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HMC5879LS7 v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
AMPLIFIERS - LINEAR & POWER - SMT
9
Typical Applications
Features
The HMC5879LS7 is ideal for:
Saturated Output Power: +37 dBm @ 22% PAE
• Point-to-Point Radios
High Output IP3: +44 dBm
• Point-to-Multi-Point Radios
High Gain: 28 dB
• VSAT & SATCOM
DC Supply: +7V @ 2400 mA
• Military & Space
No External Matching Required 18 Lead 7x7 mm SMT Package: 49 mm2
Functional Diagram
General Description The HMC5879LS7 is a 4 stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC5879LS7 provides 28 dB of gain, +37 dBm of saturated output power, and 22% PAE from a +7V supply. The HMC5879LS7 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications.
Electrical Specifi cations TA = +25° C, Vdd1, 2 , 3, 4 , 5, 6, 7, 8 = +7V, Idd = 2400mA [1] Parameter
Min.
Frequency Range Gain
24
Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept
Typ. 12-16
(IP3)[2]
Total Supply Current (Idd)
34.5
Max.
Units GHz
27
dB
0.06
dB/ °C
13
dB
13
dB
36
dBm
37
dBm
44
dBm
2400
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400mA typical. [2] Measurement taken at +7V @ 2400mA, Pout / Tone = +22 dBm
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5879LS7 v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency
Gain vs. Temperature
40
36
30
S21 S11 S22
10 0
28
-10 +25C +85C -40C
20 -20 -30
16 10
11
12
13 14 15 FREQUENCY (GHz)
16
17
18
11
13
14
15
16
17
Output Return Loss vs. Temperature 0
0 +25C +85C -40C
+25C +85C -40C
-4 RETURN LOSS (dB)
-4 RETURN LOSS (dB)
12
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-8
-12
-16
-8 -12 -16 -20
-20
-24 11
12
13
14
15
16
11
17
12
13
FREQUENCY (GHz)
14
15
16
17
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs. Supply Voltage
40
40 +25C +85C -40C
5V 6V 7V
38 P1dB (dBm)
38 P1dB (dBm)
9
24
36
34
32
AMPLIFIERS - LINEAR & POWER - SMT
GAIN (dB)
RESPONSE (dB)
32 20
36
34
32
30
30 12
13
14 FREQUENCY (GHz)
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-2
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Psat vs. Supply Voltage 40
38
38 Psat (dBm)
40
36
34
34
32
30
30 12
13
14
15
16
12
13
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
15
16
15
16
Psat vs. Supply Current (Idd)
40
40
38
38 Psat (dBm)
P1dB (dBm)
14 FREQUENCY (GHz)
36
34 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA
32
36
34 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA
32
30
30 12
13
14
15
16
12
13
FREQUENCY (GHz)
Output IP3 vs. Temperature, Pout/Tone = +22 dBm
Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 50
45
45 IP3 (dBm)
50
40
14 FREQUENCY (GHz)
+25C +85C -40C
35
40 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA
35
30
30 12
13
14 FREQUENCY (GHz)
9-3
36
5V 6V 7V
+25C +85C -40C
32
IP3 (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
9
Psat (dBm)
Psat vs. Temperature
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +5V
50
80 70 60
40
40 30
5V 6V 7V
35
50
10 0
30 12
13
14
15
16
10
12
14
16
80
70
70
60
60
50
50
40 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
20
20
22
24
26
28
24
26
28
Output IM3 @ Vdd = +7V
80
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +6V
30
18
Pout/TONE (dBm)
FREQUENCY (GHz)
40 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
30 20
10
10
0
0 10
12
14
16
18
20
22
24
26
28
10
12
14
Pout/TONE (dBm)
18
20
22
Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%)
40 35 30 25 20
Pout Gain PAE
15 10 5 0 -10
16
Pout/TONE (dBm)
Power Compression @ 13 GHz Pout (dBm), GAIN (dB), PAE (%)
9
12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
20
-7
-4
-1
2
5
INPUT POWER (dBm)
8
11
14
35 30 25 20
AMPLIFIERS - LINEAR & POWER - SMT
IM3 (dBc)
IP3 (dBm)
45
Pout Gain PAE
15 10 5 0 -10
-7
-4
-1
2
5
8
11
14
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-4
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Reverse Isolation vs. Temperature 0
35
-10
30
-20 ISOLATION (dB)
40
25 20
Pout Gain PAE
15
+25C +85C -40C
-30 -40 -50
10
-60
5
-70
0 -10
-80 -7
-4
-1
2
5
8
11
11
14
12
13
Gain & Power vs. Supply Current @ 14 GHz
15
16
17
Gain & Power vs. Supply Voltage @ 14 GHz 50 Gain (dB), P1dB (dBm), Psat (dBm)
50 Gain P1dB Psat
45 40 35 30 25 20 1600
14
FREQUENCY (GHz)
INPUT POWER (dBm)
45
Gain P1dB Psat
40 35 30 25 20
1800
2000
2200
2400
5
5.5
Idd (mA)
6
6.5
7
Vdd (V)
Power Dissipation 20 18 POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
9
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 15 GHz
16 14 12 10
12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
8 6 4 2 0 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5879LS7 v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Drain Bias Voltage (Vdd1 - Vdd8)
+8V
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA) 2400
Gate Bias Voltage (Vgg1, Vgg2)
-3V to 0V
+5.0
RF Input Power (RFIN)
+27 dBm
+6.0
2400
Channel Temperature
150 °C
+7.0
2400
Continuous Pdiss (T= 85 °C) (derate 280 mW/°C above 85 °C)
18.20 W
Thermal Resistance (channel to ground paddle)
3.57 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 0, passed 150V
Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 2400 mA.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
9 AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
HMC5879LS7
ALUMINA, WHITE
Gold over Nickel
MSL3
H5879 XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-6
HMC5879LS7 v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
9
9-7
Pin Number
Function
1-4
Vdd8, Vdd6 Vdd4, Vdd2
10-13
Vdd1, Vdd3 Vdd5, Vdd7
Description
Interface Schematic
Drain bias for the amplifier. External bypass capacitors of 100pF, 0.01uF, and 4.7uF are required.
5, 9
Vgg1, Vgg2
Gate control for amplifier. External bypass capacitors of 100pF, 0.01uF, and 4.7uF are required. The pins are connected to each other internally. Either pin 5 or pin 9 can be used for gate bias.
6, 14, 15, 18
GND
These pin and the exposed ground paddle must be connected to RF/DC ground.
7
RFIN
This pin is DC coupled and matched to 50 Ohms over the operating frequency range.
8, 17
N/C
These pins are not connected internally, all data shown herein was measured with these pins connected to RF/DC ground externally.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms.
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5879LS7 v00.0111
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC5879LS7 [1] Item
Description
J1, J2
“K” Connector, SRI
J5, J6
DC Pin
C1 - C6, C20, C21, C23, C35
100 pF Capacitor, 0402 Pkg.
C7 - C12, C19, C25, C26, C34
10000 pF Capacitor, 0603 Pkg
C13 - C18, C29 C30, C31, C37
4.7uF Capacitor, Case A Pkg.
U1
HMC5879LS7 Amplifier
PCB [2]
128997-2 Eval Board
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
AMPLIFIERS - LINEAR & POWER - SMT
9
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-8
