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HMC7229LS6 v00.0513
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Typical Applications
Features
The HMC7229LS6 is ideal for:
+32 dBm Pout @ 18% PAE
• Point-to-Point Radios
P1dB Output Power: +31.5 dBm
• Point-to-Multi-Point Radios
High Output IP3: +40 dBm
• VSAT & SATCOM
High Gain: 24 dB 50 Ohm Matched Input/Output Ceramic 6x6 mm High Frequency Air Cavity Package
Functional Diagram
General Description The HMC7229LS6 is a four-stage GaAs pHEMT MMIC 1 Watt Power Amplifier, with an integrated temperature compensated on-chip Power Detector, which operates between 37 and 40 GHz. The HMC7229LS6 provides 24 dB of gain, and +32 dBm of saturated output power at 18% PAE from a +6V supply. With an excellent IP3 of +40 dBm, the HMC7229LS6 is ideal for linear applications such as high capacity point-to-point or multi-point radios or VSAT/SATCOM applications demanding +32 dBm of efficient saturated output power. The RF I/Os are internally matched and DC blocked for ease of integration into higher level assemblies. The HMC7229LS6 is housed in a ceramic 6x6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with surface mount manufacturing techniques
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = +6V, Idd = 1200 mA [1] Parameter
Min.
Frequency Range
Typ. 37 - 40
Gain
21
Max.
Units GHz
24
dB
0.058
dB/°C
Input Return Loss
16
dB
Output Return Loss
14
dB
31.5
dBm
32
dBm
40
dBm
1200
mA
Gain Variation over Temperature
28.5
Output Power for P1dB Compression Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
[2]
Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical [2] Measurement taken at Pout / tone = +20dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
30
20
28
10
26
0
24
-10
22
-20
20 18
-30 35
36
37
38
39
40
41
37
42
38
S21
S11
+25 C
S22
40
-5
-10
-10
-20
-30
+85 C
-40 C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
-15
-20
-25
-40 37
38
39
37
40
38
+25 C
+85 C
39
40
FREQUENCY (GHz)
FREQUENCY (GHz) -40 C
+25 C
+85 C
-40 C
P1dB vs. Supply Voltage
P1dB vs. Temperature 34
34
32
32 P1dB (dBm)
P1dB (dBm)
39
FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - SMT
Gain vs. Temperature
30
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
30
28
30
28
26
26 37
38
39
40
37
38
FREQUENCY (GHz) +25 C
+85 C
39
40
FREQUENCY (GHz) -40 C
5V
5.5V
6V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Psat vs. Supply Voltage 34
32
32 Psat (dBm)
Psat (dBm)
34
30
30
28
28
26
26 37
38
39
37
40
38
+25 C
+85 C
5V
-40 C
34
32
32 Psat (dBm)
34
30
5.5V
6V
30
28
28
26
26 37
38
39
37
40
38
800 mA
1000 mA
39
40
FREQUENCY (GHz)
FREQUENCY (GHz) 1200 mA
800 mA
1000 mA
1200 mA
Output IP3 vs. Supply Current, Pout/tone = +20 dBm
42
42
40
40 IP3 (dBm)
IP3 (dBm)
40
Psat vs. Supply Current
P1dB vs. Supply Current
Output IP3 vs. Temperature, Pout/tone = +20 dBm
38
38
36
36
34
34 37
38
39
40
37
38
+25 C
+85 C
39
40
FREQUENCY (GHz)
FREQUENCY (GHz)
3
39
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Temperature
-40 C
800 mA
1000 mA
1200 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm
Output IM3 @ Vdd = +5V
42
60
IM3 (dBc)
40 IP3 (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
70
38
50
40
36 30
34
20 37
38
39
40
10
12
14
16
FREQUENCY (GHz) 5V
5.5V
22
24
39 GHz 40 GHz
Output IM3 @ Vdd = +6V
70
70
60
60
IM3 (dBc)
IM3 (dBc)
20
37 GHz 38 GHz
6V
Output IM3 @ Vdd = +5.5V
50
40
30
50
40
30
20
20 10
12
14
16
18
20
22
24
10
12
14
16
Pout/TONE (dBm)
18
20
22
24
Pout/TONE (dBm)
37 GHz 38 GHz
39 GHz 40 GHz
37 GHz 38 GHz
Power Compression @ 38 GHz
39 GHz 40 GHz
Power Compression @ 39 GHz 35
1950
30
1800
30
1800
25
1650
25
1650
20
1500
20
1500
15
1350
15
1350
10
1200
10
1200
5
1050
5
1050
900
0 -15
-12
-9
-6
-3
0
3
6
9
12
Pout(dBm), GAIN(dB), PAE(%)
1950
900
0 -15
-12
-9
INPUT POWER (dBm) Pout
Gain Idd
Idd (mA)
35
Idd (mA)
Pout(dBm), GAIN(dB), PAE(%)
18
Pout/TONE (dBm)
-6
-3
0
3
6
9
12
INPUT POWER (dBm) PAE
Pout
Gain
PAE
Idd
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Gain & Power vs. Supply Current @ 38.5 GHz
Reverse Isolation vs. Temperature
GAIN (dB), P1dB (dBm), Psat (dBm)
35
ISOLATION (dB)
-50
-60
-70
-80 37
38
39
30
25
20 800
40
900
1000
FREQUENCY (GHz) +25 C
1100
1200
Idd (mA)
+85 C
-40 C
GAIN
Gain & Power vs. Supply Voltage @ 38.5 GHz
P1dB
Psat
Power Dissipation 10
POWER DISSIPATION (W)
35 GAIN (dB), P1dB (dBm, Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
-40
30
25
20 5
5.5
9
8
7
6
5 -15
6
-12
-9
Vdd (V) GAIN
-6
-3
0
3
6
9
12
INPUT POWER (dBm)
P1dB
Psat
37 GHz 38 GHz
39 GHz 40 GHz
Detector Voltage vs. Temperature @ 38.5 GHz 10
Vref-Vdet (V)
1
0.1
0.01
0.001
0.0001 -20
-10
0
10
20
30
OUTPUT POWER (dBm) +25 C
5
+85 C
- 40 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
Drain Bias Voltage (Vdd)
+7V
RF Input Power (RFIN)
+21 dBm
Channel Temperature
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+5
1200
175 °C
+5.5
1200
Continuous Pdiss (T= 85 °C) (derate 95 mW/°C above 85 °C)
9.0 W
+6
1200
Thermal Resistance (channel to ground paddle)
10 °C/W
Operating Temperature
-65°C to +150°C
Storage Temperature
-40°C to 85°C
ESD Sensitivity (HBM)
Class 0, Passed 150V
Adjust Vgg1 to achieve Idd = 1200 mA
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC7229LS6
ALUMINA WHITE
Gold over Nickel
N/A [3]
H7229 XXXX
[1] 4-Digit lot number XXXX. [2] Max peak reflow temperature of 260 °C. [3] Not Applicable to air cavity packages.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number
7
1, 2, 10, 11
Function
Description
Pin Schematic
Vdd1, Vdd3, Vdd4, Drain bias voltage. External bypass capacitors of Vdd2 100 pF, 10 nF and 4.7 µF are required for each pin.
3, 9
Vgg1, Vgg2
Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 100 pF, 10 nF and 4.7 µF are required. Apply Vgg bias to either pin 3 or pin 9.
4, 8
N/C
These pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally.
5, 7, 13, 15
GND
These pins and the exposed ground paddle must be connected to RF/DC ground.
6
RF IN
This pin is AC coupled and matched to 50 Ohms.
16
Vref
DC voltage of diode biased through external resistor used for temperature compensation of Vdet. See application circuit.
12
Vdet
DC voltage representing RF output power rectified by diode which is biased through an external resistor. See application circuit.
14
RF OUT
This pin is AC coupled and matched to 50 Ohms.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
8
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
J2
OUT R2
C18 C6
C12
C7 C1
+
J6
VDET
C3
C10
C9
+ C15
600-00812-00-1
C16
GND
C11
C5
C17
U1 C4
C8
C2
C14
VD3 VG1
VD5 VD2
+
THRU CAL
C13
+
VREF GND GND GND
+
VD6 VD1
+
J5
R1
VD4 GND VG2
IN J1
List of Materials for Evaluation PCB EV1HMC7229LS6 Item
Description
J1 - J2
“K” Connector, SRI
J5 - J6
DC Pin
C1 - C6
100 pF Capacitor, 0402 Pkg.
C7 - C12
10000 pF Capacitor, 0603 Pkg..
C13 - C18
4.7 uF Capacitor, Case A Pkg.
R1 - R2
40.2K Ohm Resistor, 0402 Pkg.
U1
HMC7229LS6 Amplifier
PCB [2]
600-00812-00 Evaluation Board
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC7229LS6 v00.0513
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Notes
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
10
