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HMC7357LP5GE v00.0813
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Typical Applications
Features
The HMC7357LP5GE is ideal for:
+35 dBm Pout @ 34% PAE
• Point-to-Point Radios
High P1dB Output Power: +34 dBm
• Point-to-Multi-Point Radios
High Output IP3: +41.5 dBm
• VSAT & SATCOM
High Gain: 29 dB 50 Ohm Matched Input/Output Supply Voltage: Vdd = +8V @ 1200 mA 24-Lead 5x5 mm SMT Package
General Description
Functional Diagram
The HMC7357LP5GE is a three-stage GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply. With an excellent Output IP3 of +41.5 dBm, the HMC7357LP5GE is ideal for linear applications such as high capacity point-to-point and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms for ease of use. The HMC7357LP5GE is packaged in a leadless 5x5 mm plastic surface mount package and is compatible with surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C Vdd1 = Vdd2 = Vdd3 = Vdd4 = 8V, Idd = 1200 mA [1] Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
5.5 - 7 26.5
Gain Variation Over Temperature
29.5
Typ. 7 - 8.5
28
0.0214
Max.
Units GHz
31
dB
0.0234
dB/ °C dB
Input Return Loss
14
14
Output Return Loss
22
15
dB
34.5
dBm
Output Power for 1 dB Compression (P1dB)
31.5
Saturated Output Power (Psat)
34.5
31.5
35
35
dBm
Output Third Order Intercept (IP3)[2]
41.5
41.5
dBm
Total Supply Current (Idd)
1200
1200
mA
[1] Adjust Vgg between -2 to -0.4V to achieve Idd = 1200 mA typical. [2] Measurement taken at +8V @ 1200 mA, Pout / Tone = +20 dBm
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz
36
30
34
20
32
10
30
0 -10
28 26
-20
24
-30
22
-40 4
5
6
7
8
9
20 5.5
10
6
6.5
FREQUENCY (GHz) S21
7
7.5
8
8.5
FREQUENCY (GHz)
S11
S22
+25 C
Input Return Loss vs. Temperature
+85 C
-40 C
Output Return Loss vs. Temperature 0
0
-10 RESPONSE (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
-30 -20
-25 5.5
6
6.5
7
7.5
8
-40 5.5
8.5
6
6.5
FREQUENCY (GHz) +25 C
+85 C
-40 C
+25 C
40
38
38
36
36
34 32
28
28
7
7.5
8
8.5
26 5.5
6
+85 C
6.5
-40 C
+85 C
7
7.5
8
8.5
FREQUENCY (GHz)
FREQUENCY (GHz) +25 C
8.5
32 30
6.5
8
34
30
6
7.5
P1dB vs Supply Voltage
40
P1dB (dBm)
P1dB (dBm)
P1dB vs. Temperature
26 5.5
7
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - SMT
Gain vs. Temperature
40
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
-40 C
6V
7V
8V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Psat vs. Supply Voltage 40
38
38
36
36 Psat (dBm)
Psat (dBm)
40
34 32
34 32
30
30
28
28
26 5.5
6
6.5
7
7.5
8
26 5.5
8.5
6
6.5
+25 C
+85 C
6V
-40 C
P1dB vs. Supply Current 38
38
36
36 Psat (dBm)
40
34 32
30 28
7
7.5
8
26 5.5
8.5
1000 mA
6
1200 mA
6.5
46
44
44 IP3 (dBm)
IP3 (dBm)
46
42
40
38
38
7
7.5
8
8.5
36 5.5
6
+85 C
1000mA
6.5
FREQUENCY (GHz) +25 C
8
8.5
1200mA
42
40
6.5
7.5
Output IP3 vs. Supply Current, Pout/tone = +20 dBm 48
6
7
800 mA
48
36 5.5
8V
FREQUENCY (GHz)
Output IP3 vs. Temperature, Pout/tone = +20 dBm
3
7V
FREQUENCY (GHz) 800 mA
8.5
32
28
6.5
8
34
30
6
7.5
Psat vs. Supply Current
40
26 5.5
7
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Temperature
7
7.5
8
8.5
FREQUENCY (GHz) -40 C
800 mA
1000 mA
1200 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm
Output IM3 @ Vdd = +6V
48 46
60
IM3 (dBc)
IP3 (dBm)
44 42
50
40
40 30
38 36 5.5
20 6
6.5
7
7.5
8
8.5
10
12
14
16
FREQUENCY (GHz) 6V
7V
6 GHz
8V
20
22
24
7 GHz
8 GHz
Output IM3 @ Vdd = +8V
70
70
60
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd =+7V
50
40
30
50
40
30
20
20 10
12
14
16
18
20
22
24
10
12
14
16
Pout/TONE (dBm) 6 GHz
7 GHz
8 GHz
6 GHz
25
1200
10 5
1150
0 -4
-2
0
2
4
6
8
Gain Idd
7 GHz
8 GHz
10
1350
35 1300
30 25
1250
20 15
1200
10 5
1150
0 -10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
INPUT POWER (dBm) Pout
24
Idd (mA)
15
Idd (mA)
1250
20
Pout(dBm), GAIN(dB), PAE(%)
1300
30
-6
22
40
35
-8
20
Power Compression @ 7 GHz 1350
40
-10
18
Pout/TONE (dBm)
Power Compression @ 6 GHz Pout(dBm), GAIN(dB), PAE(%)
18
Pout/TONE (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
70
PAE
Pout
Gain
PAE
Idd
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Power Compression @ 8 GHz
Reverse Isolation vs. Temperature -40 1300
30
ISOLATION (dB)
Pout(dBm), GAIN(dB), PAE(%)
35
25 1250
20 15
Idd (mA)
1200
10 5
-50 -60 -70 -80
1150
0 -10
-8
-6
-4
-2
0
2
4
6
8
-90 5.5
10
INPUT POWER (dBm) Pout
Gain
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
PAE
Idd
+25 C
+85 C
-40 C
Gain & Power vs. Supply Voltage @ 7 GHz
Gain & Power vs. Supply Current @ 7 GHz 40
40 Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
-30
1350
40
35
30
25
20
15
35
30
25
20
15
800
1000
1200
6
7
Idd (mA) GAIN(dB)
8
Vdd (V)
P1dB(dBm)
Psat(dBm) GAIN(dB)
P1dB(dBm)
Psat(dBm)
Power Dissipation POWER DISSIPATION (W)
10 9 8 7 6 5 4 -10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm) 6 GHz
5
7 GHz
8 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+9 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
-2 to -0.4 Vdc
+6
1200
RF Input Power (RFIN)
+22 dBm
+7
1200
Channel Temperature
175 °C
+8
1200
Continuous Pdiss (T= 85 °C) (derate 133mW/°C above 85 °C)
12.6 W
Thermal Resistance (channel to ground paddle)
7.5 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 1A, passed 250V
Adjust Vgg to achieve Idd = 1200 mA
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC7357LP5GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
H7357 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pad Number
7
Function
Description
1, 4, 5, 6, 7, 9, 12, 13, 14, 17, 18, 19, 22, 24
N/C
These pins are not connected internally; however all data shown herein was measured with these pins connected to RF/DC ground externally.
2, 15
GND
These pins and exposed ground paddle must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled and matched to 50 Ohms.
8, 23
Vgg2, Vgg1
Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required. Apply Vgg bias to either pin 8 or pin 23.
10, 11, 20, 21
Vdd3, Vdd4, Vdd2, Vdd1
Drain bias voltage for the amplifier. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
8
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation PCB EV1HMC7357LP5 Item
Description
J1 - J4
"K" Connector, SRI
J7, J8
DC Pin
C2, C3, C9, C12, C16, C19
100 pF Capacitor, 0402 Pkg.
C1, C4, C10, C11, C15, C20
10000 pF Capacitor, 0402 Pkg.
C21, C22, C25, C27, C28, C30
4.7 uF Capacitor, Case A Pkg.
R1, R2
43.2 Ohm Resistor, 0402 Pkg
U1
HMC7357LP5GE Amplifier
PCB [2]
600-00901-00 Eval Board
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7357LP5GE v00.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
10
