Transcript
http://www.fujielectric.com/products/semiconductor/
7MBR25VM120-50
IGBT Modules
IGBT MODULE (V series) 1200V / 25A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items
Symbols
Inverter
Collector-Emitter voltage Gate-Emitter voltage Collector current
Converter
Brake
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
Conditions
VCES VGES IC ICp -IC -IC pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature Storage temperature
TC Tstg
Continuous 1ms
TC =100°C TC =80°C
1ms 1 device
Continuous 1ms 1 device
TC =80°C TC =80°C
50Hz/60Hz, sine wave 10ms, Tj =150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter
Isolation voltage
between terminal and copper base (*1) Viso between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Maximum ratings 1200 ±20 25 50 25 50 170 1200 ±20 25 50 170 1200 1600 25 155 120 175 150 150 150 125 -40 to +125
Units V V A W V V A W V V A A A2 s
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
1255c MARCH 2014
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 25mA
VCE (sat) (terminal)
VGE = 15V IC = 25A
VCE (sat) (chip)
VGE = 15V IC = 25A
Rg(int) Cies ton tr tr (i) toff tf
VCE = 10V, VGE = 0V, f = 1MHz
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VF (terminal)
VCC = 600V IC = 25A VGE = +15 / -15V RG = 39Ω Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
IF = 25A
Forward on voltage
Brake
Units mA nA V
V
Ω nF
µs
V
VF (chip)
IF = 25A
trr
IF = 25A
Zero gate voltage collector current
ICES
VGE = 0V VCE = 1200V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V VGE = +20 / -20V
-
-
200
nA
VCE (sat) (terminal)
VGE = 15V IC = 25A
465 3305
2.10 2.45 2.50 1.85 2.20 2.25 0 0.39 0.09 0.53 0.06 1.65 1.40 5000 495 3375
2.55 2.30 1.20 0.60 1.00 0.30 1.00 2.10 1.0 520 3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter
Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.10 2.55 2.45 2.50 1.85 2.30 2.20 2.25 0 2.1 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 1.95 2.40 2.10 2.05 1.70 2.15 1.85 1.80 0.35
VCE (sat) (chip)
VGE = 15V IC = 25A
Rg(int) ton tr toff tf IRRM
-
Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C
VCE = 600V IC = 25A VGE = +15 / -15V RG = 39Ω VR = 1200V terminal chip
Forward on voltage
VFM (chip)
Reverse current
IRRM
Resistance
R
B value
B
VR = 1600V T = 25°C T = 100°C T = 25 / 50°C
Symbols
Conditions
IF = 25A
µs
V
Ω µs mA V mA Ω K
Thermal resistance characteristics Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 0.89 1.06 0.89 0.97 0.05 -
Units
°C/W
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 oC / chip
Tj= 150 oC / chip 50
50 15V
VGE =20V
12V
40
Collector current: IC [A]
Collector current:
[A]
VGE =20V
30 10V 20 10
8V
0
12V
40
30 10V
20
10
8V
0 0
1
2
3
4
5
0
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE =15V / chip
2
3
4
5
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25 oC / chip 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
50
Collector current: I C [A]
1
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Tj=150°C
40 Tj=125°C
30 20
10
0
6
4
IC=50A IC=25A IC=13A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE [V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
10.0 Cies
1.0
Cres Coes
0.0 0
10
20
20
25
[ Inverter ] Dynamic gate charge (typ.) VCC=600V, IC=25A,Tj= 25°C
VGE =0V, f= 1MHz, Tj= 25 oC
0.1
15
Gate - Emitter voltage: VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
15V
VCE
0
-300
30
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: QG [nC]
3
300
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=39Ω, Tj= 150°C
[ Inverter ] Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=39Ω, Tj= 125°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff ton tr
100
tf
10 0
20
40
1000
ton
tf
10
60
0
[ Inverter ] Switching time vs. gate resistance (typ.) VCC=600V, IC=25A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
40
1000 toff ton tr tf
10 100
6
Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C)
5 4 3
Err(150°C) Err(125°C)
2 1 0 0
25
50
75
Collector current: IC [A]
[ Inverter ] Switching loss vs. gate resistance (typ.) VCC=600V, IC=25A, VGE=±15V
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 39Ω ,Tj = 150°C
5
75
Collector current: IC [A]
Eon(150°C)
4
Eon(125°C)
3
Eoff(150°C) Eoff(125°C)
2 Err(150°C) Err(125°C)
1
50
100
1000
Gate resistance : RG [Ω]
4
RBSOA (Repetitive pulse)
25
0
0 10
60
7
Gate resistance : RG [Ω]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
20
Collector current: IC [A]
[ Inverter ] a Switching loss vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=39Ω
10000
10
tr
100
Collector current: IC [A]
100
toff
0
400
800
1200
Collector-Emitter voltage : VCE [V] (Main terminals)
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Forward current vs. forward on voltage (typ.) chip
1000
Tj=25°C
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
50
[ Inverter ] Reverse recovery characteristics (typ.) VCC=600V, VGE=±15V, RG=39Ω
40 30 Tj=150°C 20 Tj=125°C 10 0 0
1
2
3
4
trr(150°C) trr(125°C)
100
Irr(150°C) Irr(125°C) 10
1 0
5
25
Forward on voltage : VF [V]
50
75
Forward current : IF [A]
[ Converter ] Forward current vs. forward on voltage (typ.) chip
Forward current : IF [A]
50
Tj=25°C
Tj=125°C C
40
30 20
10
0 0
1
2
3
4
Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.)
Transient thermal resistance (max.) 100 Zth
4 n 1
t
rn
1 e
n
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
10.00
FWD[Inverter]
1.00
IGBT[Inverter] IGBT[Brake] Conv. Diode
0.10
0.01 0.001
n τn rn [°C/W]
[sec] IGBT FWD B-IGBT Conv
0.010
1 0.0023 0.09546 0.11370 0.09546 0.10404
2 0.0301 0.24203 0.28826 0.24203 0.26379
3 0.0598 0.34192 0.40723 0.34192 0.37265
0.100
4 0.0708 0.21059 0.25081 0.21059 0.22952
10
1
0.1
1.000
-60
Pulse width : PW [sec]
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 oC / chip
50
VGE =20V
15V
VGE =20V
15V
12V
40
Collector current: IC [A]
Collector current: IC [A]
50
Tj= 150 oC / chip
30 10V 20 10
40 12V 30 10V
20
10
8V
8V 0
0 0
1
2
3
4
5
0
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
4
5
Tj= 25 oC / chip 8
Tj=25°C
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
3
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=150°C
40 Tj=125°C
30 20
10
0
6
4
IC=50A IC=25A IC=13A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE [V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
10.0 Cies
1.0
Cres Coes
0.0 0
10
20
20
25
[ Brake ] Dynamic gate charge (typ.) VCC=600V, IC=25A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
0.1
15
Gate - Emitter voltage: VGE [V]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
50
1
30
VCE
0
-300
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: QG [nC]
6
300
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings (Unit : mm)
(
shows theoretical dimension. ) shows reference dimension.
Section A-A Weight: 200g(typ.)
Equivalent Circuit [ Converter ]
[ Brake]
[ Inverter ]
7
[ Thermistor ]
7MBR25VM120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
8
Technical Information
IGBT Modules
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