Transcript
Agilent MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block
Description The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• 3 dB Bandwidth: 50 MHz to 1.6 GHz
200 mil BeO Package
• 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure at 0.5 GHz • Hermetic Metal/Beryllia Microstrip Package
Typical Biasing Configuration R bias VCC > 8 V
RFC (Optional) 4 C block
C block 3
IN
1
OUT
MSA
2
Vd = 5.5 V
2
MSA-1120 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature
Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C
Thermal Resistance[2,4]: θjc = 60°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 16.7 mW/°C for TC > 161°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units
Min. 11.5
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
∆GP
Gain Flatness
f = 0.1 to 1.0 GHz
dB
f3 dB
3 dB Bandwidth[2]
VSWR
GHz
Input VSWR
f = 0.1 to 1.5 GHz
Typ.
Max.
12.5
13.5
±0.7
±1.0
1.6 1.7:1
Output VSWR
f = 0.1 to 1.5 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
1.9:1
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V mV/°C
3.5 16.0
4.5
17.5 30.0 200
4.5
5.5
6.5
–8.0
Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P).
3
MSA-1120 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA) S11
S21
S12
S22
Freq. GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000
.78 .19 .05 .04 .04 .05 .07 .09 .10 .12 .14 .15 .17 .19 .25 .31 .35 .40
–21 –72 –56 –52 –56 –72 –84 –96 –105 –113 –120 –127 –134 –140 –167 171 157 140
19.6 13.8 12.9 12.5 12.5 12.4 12.4 12.3 12.1 12.0 11.8 11.6 11.4 11.1 9.8 8.4 7.3 6.1
9.53 4.91 4.44 4.23 4.22 4.19 4.15 4.10 4.04 3.98 3.89 3.80 3.71 3.60 3.10 2.64 2.31 2.02
168 165 174 174 172 165 158 151 144 137 131 124 118 112 83 58 39 19
–25.1 –16.8 –16.5 –16.1 –16.2 –16.1 –16.0 –15.9 –15.8 –15.6 –15.4 –15.2 –15.0 –14.8 –14.0 –13.3 –12.8 –12.5
.057 .144 .149 .156 .155 .157 .159 .161 .163 .166 .169 .173 .178 .181 .200 .216 .228 .236
50 11 3 2 1 1 2 2 3 3 2 2 1 2 –3 –10 –16 –23
.79 .19 .06 .04 .04 .06 .09 .11 .13 .16 .18 .20 .22 .24 .31 .35 .36 .36
–21 –72 –75 –79 –78 –91 –101 –109 –117 –124 –130 –136 –142 –148 –174 163 148 134
0.51 0.98 1.08 1.08 1.09 1.08 1.07 1.06 1.05 1.04 1.03 1.01 1.00 0.99 0.95 0.95 0.96 0.99
Typical Performance, TA = 25°C, ZO = 50 Ω (unless otherwise noted) 100
16 14 ZO = 50 Ω
10
10
Gp (dB)
8
40
6
0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz
12
60
ZO = 75 Ω
Id (mA)
G p (dB)
12
14
TC = +125°C TC = +25°C 80 T = –55°C C
2.0 GHz
8
4 6
20 2 0 .02
0 .05
0.1
0.5 1.0
2.0 3.0
4 0
2
4
20
17 20
I d = 75 mA
11
5
18
3 –55
+25
+125
4.0
16
14 NF
I d = 60 mA
NF (dB)
P1 dB (dBm)
12
Gp (dB)
4.5 13
GP
80
5.0
P1 dB
4
60
Figure 3. Power Gain vs. Current.
22
18
16
40
I d (mA)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. P1 dB (dBm)
8
Vd (V)
FREQUENCY (GHz)
NF (dB)
6
3.5
I d = 75 mA I d = 60 mA I d = 40 mA
I d = 40 mA
12 0.1
0.2 0.3
0.5
1.0
2.0
3.0 0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Ordering Information Part Numbers
No. of Devices
Comments
MSA-1120
10
Bulk
200 mil BeO Package Dimensions 4
GROUND
.300 ± .025 7.62 ± .64 45°
.030 .76 3
1
RF OUTPUT AND BIAS Notes: NO REFERENCE (unless otherwise specified) 1. Dimensions are in GROUND 2 mm 2. Tolerances in .xxx = ± 0.005 .060 1.52 mm .xx = ± 0.13 Package marking code is “A11” 3. Base of package is electrically isolated. .048 ± .010 1.21 ± .25 .004 ± .002 .128 .10 ± .05 3.25 RF INPUT
.205 5.21
www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. Obsoletes 5965-9559E April 8, 2005 5989-2748EN
.023 .57
