Transcript
http://www.fujielectric.com/products/semiconductor/
7MBR100VZ120-50
IGBT Modules
IGBT MODULE (V series) 1200V / 100A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items
Symbols
Inverter
Collector-Emitter voltage Gate-Emitter voltage Collector current
Converter
Brake
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
Conditions
VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature Storage temperature
Tc Tstg
Continuous 1ms
Tc=100°C Tc=80°C
1ms 1 device
Continuous 1ms 1 device
Tc=80°C Tc=80°C
50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter
Isolation voltage
between terminal and copper base (*1) Viso between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Maximum ratings 1200 ±20 100 200 100 200 520 1200 ±20 75 150 385 1200 1600 100 520 1352 175 150 150 150 125 -40 to +125
Units V V A W V V A W V V A A A2 s
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
1371b MARCH 2014
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 100mA
VCE (sat) (terminal)
VGE = 15V IC = 100A
VCE (sat) (chip)
VGE = 15V IC = 100A
Rg (int) Cies ton tr tr (i) toff tf
VCE = 10V, VGE = 0V, f = 1MHz
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VF (terminal)
VCC = 600V IC = 100A VGE = +15 / -15V RG = 1.6Ω
IF = 100A
Forward on voltage
Brake
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Units mA nA V
V
Ω nF
µs
V
VF (chip)
IF = 100A
trr
IF = 100A
Zero gate voltage collector current
ICES
VGE = 0V VCE = 1200V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V VGE = +20 / -20V
-
-
200
nA
VCE (sat) (terminal)
VGE = 15V IC = 75A
465 3305
2.25 2.60 2.65 1.85 2.20 2.25 10 0.39 0.09 0.53 0.06 2.00 1.50 5000 495 3375
2.70 2.30 1.20 0.60 1.00 0.30 1.00 2.45 1.0 520 3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.25 2.70 2.55 2.60 1.75 2.20 2.05 2.10 7.5 9.1 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.20 2.65 2.35 2.30 1.70 2.15 1.85 1.80 0.35
VCE (sat) (chip)
VGE = 15V IC = 75A
Rg (int) ton tr toff tf IRRM
-
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
VCE = 600V IC = 75A VGE = +15 / -15V RG = 2.2Ω VR = 1200V
Forward on voltage
VFM (chip)
Reverse current
IRRM
Resistance
R
B value
B
VR = 1600V T = 25°C T = 100°C T = 25 / 50°C
Symbols
Conditions
IF = 100A
terminal chip
µs
V
Ω µs mA V mA Ω K
Thermal resistance characteristics Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.29 0.44 0.39 0.43 0.05 -
Units
°C/W
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip 200
200 15V
VGE=20V
12V
Collector current: IC [A]
Collector current: IC [A]
VGE=20V 150
10V
100
50
15V 12V
150
10V
100
50 8V
8V 0
0 0
1
3
4
0
5
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C
Tj= 25oC / chip 8
Collector - Emitter voltage: VCE [V]
Tj=150°C
150 Tj=125°C 100
50
0
6
4
Ic=200A Ic=100A Ic=50A
2
0 0
1
2
3
4
5
5
Collector current: IC [A]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
100.0 Cies 10.0
Cres Coes
0.1
0.0 0
10
20
15
20
25
[ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
1.0
10
Gate - Emitter voltage: VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
1
Collector-Emitter voltage: VCE [V]
200
Collector current: IC [A]
2
VCE
0
-1200
30
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
3
1200
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 125°C
toff ton tr
100
tf
10 0
100
200
10000
1000
ton
0
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
200
300
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.6Ω
toff ton tr
100 tf
10 10.0
100.0
30
Eoff(150°C) Eon(150°C) Eoff(125°C) Eon(125°C)
20
10
Err(150°C) Err(125°C)
0 0
100
200
300
Collector current: IC [A]
Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj = 150°C
20
250
15
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
100
Collector current: IC [A]
10000
1.0
tf
10
300
[ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
0.1
tr
100
Collector current: IC [A]
1000
toff
Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C)
10
Err(150°C) Err(125°C)
5
200 150 RBSOA (Repetitive pulse)
100 50 0
0 0
1
10
0
100
400
800
1200
Collector-Emitter voltage : VCE [V] (Main terminals)
Gate resistance : Rg [Ω]
4
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward current : IF [A]
200
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=1.6Ω Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
[ Inverter ] Forward current vs. forward on voltage (typ.) chip Tj=25°C
150
100
Tj=150°C Tj=125°C
50
0 0
1
2
3
4
1000
Irr(150°C) Irr(125°C) trr(150°C) trr(125°C)
100
10
5
0
100
Forward on voltage : VF [V]
200
300
Forward current : IF [A]
[ Converter ] Forward current vs. forward on voltage (typ.) chip 200
Forward current : IF [A]
Tj=25ºC
Tj=125ºC
150
100
50
0
0
1
2
3
4
Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 100
1.00 FWD[Inverter] Conv. Diode
IGBT[Brake]
IGBT[Inverter]
0.10
Zth =
4
∑r n =1
n τn rn [°C/W]
0.01 0.001
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
[sec] IGBT FWD B-IGBT Conv
0.010
1 0.0023 0.03111 0.04719 0.04183 0.04612
2 0.0301 0.07886 0.11966 0.10606 0.11694
n
t − τ ⋅ 1 − e n
3 0.0598 0.11141 0.16904 0.14983 0.16520
0.100
4 0.0708 0.06862 0.10411 0.09228 0.10174
10
1
0.1
1.000
-60
Pulse width : Pw [sec]
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip
150
VGE=20V
150
15V
VGE=20V
15V
Collector current: IC [A]
Collector current: IC [A]
12V 100 10V 50
12V
100
10V 50 8V
8V 0
0 0
1
2
3
4
0
5
Collector-Emitter voltage: VCE[V]
4
5
Tj= 25oC / chip 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
3
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=150°C
100
Tj=125°C
50
0
6
4
Ic=150A Ic=75A Ic=38A
2
0 0
1
2
3
4
5
5
10
VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
100.0
Cies
1.0
Cres Coes
0.1 0
10
20
20
25
[ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25°C
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.)
10.0
15
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE[V]
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 150
1
30
VCE
0
-800
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
6
800
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings (Unit: mm) shows theoretical dimension. ( ) shows reference dimension.
Weight: 310g(typ.)
Equivalent Circuit
[ Converter ]
[ Brake]
7
[ Inverter ]
[ Thermistor ]
7MBR100VZ120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
8
Technical Information
IGBT Modules
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