Transcript
BF P650 Dri v er Amplifier fo r 900 MHz I S M Applic atio ns
Application Note AN208 Revision: Rev. 1.0 2010-08-06
RF and Protecti on Devi c es
Edition 2010-08-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP650 Driver Amplifier for 900MHz ISM Applications
Application Note AN208 Revision History: 2010-08-06 Previous Revision: no previous revision Page
Subjects (major changes since last revision)
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BFP650 Driver Amplifier for 900MHz ISM Applications List of Content, Figures and Tables
Table of Content 1
Introduction ........................................................................................................................................5
2
Application Information .....................................................................................................................8
3
Typical Measurement Results...........................................................................................................9
4
Measured Graphs .............................................................................................................................10
5
Evaluation Board and layout Information......................................................................................14 Authors..............................................................................................................................................15
List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14
BFP650 in SOT343 Package ...............................................................................................................5 Application Diagram of a RX-TX base station......................................................................................6 Power transmission using BFP650 for 900MHz application ................................................................7 Schematics of the application circuit ....................................................................................................8 Insertion power gain of the BFP650 driver for 900MHz application...................................................10 Input 1dB Compression point of the BFP650 driver for 900MHz application ....................................10 Input matching of the BFP650 driver for 900MHz application ...........................................................11 Output matching of the BFP650 driver for 900MHz application.........................................................11 Reverse isolation of the BFP650 driver for 900MHz application .......................................................12 Stability K-factor of the BFP650 driver for 900MHz application.........................................................12 rd 3 order intercept point of the BFP650 driver for 900MHz application ..............................................13 Input and output Z-Parameters of the BFP650 driver for 900MHz application ..................................13 Photo Picture of Evaluation Board .....................................................................................................14 PCB Layer Information .......................................................................................................................14
List of Tables Table 1 Table 2 Table 3
Pin definition.........................................................................................................................................5 Bill-of-Materials.....................................................................................................................................8 Summary of Measurement results (at room temperature) ...................................................................9
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BFP650 Driver Amplifier for 900MHz ISM Applications Introduction
1
Introduction
1.1
Features
• • •
For High output power drivers Ideal for low phase noise oscillators 70GHz ft Silicon Germanium Technology
Figure 1
Table 1 Pin
BFP650 in SOT343 Package
Pin definition Pin name
comments
1
B
Base of the BFP650 transistor
2
E
Emitter of the BFP650 transistor
3
C
Collector of the BFP650 transistor
4
E
Emitter of the BFP650 transistor
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BFP650 Driver Amplifier for 900MHz ISM Applications Introduction
1.2
Applications
BFP650 from Infineon Technologies is an SiGe:C Heterojunction bipolar transistor dedicated for high power driver amplifier applications. Thus, this component fits to many applications related to signal transmission like GSM/UMTS/Edge/LTE/WCDMA Base stations. On those conditions of use, the transmission module needs a strong signal and moreover, a good linearity in order to achieve the GSM/UMTS/Edge/LTE/WCDMA standards requirements. This documentation presents the BFP650 performance in a driver configuration for 900MHz application. This structure can also be used for 868 MHz ISM band applications and Zigbee. The following schematic presents a GSM/UMTS/Edge/LTE/WCDMA RX-TX base station structure. The amplifier structure using BFP650 is in driver configuration. That means that the amplifier is placed in front of a power amplifier. In this manner, the amplifier uses a higher current to provide high linearity characteristics. Such structure is essential in order to send a strong power signal to the receiver part. On figure 2, the diagram presents a wide range of Infineon components able to fit to a base station application.
Figure 2
Application Diagram of a RX-TX base station
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BFP650 Driver Amplifier for 900MHz ISM Applications Introduction
1.3
Linearity Consideration
Infineon’s BFP650 shows a high linearity behaviour and presents an input 1dB compression point of 5.9 dBm in the application circuit.. This power linearity has to be high enough in order to amplify the signal linearly. A too small input 1dB compression point would limit the gain of the first stage and thus, create a power loss on the transmission chain (Please see the figure 3). It is also the same case for the output of the driver if this one has too high 1dB compression Point. In such configuration, the Power amplifier would limit the power of the signal. Therefore, the output 1dB compression point power of a stage has to be lower than the input 1dB compression point power of the next stage.
Figure 3
Power transmission using BFP650 for 900MHz application
This application note provides the actual results of the BFP650 as driver from Infineon Technologies for 900MHz applications. This driver brings a gain of about 24.3 dB with a noise figure of about 2.4 dB (SMA connectors and PCB losses of 0.10 dB included) at the frequency of 900MHz. Furthermore, this device provides an unconditional stability from 0 up to 10 GHz. The circuit is matched at Input to 50Ω with an input return loss better than13 dB and an output return loss of 10.0 dB (please refer to table 1). The output -1dB compression point is measured as high as 17.3 dBm. Using two tones separated of 1MHz at 900MHz, the input 3rd order intercept point (IIP3) reaches +6.35 dBm.
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BFP650 Driver Amplifier for 900MHz ISM Applications Application Information
2
Application Information
2.1
Schematics
Figure 4
Schematics of the application circuit
Table 2
Bill-of-Materials
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
47
pF
0402
Various
DC Block/input matching
C2
6.2
pF
0402
Various
DC Block/input matching
C3
22
nF
0402
Various
RF to ground
C4
22
nF
0402
Various
RF to ground
C5
47
pF
0402
Various
DC Block/ output matching
L1
4.7
nH
0402
Murata LQG series
Input matching
L2
33
nH
0402
Murata LQG series
DC feed/input matching
L3
7.5
nH
0402
Murata LQG series
DC feed/output matching
R1
3.9
kΩ
0402
Various
Base collector settings
R2
0
Ω
0402
Various
Jumper
R3
2.7
Ω
0402
Various
DC feed to collector / stability
Q1
Application Note AN208, Rev. 1.0
SOT343
Infineon Technologies SiGe C: bipolar transistor
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BFP650 Driver Amplifier for 900MHz ISM Applications Typical Measurement Results
3
Typical Measurement Results
Table 3
Summary of Measurement results (at room temperature) Vcc=2.8V, Ic=76mA, freq=900MHz Parameter
Symbol
Value
Unit
Frequency Range
Freq
900
MHz
DC Voltage
Vcc
2.8
V
DC Current
Icc
76
mA
Gain
G
24.3
dB
Input P1dB
IP1dB
-5.9
dBm
Output P1dB
OP1dB
17.3
dBm
Input Return Loss
RLin
13.2
dB
Output Return Loss
RLout
10.0
dB
Reverse Isolation
IRev
28.7
dB
Input IP3
IIP3
6.35
dBm
Output IP3
OIP3
30.65
dBm
Noise Figure
NF
2.4
dB
Stability
k
>1
--
Comment/Test Condition
Input Power sweep from Pin=-30…0dBm Input Power Pin=-30dBm
Pin=-30dBm, f1=900MHz, f2=901MHz Unconditionnally stable from 0 to 10GHz
Note: the measurements showed in Table 3 are including the PCB and SMA losses of 0.1dB.
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BFP650 Driver Amplifier for 900MHz ISM Applications Measured Graphs
4
Measured Graphs
Insertion Power Gain InBand
30
900 MHz 24.33 dB
25 20 15 10 5 0 0
Figure 5
1000
2000
3000 4000 Frequency (MHz)
5000
6000
Insertion power gain of the BFP650 driver for 900MHz application
Compression point at 1dB
30 -30 dBm 24.22 dB
-5.867 dBm 23.22 dB
Gain(dB)
25
20
15
10 -30
Figure 6
-25
-20
-15 Pin (dBm)
-10
-5
0
Input 1dB Compression point of the BFP650 driver for 900MHz application
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BFP650 Driver Amplifier for 900MHz ISM Applications Measured Graphs
Input Matching
0
-5
-10 900 MHz -13.24 dB
-15
-20
-25 0
Figure 7
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Frequency (MHz)
Input matching of the BFP650 driver for 900MHz application
Output Matching
0 -5 -10
900 MHz -9.999 dB
-15 -20 -25 -30 0
Figure 8
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Frequency (MHz)
Output matching of the BFP650 driver for 900MHz application
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BFP650 Driver Amplifier for 900MHz ISM Applications Measured Graphs
Reverse Isolation
50
40
30
900 MHz 28.72 dB
20
10
0 0
Figure 9
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Frequency (MHz)
Reverse isolation of the BFP650 driver for 900MHz application
Stability K Factor
5
4
3
696.81 MHz 1.025
2
1
0 0
Figure 10
2000
4000 6000 Frequency (MHz)
8000
10000
Stability K-factor of the BFP650 driver for 900MHz application
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BFP650 Driver Amplifier for 900MHz ISM Applications Measured Graphs
Figure 11
rd
3 order intercept point of the BFP650 driver for 900MHz application
Z Parameters Input output matching 0.8
1.0
Swp Max 910MHz 2.
0
6 0.
Z11
0.
4
Z22
3.
0
0 4.
10.0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
0.2
900 MHz r 0.882519 x -0.392331
5.0
900 MHz r 1.74593 x -0.468807
-10.0
2
-4 .0 -5. 0 .0
4
Figure 12
-2
-1.0
-0.8
-0 .6
.0
. -0
-3
-0.
Swp Min 890MHz
Input and output Z-Parameters of the BFP650 driver for 900MHz application
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BFP650 Driver Amplifier for 900MHz ISM Applications Evaluation Board and layout Information
5
Evaluation Board and layout Information
Figure 13
Photo Picture of Evaluation Board
Figure 14
PCB Layer Information
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BFP650 Driver Amplifier for 900MHz ISM Applications Authors
Authors Anthony Thomas, RF Engineer of Business Unit “RF and Protection Devices” Dr.Chih-I Lin, Senior Staff engineer of Business Unit “RF and Protection Devices”
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