7mbr50vm120-50

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http://www.fujielectric.com/products/semiconductor/ 7MBR50VM120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature Tc Tstg Continuous 1ms Tc=100°C Tc=80°C 1ms 1 device Continuous 1ms 1 device Tc=80°C Tc=80°C 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 1200 ±20 50 100 50 100 280 1200 ±20 35 70 210 1200 1600 50 360 648 175 150 150 150 125 -40 to +125 Units V V A W V V A W V V A A A2 s °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 1257c MARCH 2014 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 50mA VCE (sat) (terminal) VGE = 15V IC = 50A VCE (sat) (chip) VGE = 15V IC = 50A Rg(int) Cies ton tr tr (i) toff tf VCE = 10V, VGE = 0V, f = 1MHz Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VF (terminal) VCC = 600V IC = 50A VGE = +15 / -15V RG = 15Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IF = 50A Forward on voltage Brake Units mA nA V V Ω nF µs V VF (chip) IF = 50A trr IF = 50A Zero gate voltage collector current ICES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V IC = 35A 465 3305 2.10 2.45 2.50 1.85 2.20 2.25 0 0.39 0.09 0.53 0.06 1.70 1.35 5000 495 3375 2.55 2.30 1.20 0.60 1.00 0.30 1.00 2.15 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 4 4.2 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.25 2.70 2.50 2.45 1.90 2.35 2.15 2.10 0.35 VCE (sat) (chip) VGE = 15V IC = 35A Rg(int) ton tr toff tf IRRM - Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 600V IC = 35A VGE = +15 / -15V RG = 27Ω VR = 1200V terminal chip Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 1600V T = 25°C T = 100°C T = 25 / 50°C Symbols Conditions IF = 50A µs V Ω µs mA V mA Ω K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.54 0.91 0.72 0.54 0.05 - Units °C/W 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 100 100 15V VGE=20V 12V 75 50 10V 25 15V 12V Collector current: IC [A] Collector current: IC [A] VGE=20V 75 50 10V 25 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip Collector - Emitter voltage: VCE [V] 8 Tj=25°C Collector current: IC [A] 2 Collector-Emitter voltage: VCE[V] 100 Tj=150°C 75 Tj=125°C 50 25 0 6 4 Ic=100A Ic=50A Ic=25A 2 0 0 1 2 3 4 5 5 10 Collector current: IC [A] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres Coes 0.0 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0.1 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 1 30 VCE VGE 0 -600 Collector - Emitter voltage: VCE [V] 0 Gate charge: Qg [nC] 3 600 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω, Tj=150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω, Tj=125°C toff ton tr 100 tf 10 0 25 50 75 100 10000 1000 ton tf 10 125 0 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj=125°C 10000 toff ton tr 100 tf 10 10 100 25 50 75 100 Collector current: IC [A] 15 10 Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 5 Err(150°C) Err(125°C) 0 0 25 50 75 100 125 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, Rg >=15Ω, Tj = 150°C 10 125 Collector current: IC [A] Eon(150°C) Eon(125°C) 6 Eoff(150°C) Eoff(125°C) 4 Err(150°C) Err(125°C) 2 100 75 RBSOA (Repetitive pulse) 50 25 0 0 10 150 Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V 8 125 [ Inverter ] a Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω Gate resistance : Rg [Ω] Switching loss : Eon, Eoff, Err [mJ/pulse ] tr 100 Collector current: IC [A] 1000 toff 0 100 400 800 1200 Collector-Emitter voltage : VCE[V] (Main terminals) Gate resistance : Rg [Ω] 4 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=15Ω [ Inverter ] Forward current vs. forward on voltage (typ.) chip 80 Tj=25°C 60 40 Tj=150°C Tj=125°C 20 0 0 1 2 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 100 3 trr(150°C) trr(125°C) 100 Irr(150°C) Irr(125°C) 10 4 0 25 Forward on voltage : VF [V] 50 75 100 125 150 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 100 Tj=125°C C Tj=25°C 75 50 25 0 0 1 2 3 4 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance (max.) 100 1.00 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] 10.00 FWD[Inverter] IGBT[Brake] IGBT[Inverter] Conv. Diode 0.10 0.01 0.001 n τn rn [°C/W] [sec] IGBT FWD B-IGBT Conv 0.010 1 0.0023 0.05792 0.09761 0.07723 0.05792 2 0.0301 0.14685 0.24747 0.19580 0.14685 3 0.0598 0.20746 0.34960 0.27661 0.20746 0.100 4 0.0708 0.12777 0.21532 0.17036 0.12777 10 1 0.1 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Pulse width : Pw [sec] 5 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 70 VGE=20V 15V Collector current: IC [A] 60 12V 50 40 10V 30 20 10 VGE=20V 50 12V 40 10V 30 20 8V 10 8V 0 0 0 1 2 3 4 5 0 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 3 4 5 Tj= 25oC / chip 8 Tj=25°C Tj=150°C 60 Collector current: IC [A] 2 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector - Emitter voltage: VCE [V] 70 1 Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V] 50 Tj=125°C 40 30 20 10 0 6 4 Ic=70A Ic=35A Ic=18A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres Coes 0.0 0 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0.1 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 60 Collector current: IC [A] 70 Tj= 150oC / chip 30 VCE VGE 0 -300 Collector - Emitter voltage: VCE [V] 0 Gate charge: Qg [nC] 6 300 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawing (Unit:mm) ( shows theoretical dimension. ) shows reference dimension. Section A-A Weight: 200g(typ.) Equivalent Circuit [ Converter ] [ Brake] [ Inverter ] 7 [ Thermistor ] 7MBR50VM120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A  ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T  he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8 Technical Information IGBT Modules Please refer to URLs below for futher information about products, application manuals and technical documents. 关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。 本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。 FUJI ELECTRIC Power Semiconductor WEB site 日本 www.fujielectric.co.jp/products/semiconductor/ Global www.fujielectric.com/products/semiconductor/ 中国 www.fujielectric.com.cn/products/semiconductor/ Europe www.fujielectric-europe.com/components/semiconductors/ North America www.americas.fujielectric.com/components/semiconductors/ Information 日本 1 半導体総合カタログ 2 製品情報 3 アプリケーションマニュアル 4 技術資料 5 マウンティングインストラクション 6 IGBT 損失シミュレーションソフト 7 AT-NPC 3-Level 損失シュミレーションソフト 8 富士電機技報 9 製品のお問い合わせ 10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/catalog/ www.fujielectric.co.jp/products/semiconductor/model/ www.fujielectric.co.jp/products/semiconductor/model/igbt/application/ www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/ www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/ www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.co.jp/products/semiconductor/journal/ www.fujielectric.co.jp/products/semiconductor/contact/ www.fujielectric.co.jp/products/semiconductor/discontinued/ Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Technical Documents 5 Mounting Instructions 6 IGBT Loss Simulation Software 7 AT-NPC 3-Level Loss Simulation Software 8 Fuji Electric Journal 9 Contact 10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/catalog/ www.fujielectric.com/products/semiconductor/model/ www.fujielectric.com/products/semiconductor/model/igbt/application/ www.fujielectric.com/products/semiconductor/model/igbt/technical/ www.fujielectric.com/products/semiconductor/model/igbt/mounting/ www.fujielectric.com/products/semiconductor/model/igbt/simulation/ www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com/products/semiconductor/journal/ www.fujielectric.com/products/semiconductor/contact/ www.fujielectric.com/products/semiconductor/discontinued/ 中国 1 半导体综合目录 2 产品信息 3 应用手册 4 技术资料 5 安装说明书 6 IGBT 损耗模拟软件 7 AT-NPC 3-Level 损耗模拟软件 8 富士电机技报 9 产品咨询 10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/catalog/ www.fujielectric.com.cn/products/semiconductor/model/ www.fujielectric.com.cn/products/semiconductor/model/igbt/application/ www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/ www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/ www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/ www.fujielectric.com.cn/products/semiconductor/journal/ www.fujielectric.com.cn/products/semiconductor/contact/ www.fujielectric.com.cn/products/semiconductor/discontinued/ 2015-10