Transcript
B GB 741L 7E SD B GB 741L 7E SD as Low N ois e A mplifi er f or Applic a tions i n 3 00 MHz to 5 G Hz
Applic atio n N ote A N 207 Revision: Rev. 1.0 2010-06-28
RF and P r otecti on D evic es
Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGB741L7ESD BGB741L7ESD for 300MHz to 5GHz Applications
Application Note AN207 Revision History: 2010-06-28 Previous Revision: Page
Subjects (major changes since last revision)
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Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz
Table of Content 1
BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz ........................... 5
2
Application Information ..................................................................................................................... 7
3
Summary of Measurement Results .................................................................................................. 8
4
BGB741L7ESD Application Schematic .......................................................................................... 12
5
Measured Graphs for 1.8V ............................................................................................................... 14
6
Measured Graphs for 3.0V ............................................................................................................... 18
7
Measured Graphs for 4.0V ............................................................................................................... 22
8
Evaluation Board and layout Information ...................................................................................... 26
List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30
Block Diagram of the BGB741L7ESD. ................................................................................................. 6 Application diagram of th BGB741L7ESD for 300 MHz to 5GHz applications. ................................... 7 Schematics of the BGB741L7ESD for 300 MHz to 5GHz applications. ............................................ 12 Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing. ....... 13 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ................ 14 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ............................. 14 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ......................... 15 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ...................... 15 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ..................... 16 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ... 16 rd Input 3 interception point of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. .......... 17 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. ......................... 17 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ................ 18 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ............................. 18 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ......................... 19 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ...................... 19 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ..................... 20 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ... 20 rd Input 3 intercept point of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. ............... 21 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. ......................... 21 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ................ 22 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ............................. 22 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ......................... 23 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ...................... 23 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ..................... 24 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ... 24 rd Input 3 intercept point of the BGB741L7ESD from 300MHz to 5GHz applications 4.0V. ............... 25 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 4.0V. ......................... 25 Photo picture of Evaluation Board...................................................................................................... 26 PCB Layer Information ....................................................................................................................... 26
List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6
Pin definition and function .................................................................................................................... 6 Summary of Measurement Results for UHF 300-860MHz .................................................................. 8 Summary of Measurement Results for GPS 1575MHz ....................................................................... 9 Summary of Measurement Results for WLAN/WiMax 2300MHz to 2700MHz .................................. 10 Summary of Measurement Results for WiMax 3300MHz to 3700MHz ............................................. 11 Bill-of-Materials................................................................................................................................... 12
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BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz
1
BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz
The MMIC LNA BGB741L7ESD from Infineon Technologies is a high performance broadband amplifier for wireless solutions from 300MHz up to 5GHz.
Built up with Silicon Germanium (Si:Ge) technology, the BGB741L7ESD offers an excellent noise figure over broad frequency band. The biasing and stabilization circuits built inside the BGB741L7ESD reduce the number of external parts down to 6 and make the BGB741L7ESD interesting for compact and high performance LNA designs.
The component can be used from 1.8V until 4.0V and from 5mA to 30mA. Furthermore, this device includes an integrated ESD protection circuit on chip which protects the device upto 4.0kV at the input pin and 2.5kV at the output pin (according to Human Body Model). A CMOS-technology compliant power-on/off function is also integrated in the device. For environments more sensitive to ESD discharges, the device can be strengthened by using an additional ESD diode at the RF input of the circuit (ESD0P2RFL ESD diodes series from Infineon Technologies for example). The component will be enhanced against stronger ESD aggression potentially caused by non protected devices (like antenna modules).
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BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz
The first figure presents the block diagram of the BGB741L7ESD. The device is Packaged in TSLP-7-1 format and the pinning information are summarized in the table 1.
Figure 1
Table 1 Pin N°
Block Diagram of the BGB741L7ESD.
Pin definition and function Name
Function
1
Vcc
2
Vbias
Output of biasing circuitry to the transistor base
3
RFin
RF input of the BGB741L7ESD LNA
4
RFout
5
Vctrl
Power off/on mode Function
6
Adj
Current adjustment (please see figure 2 and 3)
7
GND
Application Note AN207, Rev. 1.0
Voltage supply
RF output of the LNA
Ground of the BGB741L7ESD
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BGB741L7ESD for 300MHz to 5GHz Applications Application Information
2
Application Information
This application note presents the performances of the BGB741L7ESD in a broadband mode from 300MHz to 5GHz. Thus, this LNA fits for applications like UHF, ISM bands, GPS, UMTS, WLAN 2.4GHz and WiMax upto 3.8GHz. The following application diagram (please see the figure 2) shows where the BGB741L7ESD can be used on a transmission/reception signal chain.
Figure 2
Application diagram of the BGB741L7ESD for 300 MHz to 5GHz applications.
This document provides the results for several bands (UHF, GPS, WLAN 2.4G, WiMax) in relation with the current/voltage biasing (Please see the Table 2, 3, 4 and 5 below).
Please note that the gains in-band (Table 2, 3, 4 and 5) are referenced to the lowest gain measured in the described frequency band. The related 3 rd order intercept point and -1dB compression point are measured at the frequency point described in the comments. These measurements are measured in-band without out-of-band jammer signalsThe device is unconditionally stable from DC until 10GHz.
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BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results
3
Summary of Measurement Results
Table 2
Summary of Measurement Results for UHF 300-860MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
300…860MHz
MHz
DC Voltage
Vcc
DC Current
Icc
6
10
20
6
10
20
6
10
20
mA
Gain
G
18.2
20.0
21.7
18.0
19.8
21.5
18.2
19.8
21.6
dB
Pin=-30dBm
Noise Figure
NF
1.8
1.7
1.8
1.85
1.7
1.75
1.85
1.7
1.8
dB
SMA and PCB loss of 0.1 dB included
RLin
9.6
16.6
9.9
9.3
16.0
9.2
9.1
16.75
9.4
dB
Pin=-30dBm
RLout
8.3
14.1
13.2
8.1
12.7
11.95
8
13.4
12.2
dB
Pin=-30dBm
IRev
21.4
23.0
25.3
21.4
22.9
25.3
21.4
22.8
25.4
dB
Pin=-30dBm
Input P1dB
IP1dB
-7.7
-10.1
-12.5
-4.9
-7.6
-9.7
-3.3
-5.9
-8.4
dBm
Output P1dB
OP1dB
9.5
8.9
8.2
12.1
11.2
10.8
13.9
12.9
12.2
dBm
Input Return Loss Output Return Loss Reverse Isolation
1.8
3.0
V
4.0
Input IP3
IIP3
-0.9
2.2
1.3
-1.4
3.1
3.6
-1.8
3.3
4.1
Output IP3
OIP3
17.3
22.2
23.0
16.6
22.9
25.1
16.4
23.1
25.7
Stability
k
Application Note AN207, Rev. 1.0
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Measured @ 860MHz
In-band, f1=859MHz, f2=860MHz, dBm Pin=-30dBm dBm --
>1
Note/Test Condition
Unconditionally stable from DC to 10GHz
BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results
Table 3
Summary of Measurement Results for GPS 1575MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
1575
MHz
DC Voltage
Vcc
DC Current
Icc
6
10
20
6
10
20
6
10
20
mA
Gain
G
17.6
19.5
21.2
17.6
19.4
21.2
17.7
19.4
21.3
dB
Pin=-30dBm
Noise Figure
NF
1.2
1.15
1.3
1.25
1.2
1.25
1.25
1.2
1.3
dB
SMA and PCB loss of 0.1 dB included
RLin
14.4
14.8
10.7
15.3
15.8
10.0
14.4
15.4
10.6
dB
Pin=-30dBm
RLout
14.3
26.3
20.8
14.4
23.3
17.3
14.1
25.2
18.5
dB
Pin=-30dBm
IRev
21.9
23.5
25.8
21.8
23.3
25.8
21.8
23.3
25.8
dB
Pin=-30dBm
Input P1dB
IP1dB
-7.6
-10.0
-12.7
-4.8
-7.5
-9.6
-3.2
-5.8
-8.3
dBm
Output P1dB
OP1dB
9.0
8.5
7.5
11.8
10.9
10.6
13.5
12.6
12.0
dBm
Input Return Loss Output Return Loss Reverse Isolation
1.8
3
V
4
Input IP3
IIP3
0.2
1.8
-0.2
-0.8
3.5
3.2
-0.8
3.9
3.5
Output IP3
OIP3
17.8
21.3
21.0
16.8
22.9
24.4
16.9
23.3
24.8
Stability
k
Application Note AN207, Rev. 1.0
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2010-06-28
Measured @ 1575MHz
In-band, f1=1575MHz, f2=1576MHz, dBm Pin=-30dBm dBm --
>1
Note/Test Condition
Unconditionally stable from DC to 10GHz
BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results
Table 4
Summary of Measurement Results for WLAN/WiMax 2300MHz to 2700MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
2300...2700
MHz
DC Voltage
Vcc
DC Current
Icc
6
10
20
6
10
20
6
10
20
mA
Gain
G
15.8
17.7
19.4
15.6
17.5
19.5
16.1
17.7
19.6
dB
Pin=-30dBm
Noise Figure
NF
1.4
1.3
1.45
1.5
1.4
1.45
1.45
1.35
1.45
dB
SMA and PCB loss of 0.1 dB included
RLin
9.3
10.5
10.3
9.75
11.0
11.0
9.5
10.9
11.0
dB
Pin=-30dBm
RLout
9.6
12.8
17.8
8.8
11.9
17.3
9.75
12.6
17.4
dB
Pin=-30dBm
IRev
22.7
24.2
26.2
22.7
24.1
26.3
22.7
24.1
26.3
dB
Pin=-30dBm
Input P1dB
IP1dB
-6.7
-9.3
-11.9
-4.0
-6.9
-9.1
-1.9
-4.9
-7.6
dBm
Output P1dB
OP1dB
8.1
7.4
6.5
10.6
9.6
9.4
13.2
11.8
11.0
dBm
Input Return Loss Output Return Loss Reverse Isolation
1.8V
3V
V
4V
Input IP3
IIP3
0.2
3.8
0.5
-1.2
4.6
4.0
-0.8
5.6
5.2
Output IP3
OIP3
16.0
21.5
19.9
14.4
12.9
15.5
15.3
23.3
14.4
Stability
k
Application Note AN207, Rev. 1.0
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Measured @ 2700MHz
In-band, f1=2699MHz, f2=2700MHz, dBm Pin=-30dBm dBm --
>1
Note/Test Condition
Unconditionally stable from DC to 10GHz
BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results
Table 5
Summary of Measurement Results for WiMax 3300MHz to 3700MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
3300…3700
MHz
DC Voltage
Vcc
DC Current
Icc
6
10
20
6
10
20
6
10
20
mA
Gain
G
14.3
16.1
17.6
14.2
16.1
17.8
14.5
16.1
17.9
dB
Pin=-30dBm
Noise Figure
NF
1.6
1.45
1.6
1.65
1.5
1.6
1.65
1.5
1.65
dB
SMA and PCB loss of 0.1 dB included
RLin
8.3
9.0
9.0
8.0
9.1
9.7
8.4
9.3
9.3
dB
Pin=-30dBm
RLout
8.9
12.6
15.7
7.5
9.5
11.8
9.3
10.6
15.8
dB
Pin=-30dBm
IRev
23.7
25.2
27.1
24.1
25.3
27.3
23.7
25.2
27.2
dB
Pin=-30dBm
Input P1dB
IP1dB
-5.6
-8.1
-11.0
-3.0
-5.9
-8.3
-0.8
-4.1
-6.7
dBm
Output P1dB
OP1dB
7.7
7.0
5.6
10.2
9.2
8.5
12.7
11.0
10.2
dBm
Input Return Loss Output Return Loss Reverse Isolation
1.8V
3V
V
4V
Input IP3
IIP3
1.3
4.0
1.3
0.3
5.1
4.3
0.1
6.4
5.7
Output IP3
OIP3
15.6
20.1
18.9
14.5
21.2
22.1
14.6
22.5
23.6
Stability
k
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Measured @3700MHz
In-band, f1=3699MHz, f2=3700MHz, dBm Pin=-30dBm dBm --
>1
Note/Test Condition
Unconditionally stable from DC to 10GHz
BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD Application Schematic
4
BGB741L7ESD Application Schematic
Figure 3
Schematics of the BGB741L7ESD for 300 MHz to 5GHz applications.
Table 6
Bill-of-Materials
Symbol
Value
Unit
Size
Manufacturer
C1
100
pF
0402
Various
DC block/Input matching
C2
1
uF
0402
Various
RF grounding
C3
1
uF
0402
Various
RF grounding
C4
100
pF
0402
Various
DC block/Output matching
L1
27
nH
0402
Murata LQG15A
DC feed/ Input matching
L2
27
nH
0402
Murata LQG15A
DC feed/Output matching
Rext
0…∞
Ω
0402
Various
Bias current/voltage setting (please refer to Figure 4)
R1
0
Ω
0402
Various
Jumper, not used
N1
BGB741L7
TSLP-7-1
Infineon Technologies
SiGe:C MMIC LNA
Application Note AN207, Rev. 1.0
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Comment
2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD Application Schematic
4.1
Bias Current/Voltage Configuration
Figure 4
Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing.
This graph shows how to find the right external resistor Rext (see Figure 1) to get the working point needed for the desired application. The biasing point is important to set-up since, it affects all the signal parameters like S-parameters, linearity in Power (P1dB), linearity in frequency (IIP3) and the Noise generated by the circuit (Please refer to the table 2,3,4 and 5 for performances comparisons) .
Application Note AN207, Rev. 1.0
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BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V
5
Measured Graphs for 1.8V
Insertion Power Gain at 1V8 25
1.8V 6mA
1.8V 10mA
1.8V 20mA
20
15
10 0
Figure 5
1000
2000 3000 Frequency (MHz)
4000
5000
Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Noise figure at 1V8 2
1.8V 6mA
1.8
1.8V 10mA
1.8V 20mA
1.6
1.4
1.2
1 0
Figure 6
1000
2000 3000 Frequency (MHz)
4000
5000
Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Application Note AN207, Rev. 1.0
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BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V
Input Matching at 1V8 0
1.8V 6mA
1.8V 10mA
1.8V 20mA
2000 2500 3000 Frequency (MHz)
3500
-5
-10
-15
-20 0
Figure 7
500
1000
1500
4000
4500
5000
Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Output Matching at 1V8 0 1.8V 6mA
1.8V 10mA
1.8V 20mA
-5
-10
-15
-20 0
Figure 8
500
1000
1500
2000 2500 3000 Frequency (MHz)
3500
4000
4500
5000
Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Application Note AN207, Rev. 1.0
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BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V
Reverse Isolation at 1V8 30
25
20 1.8V 6mA
1.8V 10mA
1.8V 20mA
15 0
Figure 9
500
1000
1500
2000 2500 3000 Frequency (MHz)
3500
4000
4500
5000
Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Input 1dB compression point at 1V8 5
1.8V 6mA
1.8V 10mA
1.8V 20mA
0
-5
-10
-15
-20 0
Figure 10
1000
2000 3000 Frequency (MHz)
4000
5000
Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V
Input 3rd order Intercept point at 1V8 10
1.8V 6mA
1.8V 10mA
1.8V 20mA
5
0
-5
-10 0
Figure 11
1000
2000 3000 Frequency (MHz)
4000
5000
rd
Input 3 interception point of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V.
Stability K Factor at 1V8 5
4
3
2
1 1.8V 6mA
1.8V 10mA
1.8V 20mA
0 0
Figure 12
2000
4000 6000 Frequency (MHz)
8000
10000
Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V
6
Measured Graphs for 3.0V
Insertion Power Gain at 3V 25
3V 6mA
3V 10mA
3V 20mA
20
15
10 0
Figure 13
1000
2000 3000 Frequency (MHz)
4000
5000
Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Noise figure at 3V 2
3V 6mA
1.8
3V 10mA
3V 20mA
1.6
1.4
1.2
1 0
Figure 14
1000
2000 3000 Frequency (MHz)
4000
5000
Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V
Input Matching at 3V 0
3V 6mA
3V 10mA
3V 20mA
2000 2500 3000 Frequency (MHz)
3500
-5
-10
-15
-20 0
Figure 15
500
1000
1500
4000
4500
5000
Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Output Matching at 3V 0 3V 6mA
3V 10mA
3V 20mA
-5
-10
-15
-20 0
Figure 16
500
1000
1500
2000 2500 3000 Frequency (MHz)
3500
4000
4500
5000
Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V
Reverse Isolation at 3V 30
25
20
3V 6mA
3V 10mA
2000 2500 3000 Frequency (MHz)
3500
3V 20mA
15 0
Figure 17
500
1000
1500
4000
4500
5000
Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Input 1dB compression point at 3V 5
3V 6mA
3V 10mA
3V 20mA
0
-5
-10
-15
-20 0
Figure 18
1000
2000 3000 Frequency (MHz)
4000
5000
Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V
Input 3rd order Intercept point at 3V 10
5
0
-5
3V 6mA
3V 10mA
3V 20mA
-10 0
Figure 19
1000
2000 3000 Frequency (MHz)
4000
5000
rd
Input 3 intercept point of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V.
Stability K Factor at 3V 5
4
3
2
1
3V 6mA
3V 10mA
3V 20mA
0 0
Figure 20
2000
4000 6000 Frequency (MHz)
8000
10000
Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V
7
Measured Graphs for 4.0V
Insertion Power Gain at 4V 25
4V 6mA
4V 10mA
4V 20mA
20
15
10 0
Figure 21
1000
2000 3000 Frequency (MHz)
4000
5000
Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Noise figure at 4V 2
4V 6mA
1.8
4V 10mA
4V 20mA
1.6
1.4
1.2
1 0
Figure 22
1000
2000 3000 Frequency (MHz)
4000
5000
Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V
Input Matching at 4V 0
4V 6mA
4V 10mA
4V 20mA
2000 2500 3000 Frequency (MHz)
3500
-5
-10
-15
-20 0
Figure 23
500
1000
1500
4000
4500
5000
Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Output Matching at 4V 0 4V 6mA
-5
4V 10mA
4V 20mA
-10 -15 -20 -25 -30 0
Figure 24
500
1000
1500
2000 2500 3000 Frequency (MHz)
3500
4000
4500
5000
Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V
Reverse Isolation at 4V 30
25
4V 6mA
20
4V 10mA
4V 20mA
15 0
Figure 25
500
1000
1500
2000 2500 3000 Frequency (MHz)
3500
4000
4500
5000
Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Input 1dB compression point at 4V 5
4V 6mA
4V 10mA
4V 20mA
0
-5
-10
-15
-20 0
Figure 26
1000
2000 3000 Frequency (MHz)
4000
5000
Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V
Input 3rd order Intercept point at 4V 10
5
0
4V 6mA
-5
4V 10mA
4V 20mA
-10 0
Figure 27
1000
2000 3000 Frequency (MHz)
4000
5000
rd
Input 3 intercept point of the BGB741L7ESD from 300MHz to 5GHz applications 4.0V.
Stability K Factor at 4V 5
4
3
2
1
4V 6mA
4V 10mA
4V 20mA
0 0
Figure 28
2000
4000 6000 Frequency (MHz)
8000
10000
Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 4.0V.
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Evaluation Board and layout Information
8
Evaluation Board and layout Information
Figure 29
Photo picture of Evaluation Board
Figure 30
PCB Layer Information
Application Note AN207, Rev. 1.0
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2010-06-28
BGB741L7ESD for 300MHz to 5GHz Applications Authors
Authors Anthony Thomas, Engineer in Application Engineering of “RF and Protection Devices” Dr. Lin Chih-I, Senior Staff Engineer of Technical Marketing of “RF and Protection Devices”
Application Note AN207, Rev. 1.0
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2010-06-28
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Published by Infineon Technologies AG
AN207
