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A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s Edition 2007-08-14 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 121 Application Note No. 121 Revision History: 2007-08-14, Rev. 1.2 Previous Version: 2003-08-29, Rev. 1.1 Page Subjects (major changes since last revision) All Small changes in figure descriptions Application Note 3 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor 1 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Overview • • • • • • • BFP640 used for 1575 MHz Global Positioning Satellite (GPS) Applications BFP640 is investigated for use as an LNA for 1575 MHz GPS Design Goals: Gain = 16 dB min, Noise Figure < 0.6 dB, Input / Output Return Loss 10 dB or better, current < 10 mA from a 3.0 V power supply, Input P1dB > -14.8 dBm min Printed Circuit Board used is Infineon Part Number 640-061603 Rev A. Standard FR4 material is used in a three-layer PCB. Please refer to cross-sectional diagram. Low-cost, standard "0402" case-size SMT passive components are used throughout. Please refer to schematic and Bill Of Material. The LNA is unconditionally stable from 5 MHz to 6 GHz. Total PCB area used for the single LNA stage is approximately 35 mm². Total Parts count, including the BFP640 transistor, is 12. Achieved ≅ 17 dB gain, 0.92 dB Noise Figure at 1575 MHz from 3.0 V supply drawing 8.3 mA. Note noise figure result does NOT "back out" FR4 PCB losses - if the PCB loss at LNA input were extracted, Noise Figure result would be approximately 0.2 dB lower. Amplifier is unconditionally stable from 5 MHz to 6 GHz. Input P1dB ≈ -13.1 dBm @ 1575.4 MHz. Outstanding Input Third Order Intercept of +7.7 dBm. PCB Cross - Section Diagram 7+,663$&,1*&5,7,&$/ LQFKPP 723/$<(5 ,17(51$/*5281'3/$1( LQFKPP" /$<(5)250(&+$1,&$/5,*,',7<2)3&% 7+,&.1(66+(5(127 &5,7,&$/$6/21*$6727$/3&%7+,&.1(66'2(6127(;&((' ,1&+PP 63(&,),&$7,21)25727$/3&%7+,&.1(66 ,1&+PPPP %27720/$<(5 $1B3&%BFURVVBVHFWLRQYVG Figure 1 PCB Cross - Section Diagram Application Note 4 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Summary of Data (T = 25 °C) Network analyzer source power = -25 dBm Table 1 Summary of Data Parameter Result Comments Frequency Range 1525 - 1625 MHz 1575.42 MHz DC Current 8.3 mA DC Voltage, VCC 3.0 V Gain 17.6 dB @ 1575.42 MHz Noise Figure 0.92 dB @ 1575.42 MHz See Noise Figure plots and tabular data,Figure 3 and Table 3 Input P1dB -13.1 dBm @ 1575.42 MHz See input power sweep vs. gain plot, Figure 7 Output P1dB +3.5 dBm @ 1575.42 MHz (These values do NOT extract PCB losses, etc. resulting from FR4 board and passives used on PCB - these results are at input SMA connector) rd Input 3 Order Interception rd +7.7 dBm @ 1575.42 MHz Output 3 Order Interception +25.3 dBm @ 1575.42 MHz Input Return Loss 11.2 dB @ 1575.42 MHz Output Return Loss 10.3 dB @ 1575.42 MHz Reserve Isolation 26.5 dB @ 1575.42 MHz Application Note 5 See Figure 15 and Figure 16 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Bill of Material Table 2 Bill Of Material REFERENCE DESIGNATOR VALUE MANUFACTURER CASE SIZE FUNCTION C1 22 pF Various 0402 DC Blocking, Input C2 1.5 pF Various 0402 DC Block, Output. Also Influences Output and Input Impedance Match C3 0.1 µF Various 0402 Decoupling, Low Frequency. Also improves Third-Order Interception C4* 22 pF Various 0402 Decoupling (RF Short) C5* 33 pF Various 0402 Decoupling (RF Short) C6* 0.1 µF Various 0402 Decoupling, Low Frequency L1 22 nH Murata LQP15M Series 0402 RF Choke at Input L2 5.1 nH Murata LQP15M Series 0402 RF Choke + Impedance Match at Output R1 15 Ω Various 0402 Stability Improvement R2 39 kΩ Various 0402 Brings Bias Current / Voltage into Base of Transistor R3 39 Ω Various 0402 Provides some Negative Feedback for DC BIAS / DC Operation Point to Compensate for Variations in Transistor DC Current Gain, Temperature Variations, etc. Q1 - Infineon Technologies SOT343 BFP640 B7HF Transistor J1, J2 - Johnson 142-0701-841 - J3 - AMP 5 Pin Header MTA-100 Series 640456-5 (standard pin plating) or 641215-5 (gold plated pins) Application Note 6 RF Input / Output Connectors DC Connector Pins 1,5 = GROUND Pin 3 = VCC Pins 2,4 = no connection Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Schematic Diagram For 1575 MHz LNA 9FF  9 - '&&RQQHFWRU , P$ 5 RKPV 5 . & X) & X) & S) / %ODFNUHFWDQJOHVDUH Q+ PLFURVWULSWUDFNVQRWFKLS FRPSRQHQWV 5 RKPV / Q+ 4 %)36L*H 7UDQVLVWRU - 5),1387 & S) - 5)287387 3&% 5HY$ 3&%RDUG0DWHULDO 6WDQGDUG)5 & S) ,QGXFWLYH(PLWWHU'HJHQHUDWLRQ 0LFURVWULS IRU,3LPSURYHPHQW5) PDWFKLQJ :LGWK LQFKPP /HQJWK LQFKPP Figure 2 & S) %)39FH 9 $1B6FKHPDWLFYVG Schematic Diagram Application Note 7 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Noise Figure, Plot. Center of Plot (x-axis) is 1575.42 MHz. 5RKGH 6FKZDU])6(. $XJ 1RLVH)LJXUH (871DPH 0DQXIDFWXUHU 2SHUDWLQJ&RQGLWLRQV 2SHUDWRU1DPH 7HVW6SHFLILFDWLRQ &RPPHQW %)3*36/1$0+] ,QILQHRQ7HFKQRORJLHV 9 9, P$7 & *HUDUG:HYHUV /:56'/1$3 2Q3&%5HY$ $XJXVW $QDO\]HU 5)$WW 5HI/YO G% G%P 5%: 9%: 0+] +] 5DQJH G% 5HI/YODXWR 21 0RGH 'LUHFW (15 +3$(15 0HDVXUHPHQW QGVWDJHFRUU 21 1RLVH)LJXUHG%            0+] 0+]',9 0+] $1BSORWBQRLVHBILJXUHYVG Figure 3 Noise Figure Application Note 8 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Noise Figure, Tabular Data From Rhode & Schwarz FSEK3 + FSEB30 System Preamplifier = MITEQ SMC-02 Table 3 Noise Figure Frequency Noise Figure 1525.4 MHz 0.89 dB 1535.4 MHz 0.91 dB 1545.4 MHz 0.90 dB 1555.4 MHz 0.92 dB 1565.4 MHz 0.92 dB 1575.4 MHz 0.92 dB 1585.4 MHz 0.89 dB 1595.4 MHz 0.92 dB 1605.4 MHz 0.92 dB 1615.4 MHz 0.93 dB 1625.4 MHz 0.91 dB Application Note 9 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Scanned Image of PC Board Figure 4 Image of PC Board Application Note 10 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Scanned Image of PC Board, Close-In Shot Figure 5 Image of PC Board, Close-In Shot Application Note 11 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Stability Factor “K” and Stability Measure “B1” Note that if k > 1 and B1 >0, the amplifier is unconditionally stable. Measured LNA s-parameters were taken on a Network Analyzer & then imported into GENESYS simulation package, which calculates and plots K and B1 Figure 6 Plots of K(f) and B1(f) (5 MHz - 6 GHz) Application Note 12 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Power Sweep at 1575 MHz (CW) Source Power (Input) Swept from -25 dBm to 0 dBm Input P1dB ≅ -13.1 dBm $XJ &+ 6  ORJ0$* G% 5()G% BG% G%P 35P BG% G%P &RU 0$5.(5 'HO G%P  67$57G%P  &:0+] 6723G%P $1BSORWBSRZHUBVZHHSYVG Figure 7 Power Sweep Application Note 13 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Input Return Loss, Log Mag &+ 6  ORJ0$* G% 5()G% $XJ BG% 0+] 35P &RU 'HO  67$570+] 67230+] $1BSORWBLQSXWBUHWXUQBORVVYVG Figure 8 Plot of Input Return Loss Application Note 14 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Input Return Loss, Smith Chart Reference Plane = Input SMA Connector on PC Board $XJ &+ 6  8)6 B  S) 0+] 35P &RU 'HO  67$570+] 67230+] $1BVPLWKBLQSXWBUHWXUQBORVVYVG Figure 9 Smith Chart of Input Return Loss Application Note 15 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Forward Gain, Wide Sweep 5 MHz to 6 GHz $XJ &+ 6  ORJ0$* G% 5()G% BG% 0+] 35P &RU 'HO  67$570+] 67230+] $1BSORWBIZBJDLQBZLGHYVG Figure 10 Plot of Forward Gain with Wide Sweep (5 MHz - 6 GHz) Application Note 16 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Forward Gain, Narrow Sweep &+ 6  ORJ0$* G% 5()G% $XJ BG% 0+] 35P  &RU 'HO 67$570+] 67230+] $1BSORWBIZBJDLQBQDUURZYVG Figure 11 Plot of Forward Gain(5 MHz - 6 GHz) Application Note 17 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Reverse Isolation &+ 6  ORJ0$* G% 5()G% $XJ BG% 0+] 35P &RU 'HO 6&$/( G%GLY  67$570+] 67230+] $1BSORWBUHVHUYHBLVRODWLRQYVG Figure 12 Plot of Reverse Isolation Application Note 18 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Output Return Loss, Log Mag &+ 6  ORJ0$* G% 5()G% $XJ BG% 0+] 35P &RU 'HO 6&$/( G%GLY  67$570+] 67230+] $1BSORWBRXWSXWBUHWXUQBORVVYVG Figure 13 Plot of Output Return Loss Application Note 19 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Output Return Loss, Smith Chart Reference Plane = Output SMA Connector on PC Board &+ 6  8)6 B $XJ  S+ 0+] 35P &RU 'HO  67$570+] 67230+] $1BVPLWKBRXWSXWBUHWXUQBORVVYVG Figure 14 Smith Chart of Output Return Loss Application Note 20 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Input Stimulus for Amplifier Two-Tone Test f1 = 1575 MHz, f2 = 1576 MHz, -23 dBm each tone $1BSORWBWZRBWRQHBLQSXWYVG Figure 15 Input Stimulus for Amplifier Tow-Tone Test Application Note 21 Rev. 1.2, 2007-08-14 Application Note No. 121 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor LNA Response to Two-Tone Test Input IP3 = -23 + (61.4 / 2) = +7.7 dBm Output IP3 =+7.7 dBm + 17.6 dB gain = +25.3 dBm $1BSORWBWZRBWRQHBUHVSRQVHYVG Figure 16 LNA Response to Tow-Tone Test Application Note 22 Rev. 1.2, 2007-08-14