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HMC637ALP5E v01.0914
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications
Features
The HMC637ALP5E wideband PA is ideal for:
P1dB Output Power: +29 dBm
• Telecom Infrastructure
Gain: 13 dB
• Microwave Radio & VSAT
Output IP3: +44 dBm
• Military & Space
50 Ohm Matched Input/Output
• Test Instrumentation
32 Lead 5x5mm Lead SMT Package: 25 mm2
• Fiber Optics
Functional Diagram
General Description The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +44 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637ALP5E ideal for EW, ECM, Radar and test equipment applications. The HMC637ALP5E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.
Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA[1] Parameter
Frequency
Min.
Gain
DC - 6.0 GHz
12
Gain Flatness
DC - 6.0 GHz
±0.75
dB
Gain Variation Over Temperature
DC - 6.0 GHz
0.015
dB/ °C
Input Return Loss
DC - 6.0 GHz
12
dB
Output Return Loss
DC - 6.0 GHz
15
dB
Output Power for 1 dB Compression (P1dB)
DC - 6.0 GHz
29
dBm
Saturated Output Power (Psat)
DC - 6.0 GHz
31
dBm
DC - 6.0 GHz
44
dBm
DC - 2.0 GHz 2.0 - 6.0 GHz
12 5
dB dB
Output Third Order Intercept (OIP3) Noise Figure
[2]
Supply Current (Idd)
27
320
Typ.
Max.
13
400
Units dB
480
mA
[1] Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. [2] Two-Tone Output Power = +10 dBm Each Tone, 1 MHz Spacing.
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain & Return Loss
Gain vs. Temperature
20
18
14 12 GAIN (dB)
RESPONSE (dB)
10
0
-10
10 8 6 4
-20
2 -30
0 0
2
4
6
8
0
2
FREQUENCY (GHz) S21
S11
+25C
S22
Input Return Loss vs. Temperature
6
8
0
-5
-5
-10 -15 -20
+85C
-40C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
4 FREQUENCY (GHz)
-25
-10 -15 -20 -25
-30
-30 0
2
4
6
8
0
2
FREQUENCY (GHz) +25C
4
6
8
FREQUENCY (GHz)
+85C
-40C
+25C
Reverse Isolation vs. Temperature
+85C
-40C
AMPLIFIERS - LINEAR & POWER - SMT
16
Noise Figure vs. Temperature 24
0
22 20 NOISE FIGURE (dB)
ISOLATION (dB)
-10 -20 -30 -40
18 16 14 12 10 8 6
-50
4 2
-60 0
2
4
6
8
0
2
+25C
+85C
4
6
8
FREQUENCY (GHz)
FREQUENCY (GHz) -40C
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
2
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
32
30
30
28
28
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature
32
26
26
24
24
22
22
20
20 0
2
4
6
8
0
2
4
FREQUENCY (GHz) +85C
-40C
+25C
60 55 50 45 40 35 30 25 20 2
4
+85C
6
+85C
-40C
8
50 45 40 35 30 25 20 15 10 11.5
12
FREQUENCY (GHz)
+25C
8
Gain, Power & Output IP3 vs. Supply Voltage @ 3 GHz, Fixed Vgg
Output IP3 vs. Temperature
0
6
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
+25C
IP3 (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
P1dB vs. Temperature
12.5
Vdd (V) Gain P1dB
-40C
Gain & Return Loss vs. Frequency, Log Scale
Psat OIP3
Output IP3 vs. Temperature, Log Scale 60
20
55 50 IP3 (dBm)
RESPONSE (dB)
10
0
-10
45 40 35 30
-20 25 20
-30 0.01
0.1
1
10
S21
3
S11
0
0.1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz) S22
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
Drain Bias Voltage (Vdd)
+14 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
+4 to +7 Vdc
RF Input Power (RFIN)(Vdd = +12 Vdc)
+25 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C) (derate 95 mW/°C above 85 °C)
8.6 W
Thermal Resistance (channel to ground paddle)
10.5 °C/W
Storage Temperature
-65 to 150 °C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 1B
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)[1]
11.5
400
12.0
400
12.5 400 [1] Vgg1 set intitially for nominal bias condition of Vdd = +12 V and Vgg2 = +5V to achieve Idd = 400 mA typical. Then adjusting Vdd +/- 0.5 V from 12V to measure Idd variation.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
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HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information Part Number
Package Body Material
Lead Finish
HMC637ALP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating MSL3
[1]
Package Marking [2] H637A XXXX
[1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Pin Descriptions Function
Description
N/C
No connection. These pins may be connected to RF ground. Performance will not be affected.
2
Vgg2
Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. Attach bypass capacitor per application circuit herein.
5
RFIN
This pad is DC coupled and matched to 50 Ohms.
13
Vgg1
Gate Control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” Application Note.
15
ACG4
Interface Schematic
Low frequency termination. Attach bypass capacitor per application circuit herein. 16
ACG3
21
RFOUT & Vdd
29
ACG2
30
ACG1
Ground Paddle
GND
RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein.
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number 1, 3, 4, 6 - 12, 14, 17, 18, 19, 20, 22 - 28, 31, 32
Ground paddle must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
6
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
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NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. NOTE 2: Power Up Bias Sequence A) Set Vgg1 to -2V B) Set Vdd to +12V C) Set Vgg2 to +5V D) Adjust Vgg1 to achieve Idd for 400 mA
Power Down Sequence A) Remove Vgg2 Bias B) Remove Vdd Bias C) Remove Vgg1 Bias
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC637ALP5E v01.0914
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation PCB EV1HMC637ALP5 Item
Description
J1 - J2
SRI SMA Connector
J3 - J4
2mm Molex Header
C1, C2
100 pF Capacitor, 0402 Pkg.
C3 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C9
4.7 µF Capacitor, Tantalum
U1
HMC637ALP5E
PCB [2]
109765 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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