RG = 1.6Ω LS=80nH
Forward on voltage
Thermistor
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 3.33 18 550 180 120 1050 110 2.05 2.50 2.20 2.15 1.70 2.15 1.85 1.80 200 5000 465 495 520 3305 3375 3450
Units mA nA V
V
Ω nF
nsec
V
nsec Ω K
Thermal resistance characteristics
Inverter IGBT Inverter FWD with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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Characteristics min. typ. max. 0.140 0.190 0.0167 -
Units °C/W
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
500
15V Collector current: Ic [A]
VGE =20V
400
12V 300
200
10V
100
VGE = 20V
400
12V
300 200
10V
100 8V
8V 0
0 0
1
2
3
4
0
5
1
Collector-Emitter voltage: VCE [V]
2
10
125°C Collector-Emitter Voltage: Vce [V]
Collector Current: Ic [A]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip
400 Tj=25°C 150°C 200
100
0
8
6
4 Ic=450A Ic=225A Ic=112A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter Voltage: VCE [V]
15
20
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE = 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.) Vcc=600V, Ic=225A, Tj= 25°C
100 Gate-Emitter voltage: VGE [V]
20
Cies 10
Cres 1
Coes
0.1 0
10
20
25
Gate-Emitter Voltage: VGE [V]
[INVERTER]
Gate Capacitance: Cies, Coes, Cres [nF] ***
5
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) VG E = 15V / chip
300
4
Collector-Emitter voltage: VCE [V]
[INVERTER]
500
3
15
800
VCE
600
10
400
5
200
0
0 -200
-5 -10
-400
VGE
-600
-15 -20 -2000
30
1000
-800 -1000
0
1000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
3
-1000 2000
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
500
15V
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE =±15V, Rg=1.6Ω, Tj=25°C
Vcc=600V, VGE =±15V, Rg=1.6Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff
1000
ton tr 100
tf
10 0
100
200
300
400
Tj=125oC Tj=150oC toff
1000
ton tr tf
100
10 0
500
100
400
500
[INVERTER]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
Vcc=600V, VGE =±15V, Rg=1.6Ω, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse]
10000
Switching time: ton, tr, toff, tf [nsec]
300
Collector current: Ic [A]
Collector current: Ic [A]
Tj=125oC Tj=150oC toff
1000
ton tr
100
10
tf
0.1
1
10
100
80 Tj=125oC Tj=150oC
60
Eoff
40 Err 20 Eon 0 0
100
200
300
400
500
Collector current: Ic [A]
Gate resistance: Rg [Ω]
[INVERTER]
[INVERTER] Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=225A, VGE =±15V, Tj=125°C, 150°C
+VGE=15V, -VGE ≤15V, Rg≥1.6Ω, Tj=150°C
150
600 Tj=125oC Tj=150oC
Eon Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
200
100 Eoff 50
400
Notice) Please refer to Page 7. There is definision of VCE.
200
Err 0
0 0
1
10
0
100
500
1000
Collector-Emitter voltage: VCE [V] (Main Terminals)
Gate resistance: Rg [Ω]
4
1500
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=1.6 Ω, Tj=25°C
[INVERTER] Forward Current vs. Forward Voltage (typ.) chip 500
1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Forward current: If [A]
Tj=25°C 400 300 200 125°C
150°C
100 0
Irr
trr
100
10 0
1
2
3
0
100
Forward on voltage: Vf [V]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=1.6 Ω, Tj=125°C, 150°C
400
500
1 Thermal resistanse: Rth(j-c) [°C/W] ***
Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
300
Transient Thermal Resistance (max.)
1000 Irr
trr 100 Tj=125o C Tj=150o C
10 0
100
200
300
400
500
Forward current: If [A]
FWD
0.1
IGBT
0.01 τ Rth [°C/W]
0.001 0.001
[sec] IGBT FWD
0.00232 0.03007 0.05976 0.07082 0.01502 0.03807 0.05379 0.03313 0.02038 0.05167 0.07299 0.04496
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.) Tj=150°C
Temperature characteristic (typ.) 100
500
Reverse recovery current: Irr [A]
Resistance : R [kΩ]
200
Forward current: If [A]
10
1
400 Pmax=225kW 300
200
0
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
Notice) Please refer to Page 7. There is definision of VCE.
100
0
500
1000
Collector-Emitter voltage: VCE [V] (Main terminals)
Temperature [°C]
5
1500
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings(Unit:mm)
2,4,6 Sence C1,3,5
G1,3,5
7,8,9,10 11,12
Switching characteristics of VCE is defined
VCE(terminal) of Upper arm (U,V,W)
between Sense C1,3,5 and Sense E1,3,5 for Upper arm(U,V,W) and Sense E1,3,5 and Sense E2,4,6 for Lower arm(X,Y,Z) .
Sence E1,3,5
Please use these terminals whenever
G2,4,6
measure spike voltage.
VCE(terminal) of Lower arm (X,Y,Z)
Weight: 950g (typ.) Sence E2,4,6 1,3,5
Equivalent Circuit
[ Inverter ]
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[ Thermistor ]
6MBI225V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of switching characteristics 2,4,6 Sence C1,3,5
G1,3,5
7,8,9,10 11,12
VCE(terminal) of Upper arm (U,V,W)
Switching characteristics of VCE is defined between Sense C1,3,5 and Sense E1,3,5 for Upper arm(U,V,W) and Sense E1,3,5 and Sense E2,4,6 for Lower arm(X,Y,Z) .
Sence E1,3,5
Please use these terminals whenever
G2,4,6
VCE(terminal) of Lower arm (X,Y,Z)
measure spike voltage.
Sence E2,4,6 1,3,5
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications.
[ Inverter ] your reference only. No right[orThermistor 2.All applications described in this Catalog exemplify the use of Fuji's products for license, either]express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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