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A pp li c at i on N ot e , R ev . 1 . 2 , J an ua ry 2 00 8
A p p li c a t i o n N o t e N o . 1 3 6 L o w C o s t , 3 V ol t , + 1 4 d B m 2 .3 3 G H z S D A R S A c t i v e A nt e n n a 2n d S t a g e L ow N oi s e A m p l i f i e r u s i n g th e I n f i ne o n B F P 6 4 0 S i G e T r a n s i s to r
R F & P r o t e c ti o n D e v i c e s
Edition 2008-01-07 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Application Note No. 136
Application Note No. 136 Revision History: 2008-01-07, Rev. 1.2 Previous Version: 2004-11-12, Rev. 1.1 Page
Subjects (major changes since last revision)
All
Small changes in figure descriptions
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low
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Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Transistor
Overview The Silicon-Germanium BFP640 SiGe Low Noise Transistor is shown in an SDARS active antenna LNA application. The BFP640 is targeted for the 2nd stage in a 3 stage SIRIUS LNA chain. The demo board is standard FR4 material and "0402" case sizes components are used throughout. A total of approximately 41 mm² of PCB area is required, and the total component count, including the BFP640 and all passives, is 12. SDARS Active Antenna LNA 2320 - 2332.5 MHz (SIRIUS, 3 Stages)
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Figure 1
Overview of SDARS Active Antenna LNA
Summary Achieved 16.8 dB gain, 1.3 dB Noise Figure over the 2320 - 2345 MHz band, drawing 23.6 mA @ 3.0 V. Noise figure result does NOT "back out" FR4 PCB losses - if PCB loss at LNA input were extracted, Noise Figure result would be approximately 0.1 - 0.2 dB lower. Amplifier is unconditionally stable from 5 MHz to 6 GHz. Output P1dB = +13.7 dBm @ 3 V. Input 3rd Order Intercept = +13.01 dBm @ 2332 MHz, Output IP3 = +29.8 dBm.
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low PCB Cross - Section Diagram
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Schematic Diagram
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Summary of Data
T = 25 °C, Network analyzer source power = -25 dBm Table 1
Summary of Data
Parameter
Result
Comments
Frequency Range
Under 2320 - over 2345 MHz
Covers both XM Radio and SIRIUS frequency bands.
DC Current
23.6 mA @ 3.0 V
Note power supply voltage is measured directly across PCB supply line and ground, to eliminate voltage drop across wire harness.
Gain
16.9 dB @ 2320 MHz 16.8 dB @ 2332.5 MHz 16.8 dB @ 2345 MHz
Negligible change in gain or matching at 3.3 or 3.0 volts.
Noise Figure
1.3 dB @ 2320 MHz 1.3 dB @ 2332.5 MHz 1.4 dB @ 2345 MHz
These values do not extract PCB losses, etc. resulting from FR4 board an passives used on PCB these results are at input SMA connector.
Input P1dB
-2.1 dBm @ 3.0 V
Measured @ 2332.5 MHz. See Figure 8
Output P1dB
+13.7 dBm @ 3.0 V
See Figure 8
Power Added Efficiency (PAE) at 1 dB Compression Point
32.2% @ 3.0 V
PAE = (POUT - PIN) / (VCC x IC) Decent results for a “Class A” amplifier.
Input 3rd Order Intercept
+13.0 dBm @ 2332 MHz
Measured at 3.3 V, see Figure 15 and Figure 16
Output 3rd Order Intercept
+29.8 dBm @ 2332 MHz
Measured at 3.3 V, see Figure 15 and Figure 16
Input Return Loss
17.8 dB @ 2320 MHz 18.1 dB @ 2332.5 MHz 15.5 dB @ 2345 MHz
Output Return Loss
14.6 dB @ 2320 MHz 14.2 dB @ 2332.5 MHz 13.9 dB @ 2345 MHz
Reverse Isolation
21.7 dB @ 2320 MHz 21.6 dB @ 2332.5 MHz 21.6 dB @ 2345 MHz
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Figure, Plot, 2232.5 MHz to 2432.5 MHz, Center of Plot (x-axis) is 2332.5 MHz.
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Figure 4
Noise Figure
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Figure, Tabular Data From Rohde & Schwarz FSEK3 + FSEB30 System Preamplifier = MITEQ SMC-02 Table 2
Noise Figure
Frequency
Noise Figure
2232.5 MHz
1.34 dB
2245 MHz
1.34 dB
2257.5 MHz
1.38 dB
2270 MHz
1.34 dB
2282.5 MHz
1.34 dB
2295 MHz
1.33 dB
2307.5 MHz
1.33 dB
2320 MHz
1.34 dB
2332.5 MHz
1.29 dB
2345 MHz
1.36 dB
2357.5 MHz
1.34 dB
2370 MHz
1.31 dB
2382.5 MHz
1.31 dB
2395 MHz
1.32 dB
2407.5 MHz
1.32 dB
2420 MHz
1.35 dB
2432.5 MHz
1.31 dB
2442.5 MHz
1.31 dB
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Scanned Image of PC Board
Figure 5
Image of PC Board
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Scanned Image of PC Board, Close-In Shot. Total PCB area used ≅ 41 mm²
Figure 6
Image of PC Board, Close-In Shot
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Stability Factor “K” and Stability Measure “B1” (5 MHz - 6 GHz) Plots are generated from real, measured S parameters taken from the demo PC board, NOT a simulation. S parameters are exported from Network Analyzer, then imported into Eagleware GENESYS software, which calculates and plots K and B1. Note K > 1 and B1 > 0, showing unconditional stability. K is trace in red color (bottom trace) and is assigned to left vertical axis at bottom of page. Note K > 1. “Glitch" at low frequencies e.g. < 200 MHz is due to lack of dynamic range in network analyzer - S parameter S12 becomes vanishingly small as one moves lower in frequency, which causes expression for calculating "K" to "blow up”. B1 is trace is blue in color (top trace) and is assigned to right vertical.
Figure 7
Plot of K(f) and B1(f)
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Gain Compression Test
VCC = 3.0 V Network Analyzer is set to "CW" mode - e.g. set to a single frequency, with power sweep. Input power is swept from -25 dBm to +3 dBm at 2332.5 MHz.Amplifier hits Input 1 dB compression point (IP1dB) at - 2.1 dBm input power. Output P1dB = - 2.1 dBm + 15.8 dB gain at P1dB point => +13.7 dBm, or 23.4 mW.
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Figure 8
Plot of Gain Compression Test
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Input Return Loss, Log Mag 5 MHz - 6 GHz
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Plot of Input Return Loss
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Input Return Loss, Smith Chart Reference Plane = Input SMA Connector on PC Board 5 MHz - 6 GHz
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Figure 10
Smith Chart of Input Return Loss
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Forward Gain, Wide Sweep 5 MHz - 6 GHz
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Figure 11
Plot of Forward Gain
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Reverse Isolation 5 MHz - 6 GHz
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Figure 12
Plot of Reverse Isolation
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Output Return Loss, Log Mag 5 MHz - 6 GHz
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Figure 13
Plot of Output Return Loss
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Output Return Loss, Smith Chart Reference Plane = Output SMA Connector on PC Board 5 MHz - 6 GHz
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Figure 14
Smith Chart of Output Return Loss
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Two-Tone Test, 2332 MHz Input Stimulus for Amplifier Two-Tone Test.
f1 = 2332 MHz, f2 = 2333 MHz, -19 dBm each tone.
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Figure 15
Tow-Tone Test, Input Stimulus @ 2332 MHz
Application Note
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Rev. 1.2, 2008-01-07
Application Note No. 136 Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Two-Tone Test, 2332 MHz LNA Response to Two-Tone Test. Input IP3 = -19 + (64.0 / 2) = +13.0 dBm Output IP3 = +13.0 dBm + 16.8 dB gain = +29.8 dBm
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Figure 16
Tow-Tone Test, LNA Response @ 2332 MHz
Application Note
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Rev. 1.2, 2008-01-07