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HMC797LP5E v02.0811
9
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
Typical Applications
Features
The HMC797LP5E is ideal for:
High P1dB Output Power: 28 dBm
• Test Instrumentation
High Psat Output Power: 29.5 dBm
• Microwave Radio & VSAT
High Gain: 13.5 dB
• Military & Space
High Output IP3: 39 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 400 mA
• Fiber Optics
50 Ohm Matched Input/Output
Amplifiers - Linear & Power - SMT
32 Lead 5x5 mm SMT Package: 25 mm²
Functional Diagram
General Description The HMC797LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 13.5 dB of gain, 39 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10 V supply. This versatile PA exhibits a positive gain slope from 4 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into mutli-chipmodules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA* Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
DC - 12 11
Typ.
Max.
Min.
12 - 18
12.5
11
13.5
11
Typ.
Max.
Units
18 - 22
GHz
13.5
dB
Gain Flatness
±0.7
±0.5
±0.5
dB
Gain Variation Over Temperature
0.012
0.008
0.008
dB/ °C dB
Input Return Loss
13
15
15
Output Return Loss
12
16
13
dB
25.5
dBm
Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat)
26
28
25
27
23.5
29.5
29
27
dBm
Output Third Order Intercept (IP3)
39
37
35
dBm
Noise Figure
3.5
4
6
dB
Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
440
400
440
400
440
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Gain vs. Temperature
20
18
10
16 14
-10
12
9
10 -20
+25C +85C -40C
8 -30 0
5
10
15
20
25
6
30
0
FREQUENCY (GHz)
0
-10
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
12
16
20
24
Output Return Loss vs. Temperature
0
-20
+25C +85C -40C
-20
+25C +85C -40C
-30
-40
-40 0
4
8
12
16
20
0
24
4
8
12
16
20
24
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Low Frequency Gain & Return Loss
10
25 15
+25C +85C -40C
8
5
NOISE FIGURE(dB)
RESPONSE (dB)
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-30
4
S21 S11 S22
-5 -15 -25
Amplifiers - Linear & Power - SMT
S21 S11 S22
0
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
6
4
2 -35 -45 0.00001
0 0.0001
0.001
0.01
0.1
FREQUENCY (GHz)
1
10
0
4
8
12
16
20
24
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-2
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz P1dB vs. Supply Voltage
32
32
30
30
28
28
P1dB (dBm)
9
P1dB (dBm)
P1dB vs. Temperature
26 +25C +85C -40C
24
22 20
20 0
4
8
12
16
20
0
24
4
8
16
20
24
Psat vs. Supply Voltage
32
32
30
30
28
28
Psat (dBm)
Psat (dBm)
Psat vs. Temperature
26 +25C +85C -40C
24
12
FREQUENCY (GHz)
FREQUENCY (GHz)
26 +8V +10V +11V
24
22
22
20
20 0
4
8
12
16
20
24
0
4
FREQUENCY (GHz)
30
30
28
28
Psat (dBm)
32
26
16
20
24
20
24
300 mA 350 mA 400 mA
26 24
300 mA 350 mA 400 mA
22
12
Psat vs. Supply Current
32
24
8
FREQUENCY (GHz)
P1dB vs. Supply Current
P1dB (dBm)
Amplifiers - Linear & Power - SMT
+8V +10V +11V
24
22
22
20
20 0
4
8
12
16
FREQUENCY (GHz)
9-3
26
20
24
0
4
8
12
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC797LP5E GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Output IP3 vs. Supply Voltage @ Pout = 18 dBm / Tone
45
45
40
40
35
35
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Temperature @ Pout = 18 dBm / Tone
30
+25C +85C -40C
25
30
9
+8V +10V +11V
25
20
20 0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
12
16
20
24
FREQUENCY (GHz)
Output IP3 vs. Supply Currents @ Pout = 18 dBm / Tone
Output IM3 @ Vdd = +8V
45
70 60
40
IM3 (dBc)
IP3 (dBm)
50 35 300 mA 350 mA 400 mA
30
40 30 20
25
2 GHz 10 GHz 18 GHz 22 GHz
10
20
0 0
4
8
12
16
20
24
10
12
14
FREQUENCY (GHz)
70
60
60
50
50 IM3 (dBc)
IM3 (dBc)
70
40 30
20
22
24
20
22
24
40 30 20
2 GHz 10 GHz 18 GHz 22 GHz
10
18
Output IM3 @ Vdd = +11V
Output IM3 @ Vdd = +10V
20
16
Pout/TONE (dBm)
2 GHz 10 GHz 18 GHz 22 GHz
10
0
Amplifiers - Linear & Power - SMT
v02.0811
0 10
12
14
16
18
Pout/TONE (dBm)
20
22
24
10
12
14
16
18
Pout/TONE (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-4
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 10 GHz
Reverse Isolation vs. Temperature 0
9
ISOLATION (dB)
-10
Pout (dBm), GAIN (dB), PAE (%)
32 +25C +85C -40C
-20 -30 -40 -50
Pout Gain PAE
24 20 16 12 8 4 0
-70 0
4
8
12
16
20
24
0
3
9
12
15
18
21
24
Gain & Power vs. Supply Voltage @ 10 GHz
Gain & Power vs. Supply Current @ 10 GHz 35
Gain (dB), P1dB (dBm), Psat (dBm)
35
30
25
Gain P1dB Psat
20
15
10 300
6
INPUT POWER (dBm)
FREQUENCY (GHz)
30
25
Gain P1dB Psat
20
15
10 320
340
360
380
400
8
9
Idd (mA)
10
11
Vdd (V)
Power Dissipation 6
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - SMT
-60
28
5 4 3 2
Max Pdis @ 85C 2 GHz 10 GHz 20 GHz
1 0 0
4
8
12
16
20
INPUT POWER (dBm)
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Second Harmonics vs. Vdd @ Pout = 18 dBm, Idd = 400 mA [1]
70
70
60
60
50
SECOND HARMONIC (dBc)
+25C +85C -40C
40 30 20 10
+8V +10V +11V
50 40
9
30 20 10
0
0 0
4
8
12
16
20
24
0
4
FREQUENCY(GHz)
16
20
24
Second Harmonics vs. Pout Vdd = 10V & Vgg = 3.5V & Idd = 400 mA
70
70
60
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
12
FREQUENCY(GHz)
Second Harmonics vs. Idd @ Pout = 18 dBm, Vgg2 = 3.5V
300 mA 350 mA 400 mA
50
8
40 30 20 10
+10 dBm +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm
50 40 30 20 10
0
0 0
4
8
12
16
FREQUENCY(GHz)
20
24
0
4
8
12
16
20
24
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Amplifiers - Linear & Power - SMT
SECOND HARMONIC (dBc)
Second Harmonics vs. Temperature @ Pout = 18 dBm, Vdd = 10V & Vgg = 3.5V
9-6
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Reliability Information
Absolute Maximum Ratings
Amplifiers - Linear & Power - SMT
9
Nominal Drain Supply to GND
+12.0 V
Gate Bias Voltage (Vgg1)
-3.0 to 0 Vdc
Gate Bias Current (Igg1)
< +10 mA
Gate Bias Voltage (Vgg2)
+2.0 V to (Vdd - 6.5 V)
Gate Bias Current (Igg2)
< +10 mA
Continuous Pdiss (T= 85 °C) (derate 69 mW/°C above 85 °C)
4.5 W
RF Input Power
+27 dBm
Output Power into VSWR >7:1
+29 dBm
Storage Temperature
-65 to 150 °C
Max Peak Reflow Temperature
260 °C
ESD Sensitivity (HBM)
Class 1A
Junction Temperature to Maintain 1 Million Hour MTTF
150 °C
Nominal Junction Temperature (T=85 °C, Vdd = 10 V)
144 °C
Thermal Resistance (channel to ground paddle)
14.6 °C/W
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+9
400
+10
400
+11
400
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information Part Number
Package Body Material
Lead Finish
HMC797LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating MSL1
[2]
Package Marking [1] H797 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
9-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
Pin Descriptions Function
Description
GND
These pins & exposed ground paddle must be connected to RF/DC ground.
2
VGG2
Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3.5V should be applied to Vgg2.
3, 7, 10 - 12, 14, 18, 19, 23, 26 28, 31
N/C
No connection required. These pins may be connected to RF/DC ground without affecting performance.
5
RFIN
This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required.
13
VGG1
Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note.
15
ACG4
Interface Schematic
Low frequency termination. Attach bypass capacitor per application circuit herein. 16
ACG3
21
RFOUT & VDD
29
ACG2
30
ACG1
RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9 Amplifiers - Linear & Power - SMT
Pin Number 1, 4, 6, 8, 9, 17, 20, 22, 24, 25, 32 Package Bottom
9-8
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
Evaluation PCB
Amplifiers - Linear & Power - SMT
9
List of Materials for Evaluation PCB 130784 [1] Item
Description
J1, J2
SMA Connectors
J3, J4
DC Pins
C1 - C4
100 pF Capacitor, 0402 Pkg.
C5, C8
10 kpF Capacitor, 0402 Pkg.
C9 - C11
4.7 µF Capacitor, Tantalum
R1, R2
0 OHM Resistor, 0402 Pkg
U1
HMC797LP5E Power Amplifier
PCB [2]
127135 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
9-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC797LP5E v02.0811
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz
Application Circuit
Amplifiers - Linear & Power - SMT
9
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9 - 10