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HMC6981LS6 v01.0414
Amplifiers - Linear & Power - SMT
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Typical Applications
Features
The HMC6981LS6 is ideal for:
P1dB Output Power: +33.5 dBm
• Point-to-Point Radios
25% PAE @ +34.5 dBm Pout
• Point-to-Multi-Point Radios
Gain: 26 dB
• SATCOM
Output IP3: +43.5 dBm 50 Ohm Matched Input/Output Ceramic 6 x 6 mm High Frequency Air Cavity Package
Functional Diagram
General Description The HMC6981LS6 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34.5 dBm of saturated output power, and 25% PAE from a +6V supply. With an excellent output IP3 of +43.5 dBm, the HMC6981LS6 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The HMC6981LS6 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms.
Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1100 mA [1] Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
15 - 17 24
Gain Variation Over Temperature
27
23
Typ.
Max.
Units
17 - 20
GHz
26
dB dB/ °C
0.042
0.038
Input Return Loss
9
13
dB
Output Return Loss
13
15
dB
Output Power for 1 dB Compression (P1dB)
31
Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Total Supply Current (Idd)
33.5
dBm
34.5
33
31.5
34.5
dBm
42
43.5
dBm
1100
1100
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1100 mA typical. [2] Measurement taken at +6V @ 1100 mA, Pout / Tone = +20 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
32
20
30
10
28
S21 S11 S22
0 -10
26 24
-20
22
-30
20
-40
+25 C +85 C -40 C
18 13
14
15
16
17
18
19
20
21
22
15
16
FREQUENCY (GHz)
32
30
30
28
28
26 800 mA 900 mA 1000 mA 1100 mA 1200 mA 1300 mA 1400 mA
22 20
19
20
19
20
26 24
5V 5.5V 6V
22 20
18
18 15
16
17
18
19
20
15
16
FREQUENCY (GHz)
17
18
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
RETURN LOSS (dB)
-10 RETURN LOSS (dB)
18
Gain vs. Supply Voltage
32
GAIN (dB)
GAIN (dB)
Gain vs. Supply Current
24
17
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Gain vs. Temperature
30
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
-20
-30
+25 C +85 C -40 C
-40
-50
-10
-20 +25 C +85 C -40 C
-30
-40 15
16
17
18
FREQUENCY (GHz)
19
20
15
16
17
18
19
20
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
38
36
36
34
34 P1dB (dBm)
P1dB (dBm)
P1dB vs Supply Voltage
38
32 30
+25 C +85 C -40 C
28
30
5V 5.5V 6V
26 24
24 15
16
17
18
19
15
20
16
Psat vs. Temperature
18
36
36
34
34 Psat (dBm)
38
32 30
+25 C +85 C -40 C
30 5V 5.5V 6V
26
24 16
17
20
32
28
26
15
19
Psat vs. Supply Voltage
38
28
18
19
24
20
15
FREQUENCY (GHz)
38
36
36
34
34
32 30 800 mA 900 mA 1000 mA 1100 mA 1200 mA
26
17
18
19
20
19
20
Psat vs. Supply Current
38
28
16
FREQUENCY (GHz)
Psat (dBm)
P1dB (dBm)
17
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Supply Current
32 30
800 mA 900 mA 1000 mA 1100 mA 1200 mA
28 26
24
24 15
16
17
18
FREQUENCY (GHz)
3
32
28
26
Psat (dBm)
Amplifiers - Linear & Power - SMT
P1dB vs. Temperature
19
20
15
16
17
18
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
46
46
44
44
42
42
40
40
38 36
+25 C +85 C -40 C
34
38 36
800 mA 900 mA 1000 mA 1100 mA 1200 mA
34 32
32
30
30 15
16
17
18
19
15
20
16
17
FREQUENCY (GHz)
Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm
18
19
20
FREQUENCY (GHz)
Output IM3 @ Vdd = +5V
46
70
44 60
40
IM3 (dBc)
IP3 (dBm)
42
38 36
5V 5.5V 6V
34
50 40
15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
30
32 20
30 15
16
17
18
19
10
20
12
14
Output IM3 @ Vdd =+5.5V
16
18
20
24
Output IM3 @ Vdd = +6V
70
80 15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
70
60
IM3 (dBc)
60
IM3 (dBc)
22
Pout/TONE (dBm)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Output IP3 vs. Supply Current, Pout/tone = +20 dBm
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Temperature, Pout/tone = +20 dBm
50
40
15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
30
50 40 30 20
20 10
12
14
16
18
Pout/TONE (dBm)
20
22
24
10
12
14
16
18
20
22
24
Pout/TONE (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Power Compression @ 17.5 GHz
30
0
2750
-10
2500
-20
25
2250
20
2000 1750
15 Idd
10
1500
5
1250
0
1000
-10
-6
-2
2
6
10
ISOLATION (dB)
Pout(dBm), GAIN(dB), PAE(%)
Pout Gain PAE
35
Reverse Isolation vs. Temperature 3000
Idd (mA)
-40 -50 -60 -70 -80 -90
14
15
16
18
19
20
Gain & Power vs. Supply Voltage @ 17.5 GHz
Gain & Power vs. Supply Current @ 17.5 GHz 40
Gain (dB), P1dB (dBm), Psat (dBm)
40
35
30
25
GAIN (dB) P1dB (dBm) Psat (dBm)
35
30
25
GAIN (dB) P1dB (dBm) Psat (dBm)
20
20 800
900
1000
1100
1200
1300
5
1400
Idd (mA)
5.5
6
Vdd (V)
Detector Voltage vs. Temperature @ 17.5 GHz 10
12 15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
10
+25 C +85 C - 40 C
1 Vref-Vdet (V)
POWER DISSIPATION (W)
17
FREQUENCY (GHz)
Power Dissipation
8
0.1
0.01
6
0.001
4 -5
-2
1
4
7
INPUT POWER (dBm)
5
+25 C +85 C -40 C
-30
INPUT POWER (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - SMT
40
10
13
0.0001 -20
-10
0
10
20
30
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Low DC Power Mode, Vdd = 5.5V, Idd = 1000 mA 38
36
36
34
34
32 30 28
32 30 28
+25 C +85 C -40 C
26
+25 C +85 C -40 C
26
24
24 15
16
17
18
19
20
15
16
17
FREQUENCY (GHz)
Output IP3 vs. Temperature, Pout/tone = +20 dBm
20
80
44
15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
70
42 40
60 IM3 (dBc)
IP3 (dBm)
19
Output IM3 @ Vdd = +5.5V, 1000 mA
46
38 36 +25 C +85 C -40 C
34 32
50 40 30
30 28
20 15
16
17
18
19
20
10
12
14
16
FREQUENCY (GHz)
1950
30
PAE
1800 1650
20
1500
15
1350 Idd
10
1200
5
1050 900
0 -4
-2
0
2
4
INPUT POWER (dBm)
6
8
10
12
Idd (mA)
25
-6
22
24
10
POWER DISSIPATION (W)
35
Pout Gain
-8
20
Power Dissipation 2100
40
-10
18
Pout/TONE (dBm)
Power Compression @ 17.5 GHz Pout(dBm), GAIN(dB), PAE(%)
18
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Psat vs. Temperature
38
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz
8
6
4
2 -5
-2
1
4
7
10
13
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings Drain Bias Voltage (Vdd)
+6.5 Vdc
Gate Bias Voltage (Vgg)
-3 to 0 Vdc
RF Input Power (RFIN)
+18 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C) (derate 129 mW/°C above 85 °C)
11.7 W
Thermal Resistance (channel to ground paddle)
7.7 °C/W
Storage Temperature
-65 to 150 °C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 0, Passed 150V
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+5
1100
+5.5
1100
+6
1100
Adjust Vgg to achieve Idd = 1100 mA
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC6981LS6
ALUMINA WHITE
Gold over Nickel
N/A
H6981 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Pin Descriptions Function
Description
1, 2, 3, 10, 16
Vdd3, Vdd2, Vdd1, Vdd5, Vdd4
Drain bias voltage. External bypass capacitors of 100 pF, 10 nF, and 4.7 uF are required for each pin.
4, 9
Vgg1, Vgg2
Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass capacitors 100 pF, 10 nF, and 4.7 μF are required. Apply Vgg bias to either pin 4 or pin 9.
5, 7, 13, 15
GND
These pins and exposed ground paddle must be connected to RF/DC ground.
6
RFIN
This pin is DC coupled and matched to 50 Ohms.
11
Vref
DC voltage of diode biased through external resistor used for temperature compensation of Vdet. See Application Circuit.
12
Vdet
DC voltage representing RF output power rectified by diode which is biased through an external resistor. See Application Circuit.
14
RFOUT
This pin is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Amplifiers - Linear & Power - SMT
Pad Number
8
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
Amplifiers - Linear & Power - SMT
Application Circuit
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC6981LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz
Amplifiers - Linear & Power - SMT
Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC6981LS6 Item
Description
J1 - J4
"K" Connector, SRI
J5, J6
DC Pin
C1 - C5, C21, C22
100 pF Capacitor, 0402 Pkg.
C7 - C11, C24, C26
10000 pF Capacitor, 0603 Pkg.
C13 - C17, C28, C31
4.7 uF Capacitor, Case A Pkg.
R1, R2
42.6K Ohm Resistor, 0402 Pkg.
U1
HMC6981LS6 Amplifier
PCB [2]
600-00649-00 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
10
