6mbi300v-120-50

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http://www.fujielectric.com/products/semiconductor/ 6MBI300V-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 300A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols Conditions VCES VGES IC Icp IC pulse -IC -IC pulse Pc Tj Tjop TC Tstg Continuous 1ms 1ms 1 device Collector power dissipation Junction temperature Operation temperature (under switching conditions) Case temperature Storage temperature between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) - AC : 1min. Tc=25°C Tc=100°C Maximum ratings 1200 ±20 450 300 600 300 600 1600 175 150 125 -40 to +125 Units V V A W °C 2500 VAC 3.5 4.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) 1 7378b MARCH 2015 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 300mA VCE (sat) (terminal) VGE = 15V IC = 300A VCE (sat) (chip) VGE = 15V IC = 300A RG(int) Cies ton tr tr (i) toff tf VCE = 10V, VGE = 0V, f = 1MHz Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VCC = 600V IC = 300A VGE = ±15V RG = 0.93Ω LS =80nH VF (terminal) VGE = 0V IF = 300A VF (chip) VGE = 0V IF = 300A Reverse recovery time trr Resistance R B value B IF = 300A T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Forward on voltage Thermistor Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.50 2.55 1.75 2.20 2.05 2.10 2.50 27 550 180 120 1050 110 2.15 2.60 2.30 2.25 1.70 2.15 1.85 1.80 200 5000 465 495 520 3305 3375 3450 Units mA nA V V Ω nF nsec V nsec Ω K Thermal resistance characteristics Inverter IGBT Inverter FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.094 0.150 0.0167 - Units °C/W 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 700 700 15V 600 12V 500 Collector current: Ic [A] Vge=20V 400 300 10V 200 100 12V 500 400 300 10V 200 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: Vce [V] 1 2 3 4 [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 700 10 Collector-Emitter Voltage: Vce [V] 125°C 600 500 Tj=25°C 400 150°C 300 200 100 0 8 6 4 Ic=600A Ic=300A Ic=150A 2 0 0 1 2 3 4 5 5 Collector-Emitter Voltage: Vce [V] 10 15 20 [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Dynamic Gate Charge (typ.) 20 Gate-Emitter voltage: VGE [V] 100 Cies 10 Cres Coes 1 0 10 20 25 Gate-Emitter Voltage: Vge [V] [INVERTER] Gate Capacitance: Cies, Coes, Cres [nF] *** 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector Current: Ic [A] 15V Vge= 20V 15 600 400 5 200 0 0 -200 -5 -10 -400 VGE -600 -15 -800 -1500 0 1500 Gate charge: Qg [nC] Collector-Emitter voltage: Vce [V] 3 1000 800 VCE 10 -20 -3000 30 Vcc=600V, Ic=300A, Tj= 25°C -1000 3000 Collector-Emitter voltage: VCE [V] Collector current: Ic [A] 600 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] [INVERTER] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr 100 tf 10 0 100 200 300 400 500 600 Tj=125oC Tj=150oC toff 1000 ton tr tf 100 10 0 700 100 300 400 500 600 [INVERTER] [INVERTER] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C Tj=125oC Tj=150oC Vcc=600 V Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 toff ton tr 1000 tf 100 10 0.1 1 700 Collector current: Ic [A] Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] 200 10 100 Tj=125oC Tj=150oC 80 Eoff 60 40 Err 20 Eon 0 0 100 100 200 300 400 500 600 700 Collector current: Ic [A] Gate resistance: Rg [Ω] [INVERTER] Reverse bias safe operating area (max.) Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C +Vge=15V, -Vge≤15V, Rg≥0.93Ω, Tj=150°C 150 800 Tj=125oC Tj=150oC Eon Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] [INVERTER] Switching loss vs. Gate resistance (typ.) 100 Eoff 50 600 400 Notice) Please refer to Page 7. There is definision of VCE. 200 Err 0 0 0 1 10 100 0 Gate resistance: Rg [Ω] 500 1000 Collector-Emitter voltage: VCE [V] (Main Terminals) 4 1500 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C Forward Current vs. Forward Voltage (typ.) chip 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 700 Forward current: If [A] 600 Tj=25°C 500 400 300 125°C 200 100 150°C Irr trr 100 10 0 0 1 2 0 3 100 300 400 500 600 700 Forward current: If [A] Forward on voltage: Vf [V] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C Transient Thermal Resistance (max.) 1000 1 Thermal resistanse: Rth(j-c) [°C/W] *** Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 200 Irr trr 100 Tj=125oC Tj=150oC 10 0 100 200 300 400 500 600 FWD 0.1 IGBT 0.01 τ Rth [°C/W] 0.001 0.001 700 Forward current: If [A] [sec] IGBT FWD 0.00232 0.03007 0.05976 0.07082 0.01008 0.02556 0.03611 0.02224 0.01609 0.04079 0.05763 0.03549 0.01 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] FWD safe operating area (max.) Tj=150°C Temperature characteristic (typ.) 100 700 Reverse recovery current: Irr [A] Resistance : R [kΩ] 600 10 1 500 400 300 200 -60 -40 -20 0 20 40 60 80 100 120 140 160 Notice) Please refer to Page 7. There is definision of VCE. 100 0 0.1 Pmax=300kW 0 500 1000 Collector-Emitter voltage: VCE [V] (Main terminals) Temperature [°C] 5 1500 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings(Unit:mm) Weight: 950g (typ.) Equivalent Circuit [ Inverter ] 6 [ Thermistor ] 6MBI300V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Definition of switching characteristics 2,4,6 Sence C1,3,5 G1,3,5 VCE(terminal) of Upper arm (U,V,W) Switching characteristics of VCE is defined between Sense C1,3,5 and Sense E1,3,5 for Upper arm(U,V,W) and Sense E1,3,5 and Sense E2,4,6 for Lower arm(X,Y,Z) . 7,8,9,10 11,12 Sence E1,3,5 Please use these terminals whenever G2,4,6 VCE(terminal) of Lower arm (X,Y,Z) measure spike voltage. Sence E2,4,6 1,3,5 WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved. 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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7 Technical Information IGBT Modules Please refer to URLs below for futher information about products, application manuals and technical documents. 关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。 本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。 FUJI ELECTRIC Power Semiconductor WEB site 日本 www.fujielectric.co.jp/products/semiconductor/ Global www.fujielectric.com/products/semiconductor/ 中国 www.fujielectric.com.cn/products/semiconductor/ Europe www.fujielectric-europe.com/components/semiconductors/ North America www.americas.fujielectric.com/components/semiconductors/ Information 日本 1 半導体総合カタログ 2 製品情報 3 アプリケーションマニュアル 4 技術資料 5 マウンティングインストラクション 6 IGBT 損失シミュレーションソフト 7 AT-NPC 3-Level 損失シュミレーションソフト 8 富士電機技報 9 製品のお問い合わせ 10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/catalog/ www.fujielectric.co.jp/products/semiconductor/model/ www.fujielectric.co.jp/products/semiconductor/model/igbt/application/ www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/ www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.co.jp/products/semiconductor/journal/ www.fujielectric.co.jp/products/semiconductor/contact/ www.fujielectric.co.jp/products/semiconductor/discontinued/ Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Technical Documents 5 Mounting Instructions 6 IGBT Loss Simulation Software 7 AT-NPC 3-Level Loss Simulation Software 8 Fuji Electric Journal 9 Contact 10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/catalog/ www.fujielectric.com/products/semiconductor/model/ www.fujielectric.com/products/semiconductor/model/igbt/application/ www.fujielectric.com/products/semiconductor/model/igbt/technical/ www.fujielectric.com/products/semiconductor/model/igbt/mounting/ www.fujielectric.com/products/semiconductor/model/igbt/simulation/ www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com/products/semiconductor/journal/ www.fujielectric.com/products/semiconductor/contact/ www.fujielectric.com/products/semiconductor/discontinued/ 中国 1 半导体综合目录 2 产品信息 3 应用手册 4 技术资料 5 安装说明书 6 IGBT 损耗模拟软件 7 AT-NPC 3-Level 损耗模拟软件 8 富士电机技报 9 产品咨询 10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/catalog/ www.fujielectric.com.cn/products/semiconductor/model/ www.fujielectric.com.cn/products/semiconductor/model/igbt/application/ www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/ www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com.cn/products/semiconductor/journal/ www.fujielectric.com.cn/products/semiconductor/contact/ www.fujielectric.com.cn/products/semiconductor/discontinued/ 2015-10