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HMC789ST89E v02.0314
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Typical Applications
Features
The HMC789ST89E is ideal for:
High Output IP3: +42 dBm
• Cellular/4G
High Output P1dB: +25 dBm
• Fixed Wireless & WLAN
High Gain: 18 dB
• CATV, Cable Modem & DBS
Single Supply: +5V
• Microwave Radio & Test Equipment
45% PAE @ +25 dBm Pout
• IF & RF Applications
Industry Standard SOT89 Package
Functional Diagram
General Description The HMC789ST89E is a high linearity GaAs InGaP HBT gain block MMIC operating from 0.7 to 2.8 GHz and packaged in an industry standard SOT89 package. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +45 dBm. The high output IP3 and high gain make the HMC789ST89E ideal for use in PA driver & pre-driver applications in Cellular/4G and Fixed Wireless.
Electrical Specifications, TA = +25°C, Vs= +5V [1] Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
810 - 960 17
Gain Variation Over Temperature
Typ.
Max.
Min.
1710 - 1990
18
12
Typ.
Max.
2420 - 2700
13.5
10
Units MHz
11
dB
0.01
0.01
0.01
dB / °C
Input Return Loss
12
12
10
dB
Output Return Loss
20
15
10
dB
24
dBm
Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat)
21
23.5
23
25
22
25.5
27
26
dBm
Output Third Order Intercept (IP3) [2]
42
42
42
dBm
Noise Figure
3.8
3.8
3.8
Supply Current (Icq)
125
150
125
150
125
dB 150
mA
[1] Specifications and data reflect HMC789ST89E measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone output power of +10 dBm per tone, 1 MHz spacing.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Broadband Gain & Return Loss @ 900 MHz
Gain vs. Temperature @ 900 MHz
25
22 20 S21 S11 S22
5
GAIN (dB)
RESPONSE (dB)
15
-5
18 16 +25 C +85 C - 40 C
14 -15
-25 0.4
12
0.6
0.8
1
1.2
10 0.7
1.4
0.8
FREQUENCY (GHz)
Input Return Loss vs. Temperature @ 900 MHz
1
1.1
Output Return Loss vs. Temperature @ 900 MHz
0
0 -5
+25 C +85 C - 40 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
0.9 FREQUENCY (GHz)
-10
-15
-10 -15 +25 C +85 C - 40 C
-20 -25
-20 0.7
0.8
0.9
1
-30 0.7
1.1
0.8
FREQUENCY (GHz)
28
25
27
24
26
23 +25 C +85 C - 40 C
1.1
25 +25 C +85 C - 40 C
24
21 20 0.7
1
Psat vs. Temperature @ 900 MHz
26
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature @ 900 MHz
22
0.9 FREQUENCY (GHz)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
24
23
0.8
0.9 FREQUENCY (GHz)
1
1.1
22 0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
50
45
45 IP3 (dB)
IP3 (dB)
Output IP3 vs. Output Power @ 900 MHz
50
40
35
30 0.7
+25 C +85 C - 40 C
35
+25 C +85 C - 40 C
30 0.8
0.9
1
1.1
0
2
4
Noise Figure vs. Temperature @ 900 MHz +25 C +85 C - 40 C
12
14
16
18
+25 C +85 C - 40 C
ISOLATION (dB)
-10
4
2
-20
-30
0.8
0.85
0.9
0.95
-40 0.7
1
0.8
FREQUENCY (GHz)
0.9
1
1.1
FREQUENCY (GHz)
Gain, Power & IP3 vs. Supply Voltage @ 900 MHz
Power Compression @ 900 MHz 50 Pout (dBm), GAIN (dB), PAE (%)
GAIN (dB), P1dB (dBm), OIP3 (dBm)
10
0
6
40 Gain P1dB OIP3
30
20
10 4.5
8
Reverse Isolation vs. Temperature @ 900 MHz
8
0 0.75
6
SINGLE TONE POUT (dBm)
50
Pout Gain PAE
40
30
20
10
0 5 SUPPLY VOLTAGE
3
40
FREQUENCY (GHz)
NF (dB)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Output IP3 vs. Temperature @ 900 MHz Pout = 10 dBm Each Tone
5.5
-8
-4
0
4
8
12
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz ACPR vs. Supply Voltage @ 880 MHz CDMA IS95, 9 Channels Forward -30 CDMA IS95 Frequency: 880 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels
ACPR (dBc)
-40
4.5V 5V
-50
5.5V -60 -70 -80
Source ACPR
-90 0
2
4
6
8
10
12
14
16
18
20
22
CHANNEL POWER (dBm)
Broadband Gain & Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz 16
20
14
S21 S11 S22
0
GAIN (dB)
RESPONSE (dB)
10
12
+25 C +85 C - 40 C
-10
-20 1.2
1.4
1.6
1.8
2
2.2
2.4
10 1.7
2.6
1.8
Input Return Loss vs. Temperature @ 1900 MHz
2.1
2
2.1
0
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
2
Output Return Loss vs. Temperature @ 1900 MHz
0
+25 C +85 C - 40 C
-8
-12
-16 1.7
1.9 FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
-20
1.8
1.9 FREQUENCY (GHz)
2
2.1
-5
+25 C +85 C - 40 C
-10
-15
-20 1.7
1.8
1.9 FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
30
27
29
26
28
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature @ 1900 MHz
28
25 +25 C +85 C - 40 C
24
22 1.7
+25 C +85 C - 40 C
25
1.8
1.9
2
24 1.7
2.1
1.8
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 1900 MHz
45
45 IP3 (dB)
50
40
30 1.7
+25 C +85 C - 40 C
+25 C +85 C - 40 C
35
30 1.8
1.9
2
2.1
0
2
4
6
8
10
12
14
16
18
SINGLE TONE POUT (dBm)
Noise Figure vs. Temperature @ 1900 MHz
Reverse Isolation vs. Temperature @ 1900 MHz -10
+25 C +85 C - 40 C
+25 C +85 C - 40 C
-15 ISOLATION (dB)
6 NF (dB)
2.1
40
FREQUENCY (GHz)
4
2
0 1.7
2
Output IP3 vs. Output Power @ 1900 MHz
50
35
1.9 FREQUENCY (GHz)
8
-20
-25
1.8
1.9 FREQUENCY (GHz)
5
27 26
23
IP3 (dB)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB vs. Temperature @ 1900 MHz
2
2.1
-30 1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz
Power Compression @ 1900 MHz Pout (dBm), GAIN (dB), PAE (%)
GAIN (dB), P1dB (dBm), OIP3 (dBm)
40 Gain P1dB OIP3
30
20
Pout Gain PAE
40
30
20
10
0
10 4.5
5
-1
5.5
3
7
SUPPLY VOLTAGE
ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward
15
19
ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH
-20
-20
-30
ACPR (dBc)
-30
CDMA 2000 Frequency: 1960 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels
-40 ACPR (dBc)
11
INPUT POWER (dBm)
4.5V 5V 5.5V
-50 -60
W-CDMA Frequency: 2140 MHz Integration BW: 3.84 MHz 64 DPCH
-40
4.5V 5V 5.5V
-50 -60
-70 Source ACPR
-80
Source ACPR
-70
-90
-80 1
3
5
7
9
11
13
15
17
19
21
0
2
4
CHANNEL POWER (dBm)
6
8
10
12
14
16
18
20
CHANNEL POWER (dBm)
Broadband Gain & Return Loss @ 2600 MHz
Gain vs. Temperature @ 2600 MHz
20
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
50
50
14 13 12 GAIN (dB)
RESPONSE (dB)
10 S21 S11 S22
0
11 10
+25 C +85 C - 40 C
-10 9 -20 2.2
2.3
2.4
2.5
2.6
FREQUENCY (GHz)
2.7
2.8
2.9
8 2.3
2.4
2.5
2.6
2.7
2.8
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Input Return Loss vs. Temperature @ 2600 MHz
Output Return Loss vs. Temperature @ 2600 MHz 0
RETURN LOSS (dB)
-10
-15
-20
-25 2.3
2.4
2.5
2.6
2.7
+25 C +85 C - 40 C
-5
-10
-15
-20 2.3
2.8
2.4
2.5
FREQUENCY (GHz)
2.6
2.7
2.8
FREQUENCY (GHz)
P1dB vs. Temperature @ 2600 MHz
Psat vs. Temperature @ 2600 MHz
26
28 27
Psat (dBm)
P1dB (dBm)
25
24
26 25 +25 C +85 C - 40 C
24 23
22 2.3
+25 C +85 C - 40 C
2.4
2.5
2.6
23
2.7
22 2.3
2.8
2.4
2.5
FREQUENCY (GHz)
2.7
2.8
Output IP3 vs. Output Power @ 2600 MHz 50
45
45 IP3 (dB)
50
40
30 2.3
2.6
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 2600 MHz
+25 C +85 C - 40 C
35
40
+25 C +85 C - 40 C
35
30 2.4
2.5
2.6
FREQUENCY (GHz)
7
RETURN LOSS (dB)
+25 C +85 C - 40 C
-5
IP3 (dB)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
0
2.7
2.8
0
2
4
6
8
10
12
14
16
18
SINGLE TONE POUT (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Noise Figure vs. Temperature @ 2600 MHz
Reverse Isolation vs. Temperature @ 2600 MHz
NF (dB)
ISOLATION (dB)
+25 C +85 C - 40 C
6
4
+25 C +85 C - 40 C
-15
-20
2
0 2.3
2.4
2.5
2.6
2.7
-25 2.3
2.8
2.4
2.5
Gain, Power & IP3 vs. Supply Voltage @ 2600 MHz
2.8
40 Pout (dBm), GAIN (dB), PAE (%)
GAIN (dB), P1dB (dBm), OIP3 (dBm)
2.7
Power Compression @ 2600 MHz
50
40 Gain P1dB OIP3
30
20
10 4.5
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
Pout Gain PAE
30
20
10
0 5 SUPPLY VOLTAGE
5.5
0
5
10
15
20
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
-10
8
8
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Absolute Maximum Ratings Collector Bias Voltage (Vcc)
+6.0 V
RF Input Power (RFIN)(Vs +5Vdc)
+18 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C) (derate 13.0 mW/°C above 85 °C)
0.85 W
Thermal Resistance (junction to ground paddle)
77 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information Part Number
Package Body Material
Lead Finish
HMC789ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating MSL1
[2]
Package Marking [1] H789 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz Pin Descriptions Function
Description
1
RFIN
This pin is DC coupled. Off chip matching components are required. See Application Circuit herein.
3
RFOUT
RF output and DC Bias input for the amplifier. Off chip matching components are required. See Application Circuit herein.
2, 4
GND
These pins & package bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
10
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
900 MHz Application Circuit
11
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Recommended Component Values C1
10 pF
C2
100 pF
C3
100 pF
C4
1000 pF
C5
2.2 μF
C6
100 pF
C7
1.2 pF
L1
18 nH
L2
3.8 nH
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
List of Materials for 900 MHz Evaluation PCB 126222 Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
10 pF Capacitor, 0402 Pkg.
C2
100 pF Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0402 Pkg.
C5
2.2 µF Capacitor, Tantalum
C6
100 pF Capacitor, 0402 Pkg.
C7
1.2 pF Capacitor, 0402 Pkg.
L1
18 nH Inductor, 0402 Pkg.
L2
3.8 nH Inductor, 0402 Pkg.
U1
HMC789ST89E Linear Amplifier
PCB [2]
126220 Evaluation PCB
[1]
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
900 MHz Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
12
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
1900 MHz Application Circuit
13
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Recommended Component Values C1
2.2 pF
C2
5.0 pF
C3
100 pF
C4
1000 pF
C5
2.2 µF
C6
20 pF
C7
1.1 pF
L1
20 nH
R1
0.0 Ohm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
List of Materials for 1900 MHz Evaluation PCB 126223 Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
2.2 pF Capacitor, 0402 Pkg.
C2
5.0 pF Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0402 Pkg.
C5
2.2 µF Capacitor, Tantalum
C6
20 pF Capacitor, 0402 Pkg.
C7
1.1 pF Capacitor, 0402 Pkg.
L1
18 nH Inductor, 0402 Pkg.
R1
0.0 Ohm Resistor, 0402 Pkg.
U1
HMC789ST89E Linear Amplifier
PCB [2]
126220 Evaluation PCB
[1]
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
1900 MHz Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
14
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2600 MHz Application Circuit
15
This circuit was used to specify the performance for 2420-2700 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Recommended Component Values C1
1.5 pF
C2
1.5 pF
C3
100 pF
C4
1000 pF
C5
2.2 µF
C6
20 pF
C7
0.3 pF
L1
18 nH
L2
12 nH
R1
0.0 Ohm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC789ST89E v02.0314
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 -2.8 GHz
List of Materials for 2600 MHz Evaluation PCB 125682 Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
1.5 pF Capacitor, 0402 Pkg.
C2
1.5 pF Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0402 Pkg.
C5
2.2 µF Capacitor, Tantalum
C6
20 pF Capacitor, 0402 Pkg.
C7
0.3 pF Capacitor, 0402 Pkg.
L1
18 nH Inductor, 0402 Pkg.
R1
0.0 Ohm Resistor, 0402 Pkg.
U1
HMC789ST89E Linear Amplifier
PCB [2]
125220 Evaluation PCB
[1]
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2600 MHz Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
16