Transcript
ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.
Key Features
PRODUCT SUMMARY
Low rDS(on) trench technology Low thermal impedance Fast switching speed
VDS (V)
rDS(on) (mΩ)
ID(A)
13 @ VGS = 10V
14
18 @ VGS = 4.5V
12
30
Features
VDS(V)=30V ID=15A (VGS=10V) RDS(ON)＜8.5mΩ (VGS=10V) RDS(ON)＜13mΩ (VGS=4.5V)
Absolute Maximum Ratings Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
30
V
VGS
±20
V
Gate-Source Voltage O
TA=25 C
Drain Current (Continuous) *AC
O
TA=70 C
Drain Current (Pulse) *B
ID IDM
O
Power Dissipation
TA=25 C O
TA=70 C
Operating and Storage Temperature Range
PD
15 12
A
50 3.5
W
2
O
TJ,Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a
Packaging
Symbol t <= 10 sec Steady State
RθJA
Max 35 81
Unit °C/W
TypeOrdering information
DFN3x3-8L ACE7332M XX + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1
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ACE7332M N-Channel 30-V (D-S) MOSFET Electrical Characteristics Parameter
Symbol
Conditions
Min.
Typ.
Max
Unit
Static Gate-Source Threshold Voltage Gate-Body Leakage
Zero ate Voltage Drain Current
VGS(th)
VDS = VGS, ID = 250 uA
IGSS
VDS = 0 V, VGS = ±20V
±100
VDS = 24 V, VGS = 0 V
1
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
RDS(ON)
Forward Transconductancea Diode Forward Voltagea
1
V
uA
VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V
25 20
A
VGS = 10 V, ID = 11 A
13
VGS = 4.5 V, ID =8.8A
18
VDS =15 V, ID = 11 A
25
S
VSD
IS = 2.6A, VGS = 0 V
0.74
V
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
17
Turn-On Delay Time
td(on)
15
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
54
Input Capacitance
Ciss
1456
Output Capacitance
Coss
Capacitance
mΩ
gFS
Dynamic
Reverse Transfer
nA
25
VDS = 15 V, VGS = 4.5 ID =11 A
VDS = 15 V, RL = 1.4 Ω, ID = 11 A, VGEN
= 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss
11
nC
13 ns
100
231 pF 198
Note: a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing
VER 1.1
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ACE7332M N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics
VER 1.1
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ACE7332M N-Channel 30-V (D-S) MOSFET
VER 1.1
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ACE7332M N-Channel 30-V (D-S) MOSFET
Packing Information DFN3*3-8L U
Unit: mm
VER 1.1
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ACE7332M N-Channel 30-V (D-S) MOSFET
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ACE Technology Co., LTD. http://www.ace-ele.com/
VER 1.1
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