Transcript
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC1016 v00.1111
Amplifiers - Linear & Power - Chip
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Typical Applications
Features
TheHMC1016 is ideal for:
P1dB Output Power: +24 dBm
• Point-to-Point Radios
Psat Output Power: +26 dBm
• Point-to-Multi-Point Radios
High Gain: 22 dB
• VSAT & SATCOM
Output IP3: +34 dBm
• Military & Space
Supply Voltage: Vdd = +6V @ 250 mA 50 Ohm Matched Input/Output Die Size: 0.90 x 2.22 x 0.1 mm
Functional Diagram
General Description The HMC1016 is a four stage GaAs PHEMT MMIC Medium Power Amplifier die which operates between 34 and 46.5 GHz. The amplifier provides 22 dB of gain, +26 dBm of saturated output power, and 17% PAE from a +6V supply. With up to +37 dBm IP3 the HMC1016 is ideal for high linearity applications in miltary and space as well as point-to-point and point-to-multi-point radios. The HMC1016 amplifier I/Os are internally matched facilitating integration into mutli-chip-modules (MCMs). All data shown herein was measured with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 250 mA [1] Parameter
Min.
Frequency Range
Max.
Min.
34 - 40
Gain
19
Gain Variation Over Temperature Input Return Loss Output Return Loss
22
21
Saturated Output Power (Psat) [2]
Total Supply Current
Typ. 40 - 46.5
20
Max.
Units GHz
23
dB
0.028
0.038
dB/ °C
13
18
dB
11
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Typ.
12
dB
24
dBm
26
26
dBm
34
34
dBm
250
250
mA
24
21
[1] Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. [2] Measurement taken at Pout / tone = +14 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Gain & Return Loss
Gain vs. Temperature
26
10 GAIN (dB)
RESPONSE (dB)
20
S21 S11 S22
0
18
-10 +25C +85C -55C
14
-20
10
-30 33
35
37
39 41 43 FREQUENCY (GHz)
45
47
49
33
35
37
41
43
45
47
49
Output Return Loss vs. Temperature
0
0 +25C +85C -55C
+25C +85C -55C
-5 RETURN LOSS (dB)
-5 -10 -15 -20
-10 -15 -20
-25 -30
-25 33
35
37
39
41
43
45
47
49
33
35
37
FREQUENCY (GHz)
39
41
43
45
47
49
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs Supply Voltage
30
30 +25C +85C -55C
28 26
28
5V 5.5V 6V
26
24
P1dB (dBm)
P1dB (dBm)
39
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
22
Amplifiers - Linear & Power - Chip
30
30
22 20
24 22 20
18
18
16
16
14
14 33
35
37
39
41
FREQUENCY (GHz)
43
45
47
33
35
37
39
41
43
45
47
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
30
28
28
26
26
24
24
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
30
22 20
+25C +85C -55C
18
20
5.0V 5.5V 6.0V
16
14
14 33
35
37
39
41
43
45
47
33
35
37
FREQUENCY (GHz)
30
28
28
26
26
24
24
Psat (dBm)
30
22 20 200 mA 225 mA 250 mA
43
45
47
43
45
47
45 46
47
22 200 mA 225 mA 250 mA
20 18
16
16
14
14 33
35
37
39
41
43
45
47
33
35
FREQUENCY (GHz)
39
41
Output IP3 vs. Supply Current, Pout/tone = +14 dBm
40
40
35
35
30
+25C +85C -55C
25
37
FREQUENCY (GHz)
IP3 (dBm)
IP3 (dBm)
41
Psat vs. Supply Current
P1dB vs. Supply Current
18
39
FREQUENCY (GHz)
Output IP3 vs. Temperature, Pout/tone = +14 dBm
30
200 mA 225 mA 250 mA
25
20
20 34
35 36 37
38 39 40
41
42 43 44
FREQUENCY (GHz)
3
22
18
16
P1dB (dBm)
Amplifiers - Linear & Power - Chip
Psat vs. Temperature
45 46
47
34
35 36 37
38 39 40
41
42 43 44
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Output IP3 vs. Supply Voltage, Pout/tone = +14 dBm
Output IM3 @ Vdd = +5V
40
50
35 IM3 (dBc)
IP3 (dBm)
40
30 5V 5.5V 6V
30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz
20
25 10 0
20 34
35 36 37
38 39 40
41
42 43 44
45 46
6
47
8
10
60
50
50
40
40
30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz
10
16
18
20
16
18
20
30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz
20 10
0
0 6
8
10
12
14
16
18
20
6
8
10
Pout/TONE (dBm)
14
Reverse Isolation vs. Temperature
35
0 Pout Gain PAE
30
-10 ISOLATION (dB)
25 20 15 10
+25C +85C -55C
-20 -30 -40 -50
5 0 -10
12
Pout/TONE (dBm)
Power Compression @ 40 GHz Pout (dBm), GAIN (dB), PAE (%)
14
Output IM3 @ Vdd = +6V
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd =+5.5V
20
12
Pout/TONE (dBm)
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
60
-60 -7
-4
-1
2
INPUT POWER (dBm)
5
8
33
35
37
39
41
43
45
47
49
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Gain & Power vs. Supply Current @ 40 GHz
Gain & Power vs. Supply Voltage @ 40 GHz 30
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
27
24
21 GAIN (dB) P1dB (dBm) Psat (dBm)
18
15 200
220
230
240
24
21 GAIN (dB) P1dB (dBm) Psat (dBm)
18
250
5
5.2
5.4
Idd (mA)
5.6
5.8
6
Vdd (V)
Power Dissipation 3 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz
2.5 2 1.5 1 0.5 0 -10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings Drain Bias Voltage (Vdd)
5
27
15 210
POWER DISSIPATION (W)
Amplifiers - Linear & Power - Chip
30
+7 Vdc
Gate Bias Voltage (Vgg)
-3 to 0 Vdc
RF Input Power (RFIN)
+15 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C) (derate 24 mW/°C above 85 °C)
1.57 W
Thermal Resistance (channel to die bottom)
41.3 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+5
250
+5.5
250
+6
250
Adjust Vgg1 to achieve Idd = 250 mA
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] For more information refer to the “Packaging Information” Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004” 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±0.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Amplifiers - Linear & Power - Chip
Outline Drawing
6
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Amplifiers - Linear & Power - Chip
Pad Descriptions
7
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2
Vgg
Gate control for PA. Adjust Vgg to achieve recommendedbias current. External bypass capacitors 100 pF, 10 nF, and 4.7 μF are required.
3
RFOUT
This pad is AC coupled and matched to 50 Ohms.
4, 5
Vdd1, Vdd2
Drain bias voltage. External bypass capacitors of 100pF, 10 nF, and 4.7uF are required for each pad.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Amplifiers - Linear & Power - Chip
Assembly Diagram
8
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1016 v00_1111
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Amplifiers - Linear & Power - Chip
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
10
