Transcript
http://www.fujielectric.com/products/semiconductor/
7MBR30VKA060-50
IGBT Modules
IGBT MODULE (V series) 600V / 30A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items
Symbols
Inverter
Collector-Emitter voltage Gate-Emitter voltage Collector current
Converter
Brake
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive)
Conditions
VCES VGES Ic Icp -Ic -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t
Junction temperature
Tj
Operating junciton temperature (under switching conditions)
Tjop
Case temperature Storage temperature
TC Tstg
Continuous 1ms
TC =100°C TC =80°C
1ms 1 device
Continuous 1ms 1 device
TC =80°C TC =80°C
50Hz/60Hz, sine wave 10ms, Tj =150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter
Isolation voltage
between terminal and copper base (*1) Viso between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M4
-
Maximum ratings 600 ±20 30 60 30 60 125 600 ±20 30 60 125 600 800 30 360 660 175 150 150 150 125 -40 to +125
Units V V A W V V A W V V A A A2 s
˚C
2500
VAC
1.7
Nm
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 1.3-1.7 Nm (M4)
1
1539 NOVEMBER 2013
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
Conditions
ICES IGES VGE (th)
VGE = 0V, VCE = 600V VCE = 0V, VGE = ±20V VCE = 20V, IC = 30mA
VCE (sat) (terminal)
VGE = 15V IC = 30A
VCE (sat) (chip)
VGE = 15V IC = 30A
Rg(int) Cies ton tr tr (i) toff tf
-
Inverter
Collector-Emitter saturation voltage
Internal gate resistance Input capacitance Turn-on time Turn-off time
VF (terminal)
VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V IC = 30A VGE = +15 / -15V RG = 15Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
IF = 30A
Forward on voltage
Brake
Units mA nA V
V
Ω nF
μs
V
VF (chip)
IF = 30A
trr
IF = 30A
Zero gate voltage collector current
ICES
VGE = 0V VCE = 600V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V VGE = +20 / -20V
-
-
200
nA
VCE (sat) (terminal)
VGE = 15V IC = 30A
465 3305
2.05 2.40 2.50 1.70 2.05 2.15 0 0.08 0.06 0.14 0.02 1.50 1.15 5000 495 3375
2.45 2.10 1.20 0.60 1.20 0.45 1.00 1.95 1.0 520 3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.05 2.45 2.40 2.50 1.70 2.10 2.05 2.15 0 1.6 0.08 1.20 0.06 0.60 0.02 0.14 1.20 0.02 0.45 2.35 2.75 2.40 2.40 2.00 2.40 2.05 2.05 0.35
VCE (sat) (chip)
VGE = 15V IC = 30A
Rg(int) ton tr toff tf IRRM
-
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
VCE = 300V IC = 30A VGE = +15 / -15V RG = 15Ω VR = 600V terminal chip
Forward on voltage
VFM
IF = 30A
Reverse current
IRRM
Resistance
R
B value
B
VR = 800V T = 25°C T = 100°C T = 25 / 50°C
Symbols
Conditions
μs
V
Ω μs mA V mA Ω K
Thermal resistance characteristics Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics min. typ. max. 1.24 1.78 1.24 1.35 0.05 -
Units
˚C/W
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip VGE=20V
60
15V
12V
Collector current: IC [A]
50 40 30
10V
20 10
12V 40 30
2
3
4
10V
20
8V
0 1
0
5
0
Collector-Emitter voltage: VCE[V]
2
3
4
5
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8
o
Tj=150 C
Tj=25oC
50
Collector - Emitter voltage: VCE [V]
60
Collector current: IC [A]
1
Collector-Emitter voltage: VCE[V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
Tj=125oC
40 30 20 10 0
6
4
Ic=60A Ic=30A Ic=15A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE[V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
10.00
Cies 1.00
Coes Cres
0.01 0
10
20
20
25
[ Inverter ] Dynamic gate charge (typ.) Vcc=300V， Ic=30A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
0.10
15
Gate - Emitter voltage: VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
15V
10
8V 0
VGE=20V
50
Collector current: IC [A]
60
Tj= 150oC / chip
VCE VGE
0
-300
30
Collector - Emitter voltage: VCE [V]
0
Gate charge: Qg [nC]
3
300
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V，VGE=±15V，Rg=15Ω，Tj= 150°C
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V，VGE=±15V，Rg=15Ω，Tj= 125°C
toff 100
ton tr tf
10 0
25
50
1000
toff
100
ton tr
tf 10
75
0
Collector current: IC [A]
1000
toff
100
tr ton tf 10 1
10
100
1000
75
1.5 Eoff(150oC) Eoff(125oC) 1.0
Err(150oC) Err(125oC)
0.5
Eon(150oC) Eon(125oC) 0.0 0
20
40
60
80
Collector current: IC [A]
Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V，Ic=30A，VGE=±15V
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15,-VGE <= 15V, RG >= 15Ω ,Tj = 150°C
3.0
75 Eon(150oC) Eon(125oC)
2.5 2.0 1.5
o
Eoff(150 C)
1.0
Eoff(125oC
0.5
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
50
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V，VGE=±15V，Rg=15Ω Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V，Ic=30A，VGE=±15V，Tj= 125°C
25
Collector current: IC [A]
Err(150oC) Err(125oC)
0.0 1
10
100
60 45 RBSOA (Repetitive pulse)
30 15 0 0
1000
200
400
600
Collector-Emitter voltage : VCE [V]
Gate resistance : Rg [Ω]
(Main terminals)
4
800
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V，VGE=±15V，Rg=15Ω
[ Inverter ] Forward current vs. forward on voltage (typ.) chip Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
60 Tj=25oC
50 40 30 20 o Tj=150 C
10
Tj=125oC
0 0
1
2
3
100 trr(150ooC) trr(125 C) Irr(150oC) Irr(125oC)
10
1
4
0
25
Forward on voltage : VF [V]
50
Forward current : IF [A]
[ Converter ] Forward current vs. forward on voltage (typ.) chip 60
Forward current : IF [A]
50 40 30 Tj=125oC
20
Tj=25oC
10 0 0.0
0.5
1.0
1.5
2.0
Forward on voltage : VFM [V]
10.00 4
Zth = ∑ rn ∙ 1 − e
−
[ Thermistor ] Temperature characteristic (typ.) 100
t
τn
n =1
FWD[Inverter]
1.00
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
Conv. Diode IGBT[Inverter, Brake]
0.10
n
τn rn
[°C/W]
0.01 0.001
[sec] IGBT FWD B-IGBT Conv
1
2
3
4
0.0001
0.0021
0.0133
0.1247
0.07978
0.12429
0.89819
0.13615
0.11457
0.17848
1.28984
0.19552
0.07978
0.12429
0.89819
0.13615
0.08720
0.13585
0.98174
0.14881
0.010
0.100
10
1
0.1
1.000
Pulse width : Pw [sec]
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
75
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip 60.00
60.00 15V
Collector current: IC [A]
VGE=20V
12V
50.00 40.00 30.00
10V 20.00 10.00
12V
40.00 30.00
10V
20.00 10.00
8V
0.00
8V
0.00 0
1
2
3
4
5
0
Collector-Emitter voltage: VCE[V]
2
3
4
5
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8
Tj=25oC
Collector - Emitter voltage: VCE [V]
60 o
Tj=150 C
50
Collector current: IC [A]
1
Collector-Emitter voltage: VCE[V]
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
Tj=125oC
40 30 20 10 0
6
4
Ic=60A Ic=30A Ic=15A
2
0 0
1
2
3
4
5
5
10
Collector-Emitter voltage: VCE[V]
Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div]
10.00 Cies
1.00
Coes Cres
0.01 0
10
20
20
25
[ Brake ] Dynamic gate charge (typ.) Vcc=300V， Ic=30A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
0.10
15
Gate - Emitter voltage: VGE [V]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
15V
50.00
Collector current: IC [A]
VGE=20V
VCE
0
-300
30
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
6
300
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline drawing (Unit : mm)
Weight: 25g(typ.)
Equivalent circuit [ Converter ]
[ Brake]
[ Inverter ]
7
[ Thermistor ]
7MBR30VKA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of November 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
8
