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HMC5846LS6 v01.0414
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Typical Applications
Features
The HMC5846LS6 is ideal for:
Saturated Output Power: 35.5 dBm @ 30% PAE
• Point-to-Point Radios
High Output IP3: 42.5 dBm
• Point-to-Multi-Point Radios
High Gain: 31 dB
• VSAT & SATCOM
DC Supply: +7V @ 1200 mA
• Military & Space
No External Matching Required
Functional Diagram
General Description The HMC5846LS6 is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated power detector which operates between 12 and 16 GHz. The HMC5846LS6 provides 31 dB of gain, 35.5 dBm of saturated output power, and 30% PAE from a +7V supply. The HMC5846LS6 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications.
Electrical Specifications, TA = +25 °C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +7V, Idd = 1200 mA [1] Parameter
Min.
Frequency Range Gain
26
Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB)
Typ. 12 - 16
32.5
Max.
Units GHz
31
dB
0.06
dB/ °C
10
dB
17
dB
34.5
dBm
Saturated Output Power (Psat)
35.5
dBm
Output Third Order Intercept (IP3)[2]
42.5
dBm
Total Supply Current (Idd)
1200
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +7V @ 1200 mA, Pout / Tone = +22 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency
Gain vs. Temperature
40 30
GAIN (dB)
RESPONSE (dB)
34 20 10 0
30
26
-10 22 -20 -30
18 10
11
12
13 14 15 FREQUENCY (GHz)
S21
16
17
18
11
13
S11
S22
+25C
15
16
17
+85C
-40C
Output Return Loss vs. Temperature
0
0 -5 RETURN LOSS (dB)
-4
-8
-12
-16
-10 -15 -20 -25
-20
-30 11
12
13
14
15
16
17
11
12
13
FREQUENCY (GHz) +25C
14
15
16
17
FREQUENCY (GHz)
+85C
-40C
+25C
P1dB vs. Temperature
+85C
-40C
P1dB vs. Supply Voltage
38
38
36
36
34
34
P1dB (dBm)
P1dB (dBm)
14
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
12
AMPLIFIERS - LINEAR & POWER - SMT
38
32
32
30
30
28
28 26
26 12
13
14
15
16
12
13
+25C
+85C
14
15
16
FREQUENCY (GHz)
FREQUENCY (GHz) -40C
5V
6V
7V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
38
36
36 Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
38
34
32
30
34
32
30
28
28 12
13
14
15
16
12
13
FREQUENCY (GHz) +25C
+85C
5V
-40C
15
16
6V
7V
Psat vs. Supply Current (Idd) 38
36
36
34
34 Psat(dBm)
38
32
32
30
30
28
28
26
26 12
13
14
15
16
12
13
FREQUENCY (GHz)
14
15
16
FREQUENCY (GHz)
900mA 1000mA
1100mA 1200mA
900mA 1000mA
Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48
48
46
46
44
44
42
42
40 38
40 38
36
36
34
34
32
32
30
1100mA 1200mA
Output IP3 vs. Supply Current, Pout/Tone = +22 dBm
IP3 (dBm)
IP3 (dBm)
14 FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
P1dB (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Temperature
30 12
13
14
15
16
12
13
FREQUENCY (GHz) +25C
+85C
14
15
16
FREQUENCY (GHz) -40C
900mA 1000mA
1100mA 1200mA
[1] Footnote if needed
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Output IM3 @ Vdd = +5V
48
80
46
70
44
60 IM3 (dBc)
IP3 (dBm)
42 40 38
50 40 30
36 34
20
32
10
30
0 12
13
14
15
16
10
12
14
FREQUENCY (GHz) 5V
6V
7V
20
22
24
14 GHz 15 GHz
16 GHz
Output IM3 @ Vdd = +7V
80
80
70
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
18
12 GHz 13 GHz
Output IM3 @ Vdd = +6V
40
40
30
30
20
20
10
10 0
0 10
12
14
16
18
20
22
10
24
12
14
12 GHz 13 GHz
14 GHz 15 GHz
18
12 GHz 13 GHz
16 GHz
Power Compression @ 13 GHz
20
22
24
14 GHz 15 GHz
16 GHz
Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%)
40 35 30 25 20 15 10 5 0 -10
16
Pout/TONE (dBm)
Pout/TONE (dBm)
Pout (dBm), GAIN (dB), PAE (%)
16
Pout/TONE (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm
-8
-6
-4
-2
0
2
4
6
8
35 30 25 20 15 10 5 0 -10
-8
-6
-4
INPUT POWER (dBm) Pout
Gain
-2
0
2
4
6
8
10
INPUT POWER (dBm) PAE
Pout
Gain
PAE
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
4
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Power Compression @ 15 GHz
Detector Voltage Over Temperature 10
30 Vref-Vdet (V)
Pout (dBm), GAIN (dB), PAE (%)
35
25 20 15
0.1
5 0.01 -8
-6
-4
-2
0
2
4
6
8
10
-5
3
11
Pout
Gain
27
12.5GHz +25C 12.5GHz +85C 12.5GHz -55C
PAE
35
15.5GHz +25C 15.5GHz +85C 15.5GHz -55C
Gain & Power vs. Supply Current @ 14 GHz
Reverse Isolation vs. Temperature
40
Gain (dB), P1dB (dBm), Psat (dBm)
0 -10 -20 -30 -40 -50 -60 -70 -80
35
30
25
20
-90 11
12
13
14
15
16
900
17
1000
+25C
1100
1200
Idd (mA)
FREQUENCY (GHz) +85C
Gain
-40C
P1dB
Psat
Power Dissipation
45
10 9 POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
19
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Gain & Power vs. Supply Voltage @ 14 GHz 40
35
30
25
8 7 6 5 4 3 2 1
20 5
5.5
6
6.5
7
Vdd (V) Gain
5
1
10
0 -10
ISOLATION (dB)
AMPLIFIERS - LINEAR & POWER - SMT
40
P1dB
0 -10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm) Psat
Max Pdis @ 85C 12 GHz 13 GHz
14 GHz 15 GHz 16 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
Drain Bias Voltage (Vdd)
+8V
RF Input Power (RFIN)
+24 dBm
Channel Temperature
Reliability Information Junction Temperature to Maintain 1 Million Hour MTTF
150 °C
150 °C
Nominal Junction Temperature (T= 85 °C and Pin = 10 dBm)
90 °C
Continuous Pdiss (T= 85 °C) (derate 133 mW/°C above 85 °C)
8.6 W
Operating Temperature
-55 to +85 °C
Thermal Resistance (channel to ground paddle)
7.55 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A Pass 250V
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC5846LS6
ALUMINA WHITE
Gold over Nickel
N/A
H5846 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Pin Descriptions
7
Pad Number
Function
Description
6
RFIN
This Pin is DC coupled and matched to 50 Ohms over the operating frequency.
1-4 9, 10
Vdd4, Vdd3, Vdd2, Vdd1, Vdd5, Vdd6
Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pin followed by 0.01 μF capacitors and a 4.7 μF capacitors.
8
Vgg1
Gate controlled amplifier. External bypass capacitors of 100 pF are required followed by 0.01 μF capacitors and a 4.7 μF capacitors.
5, 7, 13, 15, 16
GND
These Pins and Package bottom must be connected to RF/DC ground.
11
Vref
DC voltage of diode biased through external resistor, used for temperature compensation of Vdet.
12
Vdet
DC voltage representing RF output rectified by diode which is biased through an external resistor.
14
RFOUT
This Pin is DC coupled and matched to 50 Ohms.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC5846LS6 v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC5846L56 Item
Description
J1, J2
PCB Mount K Connectors, SRI
J5, J6
DC Pins
C1 - C6, C20, C21, C23
100 pF Capacitors, 0402 Pkg.
C7 - C12, C19, C25, C26
0.01 μF Capacitors, 0603 Pkg.
C13 - C18, C29 - C31
4.7 μF Capacitors, Case A Pkg.
R1 - R2
40.2 kOhm Resistor, 0402 Pkg.
U1
HMC5846LS6 Amplifier
PCB [2]
128996 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
8
