Transcript
ADVANCED LINEAR DEVICES, INC.
ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1107/ALD1117 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. FEATURES • Low threshold voltage of -0.7V • Low input capacitance • Low Vos 2mV typical • High input impedance -- 1014Ω typical • Negative current (IDS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 • Low input and output leakage currents • RoHS compliant
• • • • • • • •
Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog signal processing
PIN CONFIGURATION ALD1117 DP1
1
8
DP2
GP1
2
7
GP2
SP1
3
6
SP2
V-
4
5
V+
TOP VIEW SAL, PAL, DA PACKAGES
ALD1107
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range* 0°C to +70°C -55°C to +125°C
0°C to +70°C
APPLICATIONS
8-Pin SOIC Package
8-Pin Plastic Dip Package
8-Pin CERDIP Package
ALD1117SAL
ALD1117PAL
ALD1117DA
14-Pin SOIC Package
14-Pin Plastic Dip Package
14-Pin CERDIP Package
ALD1107SBL
ALD1107PBL
ALD1107DB
DP1
1
14
DP2
GP1
2
13
GP2
SP1
3
12
SP2
V-
4
11
V+
DP4
5
10
DP3
GP4
6
9
GP3
SP4
7
8
SP3
TOP VIEW SBL, PBL, DB PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
BLOCK DIAGRAM ALD1107
ALD1117
V- (4) DP2 (14)
DP1 (1)
GP2 (13)
GP1 (2)
SP1 (3)
V+ (11)
SP2 (12)
~
V - (4) DP4 (5)
DP3 (10)
GP3 (9)
DP1 (1)
GP4 (6)
SP3 (8)
V+ (11)
SP4 (7)
~
DP2 (8)
GP1 (2)
GP2 (7)
SP1 (3)
V+ (5)
SP2 (6)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range
SAL, PAL, SBL, PBL packages DA, DB packages
Storage temperature range Lead temperature, 10 seconds CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
-10.6V -10.6V 500mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1107 Parameter
Symbol
Gate Threshold Voltage
VT
Offset Voltage VGS1-VGS2
VOS
Gate Threshold Temperature Drift 2 On Drain Current Transconductance
Min -0.4
TCVT
ALD1117
Test
Typ
Max
Min
Typ
-0.7
-1.0
-0.4
-0.7
-1.0
2
10
2
10
-1.3
Max
-1.3
IDS (ON)
-1.3
-2
-1.3
-2
GIS
0.25
0.67
0.25
0.67
Unit
Conditions
V
IDS = -1.0µA VGS = VDS
mV
IDS = -10µA VGS = VDS
mV/°C
mA
VGS = VDS = -5V
mmho VDS = -5V IDS = -10mA
Mismatch
∆Gfs
0.5
0.5
%
Output Conductance
GOS
40
40
µmho
VDS = -5V IDS = -10mA
Ω
VDS = -0.1V VGS = -5V
%
VDS = -0.1V VGS = -5V
V
IDS = -1.0µA VGS = 0V
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance Mismatch
∆RDS (ON)
Drain Source Breakdown Voltage
BVDSS
1200
1800
1200
0.5
1800
0.5
-12
-12
Off Drain Current 1
IDS (OFF)
10
400 4
10
400 4
pA nA
VDS = -12V VGS = 0V TA = 125°C
Gate Leakage Current
IGSS
0.1
10 1
0.1
10 1
pA nA
VDS = 0V VGS = -12V TA = 125°C
Input Capacitance 2
CISS
1
3
1
3
pF
Notes:
1 2
Consists of junction leakage currents Sample tested parameters
ALD1107/ALD1117
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TYPICAL PERFORMANCE CHARACTERISITCS LOW VOLTAGE OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
VGS = -12V
VBS = 0V TA = 25°C
-7.5
DRAIN SOURCE CURRENT (µA)
DRAIN SOURCE CURRENT (mA)
500 -10
-10V -8V
-5.0
-6V -2.5
-4V
VGS = -12V
VBS = 0V TA = 25°C
250
-6V -4V -2V
0
-250
-2V
-500
0 0
-2
-4
-6
-8
-10
-12
-320
-160
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS -20
1.0 IDS = -5mA
VBS = 0V f = 1KHz
0.5 0.2 0.1
TA = +125°C
TA = +25°C
0.05
VBS = 0V
DRAIN SOURCE CURRENT (µA)
FORWARD TRANSCONDUCTANCE (mmho)
FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE
IDS = -1mA
0.02
4V 6V 8V 10V 12V
2V
-15
-10
-5 VGS = VDS TA = 25°C 0
0.01 0
-2
-4
-6
-8
-10
0
-12
-0.8
DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE
-2.4
-3.2
-4.0
OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA)
100 VDS = 0.4V VBS = 0V 10
-1.6
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE (KΩ)
320
160
0
TA = +125°C
1 TA = +25°C
1000 VDS = -12V VGS = VBS = 0V 100
10
1
0.1 0
-2
-4
-6
-8
-10
-12
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1107/ALD1117
-50
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
1/2 ALD1107 or ALD1117
1/2 ALD1107 or ALD1117 V+ = +5V Q3
ISET
Q4
Q3
Q4
RSET ISET
I SOURCE
Q1
Digital Logic Control of Current Source ON
Q2
I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET
1/2 ALD1106 or ALD1116 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+ = +5V
PMOS PAIR
ISET
Q1
Q2 NMOS PAIR
1/2 ALD1106 or ALD1116
ISOURCE = ISET x N Q1
QSET
Q2
Q3
QN
VIN-
Current Source
Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET
ALD1107/ALD1117
RSET
Q4 VOUT
VIN+
1/4 ALD1106 or 1/2 ALD1116
Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET
1/2 ALD1107 or ALD1117
Q3
Q1
OFF
DIFFERENTIAL AMPLIFIER
V+
ISOURCE
RSET
QSET, Q1..QN: ALD1106 or ALD1116 N - Channel MOSFET
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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES P- CHANNEL CURRENT SOURCE
N- CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
1/2 ALD1107 or ALD1117
RSET
ISET ISOURCE
8 Q2 8
3
5 6
Q1
2 7
3
2
Q4 5
1
I SOURCE ISET
1/2 ALD1106 or ALD1116 ISOURCE = ISET =
7 6
Q3
V+ - Vt RSET
~ V+ - 1.0 = ~ = RSET
RSET
4 RSET
Q3, Q4: P - Channel MOSFET
Q1, Q2 : N - Channel MOSFET
CASCODE CURRENT SOURCES V+ = +5V
V+ = +5V
ALD1107
ISET
RSET
ISOURCE Q4
Q1
Q2
Q3
Q4
Q3
Q2
Q1 ISET
ISOURCE
RSET
ALD1106
ISOURCE = ISET =
~ =
3 RSET
Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103)
Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103)
ALD1107/ALD1117
V+ - 2Vt RSET
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters Dim
S (45°)
D
A
Min 1.35
Max 1.75
Min 0.053
Max 0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1107/ALD1117
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D S
A2
A1 e
b
A L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c e1
ALD1107/ALD1117
ø
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CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E E1 Millimeters
D
A1
s
A L
L2 b
b1 e
L1
Min
Inches
Dim A
3.55
Max 5.08
Min 0.140
Max 0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-8
--
10.29
--
0.405
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C e1
ALD1107/ALD1117
ø
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SOIC-14 PACKAGE DRAWING
14 Pin Plastic SOIC Package
Millimeters
E
S (45°)
Dim A
Min 1.35
Max 1.75
Min 0.053
Max 0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-14
8.55
8.75
0.336
0.345
E
3.50
4.05
0.140
0.160
1.27 BSC
e
D
A
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
A1
e b
S (45°)
H
L
ALD1107/ALD1117
C
ø
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PDIP-14 PACKAGE DRAWING
14 Pin Plastic DIP Package
Millimeters
E
E1
D S
A2 A1
A L
Inches
Dim A
Min
Max
Min
3.81
5.08
0.105
Max 0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-14
17.27
19.30
0.680
0.760
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-14
1.02
2.03
0.040
0.080
ø
0°
15°
0°
15°
e
b b1
c e1
ALD1107/ALD1117
ø
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CERDIP-14 PACKAGE DRAWING
14 Pin CERDIP Package
Millimeters
E E1
D
A1
s
A L
L1
L2 b
b1 e
Inches
Dim A
Min
Max
Min
Max
3.55
5.08
0.140
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-14
--
19.94
--
0.785
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C e1
ALD1107/ALD1117
ø
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