Analog Devices Welcomes Hittite Microwave Corporation

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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC715* Product Page Quick Links Last Content Update: 08/30/2016 Comparable Parts Design Resources View a parametric search of comparable parts • HMC715LP3 Evaluation Board • • • • Documentation Discussions Data Sheet • HMC715 Data Sheet View all HMC715 EngineerZone Discussions Evaluation Kits HMC715 Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints Sample and Buy Tools and Simulations Visit the product page to see pricing options • HMC715 S-Parameter Technical Support Reference Materials Quality Documentation • Package/Assembly Qualification Test Report: LP2, LP2C, LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364) • Semiconductor Qualification Test Report: PHEMT-D (QTR: 2013-00254) Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. Note: Dynamic changes to the content on this page does not constitute a change to the revision number of the product data sheet. This content may be frequently modified. THIS PAGE INTENTIONALLY LEFT BLANK HMC715LP3 / 715LP3E v01.0808 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Typical Applications Features The HMC715LP3(E) is ideal for: Noise Figure: 0.9 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure Output IP3: +33 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 • Access Points Functional Diagram General Description The HMC715LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 2.1 and 2.9 GHz. The amplifier has been optimized to provide 0.9 dB noise figure, 19 dB gain and +33 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC715LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifications TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1] Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 2.1 - 2.9 14.5 Gain Variation Over Temperature Vdd = +5V Typ. Max. Min. 2.3 - 2.7 18 15 0.01 Min. 15.5 16.5 MHz 19 dB 0.01 dB/ °C 0.9 11.5 11 11.5 11 dB 14 13.5 12.5 12 dB 19.5 dBm 10.5 14.5 12.5 15 15 1.2 Units Noise Figure Output Power for 1 dB Compression (P1dB) 0.9 Max. 2.3 - 2.7 19 0.01 1.2 Typ. Input Return Loss Output Return Loss 0.9 Max. 2.1 - 2.9 18 0.01 1.2 Typ. 19 0.9 16.5 1.2 dB Saturated Output Power (Psat) 16 16.5 20 20.5 dBm Output Third Order Intercept (IP3) 28 28.5 33 33.5 dBm Supply Current (Idd) 47 65 47 65 95 126 95 126 mA [1] Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Broadband Gain & Return Loss [1] [2] 30 22 12 6 S11 0 GAIN (dB) RESPONSE (dB) 24 S21 18 S22 -6 -12 20 18 +25C +85C -40C 16 -18 5V 3V -24 -30 0.5 14 12 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 5 Gain vs. Temperature [2] 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Input Return Loss vs. Temperature [1] 26 0 24 RETURN LOSS (dB) +25C +85C -40C 22 20 18 16 +25C +85C -40C -5 -10 Amplifiers - Low Noise - SMT 26 24 GAIN (dB) 7 Gain vs. Temperature [1] -15 14 12 2 2.2 2.4 2.6 2.8 -20 3 2 2.2 FREQUENCY (GHz) Output Return Loss vs. Temperature [1] 2.4 2.6 FREQUENCY (GHz) 2.8 3 Reverse Isolation vs. Temperature [1] -20 0 ISOLATION (dB) RETURN LOSS (dB) -25 +25C +85C -40C -5 -10 -30 -35 +25C +85C -40C -40 -15 -45 -50 -20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 [1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 47kΩ For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC715LP3 / 715LP3E v01.0808 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 23 +85C 21 +25C Vdd=5V 19 1.2 P1dB (dBm) NOISE FIGURE (dB) 1.5 0.9 0.6 +25C +85C -40C 11 0 9 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 Psat vs. Temperature [1] [2] 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Output IP3 vs. Temperature [1] [2] 24 44 41 22 Vdd=5V +25C +85C -40C 38 IP3 (dBm) 20 18 16 14 35 Vdd=5V 32 29 26 +25C +85C -40C Vdd=3V 23 Vdd=3V 10 20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 Output IP3 and Supply Current vs. Supply Voltage @ 2300 MHz [3] 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Output IP3 and Supply Current vs. Supply Voltage @ 2700 MHz [3] 38 125 34 110 36 110 32 95 34 95 30 80 32 80 28 65 30 65 Idd IP3 26 50 IP3 (dBm) 125 Idd IP3 28 50 24 35 26 35 22 20 24 20 20 5 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 47kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 47kΩ for Vdd = 3V 2.7 5 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [4] Measurement reference plane shown on evaluation PCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 36 Idd (mA) IP3 (dBm) Vdd=3V 15 -40C Vdd=5V Vdd=3V 12 7-3 17 13 0.3 Psat (dBm) Amplifiers - Low Noise - SMT 1.8 HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 Pout Gain PAE -5 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 0 10 5 0 30 30 25 25 20 15 10 5 0 Pout Gain PAE -5 -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 4 1.4 -2 1 20 15 10 5 0 Pout Gain PAE -5 -15 -10 -5 INPUT POWER (dBm) 0 5 1.3 22 18 1.1 16 1 14 0.9 12 0.8 10 0.6 8 4.3 1.2 P1dB Gain 18 1.1 16 1 14 0.9 0.7 NF 3.9 20 4.7 5.1 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 47kΩ NOISE FIGURE (dB) 1.2 NOISE FIGURE (dB) 20 3.5 -11 -8 -5 INPUT POWER (dBm) 1.3 P1dB Gain 3.1 -14 Gain, Power & Noise Figure vs. Supply Voltage @ 2700 MHz [3] 24 2.7 -17 -10 -20 7 Gain, Power & Noise Figure vs. Supply Voltage @ 2300 MHz [3] 22 Pout Gain PAE -5 35 Pout (dBm), Gain (dB), PAE (%) Pout (dBm), Gain (dB), PAE (%) 15 Power Compression @ 2700 MHz [2] Power Compression @ 2700 MHz [1] GAIN (dB) & P1dB (dBm) 20 -10 -20 2 GAIN (dB) & P1dB (dBm) Pout (dBm), Gain (dB), PAE (%) 20 Amplifiers - Low Noise - SMT 25 25 -10 -20 7 Power Compression @ 2300 MHz [2] Power Compression @ 2300 MHz [1] NF 0.8 12 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 47kΩ for Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC715LP3 / 715LP3E v01.0808 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Gain, Noise Figure & Rbias @ 2300 MHz Output IP3 vs. Rbias @ 2300 MHz 29 GAIN (dB) IP3 (dBm) 32 26 23 20 100 Vdd=3V Vdd=5V 1000 10000 18 1 Vdd=3V Vdd=5V 16 14 0.9 12 0.85 0.8 1000 10000 GAIN (dB) 32 29 20 1.4 18 1.3 16 1.2 14 1.1 12 1 10 10000 Rbias (Ohms) 100000 Gain, Noise Figure & Rbias @ 2700 MHz Vdd=3V Vdd=5V 1000 0.95 100000 Vdd=3V Vdd=5V 0.8 8 100 0.9 1000 10000 100000 Rbias (Ohms) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) IP3 (dBm) 1.05 100 38 26 7-5 20 Rbias (Ohms) Output IP3 vs. Rbias @ 2700 MHz 23 100 1.1 10 100000 Rbias (Ohms) 35 22 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 35 HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Rbias (Ohms) Vdd (V) 3V Idd (mA) Min Max Recommended 2K 28 1.8k [1] Open Circuit 5.6K 40 47K 47 270 61 820 81 2K 95 5V 0 Open Circuit [1] With Vdd= 3V and Rbias < 1.8k Ohms may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) +5.5V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 11.1 mW/°C above 85 °C) 0.72 W Thermal Resistance (channel to ground paddle) 90 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Amplifiers - Low Noise - SMT 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values Typical Supply Current vs. Supply Voltage (Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V) Vdd (V) Idd (mA) 2.7 35 3.0 47 3.3 57 4.5 80 5.0 95 5.5 110 Note: Amplifier will operate over full voltage ranges shown above. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC715LP3 / 715LP3E v01.0808 Outline Drawing Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC715LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC715LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 715 XXXX 715 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Function Description 1, 3 - 7, 9, 10, 12 - 14, 16 Pin Number N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled. See application circuit for off chip component. 11 RFOUT This pin is DC coupled. See application circuit for off chip component. 8 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT 7 Pin Descriptions 7-8 HMC715LP3 / 715LP3E v01.0808 Application Circuit Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122492 Item J1, J2 Description PCB Mount SMA RF Connector J3, J4 DC Pin C1 100pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 0.47µF Capacitor, 0603 Pkg. C4 68pF Capacitor, 0402 Pkg. C5 3.3pF Capacitor, 0402 Pkg. R1 2kΩ Resistor, 0402 Pkg. U1 HMC715LP3(E) Amplifier PCB [2] 122490 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. or Arlon 25R For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10