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HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Amplifiers - Linear & Power - Chip
3
Typical Applications
Features
The HMC930 is ideal for:
High P1dB Output Power: 22 dBm
• Test Instrumentation
High Psat Output Power: 24 dBm
• Microwave Radio & VSAT
High Gain: 13 dB
• Military & Space
High Output IP3: 33.5 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 175 mA
• Fiber Optics
50 Ohm Matched Input/Output Die Size: 2.82 x 1.50 x 0.1 mm
Functional Diagram
General Description The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA* Parameter
Min.
Frequency Range Gain
Typ.
Max.
Min.
DC - 12 11.5
13.5
Typ.
Max.
Min.
12 - 32 11
13
10
Typ.
Max.
Units
32 - 40
GHz
12
dB
Gain Flatness
±0.5
±0.3
±1.0
dB
Gain Variation Over Temperature
0.01
0.017
0.032
dB/ °C dB
Input Return Loss
18
16
15
Output Return Loss
28
20
20
dB
20
dBm
23
dBm
Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat)
21
23
20
22
25
24
18
Output Third Order Intercept (IP3)
36
33.5
29
dBm
Noise Figure
4.5
5
7.5
dB
Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Gain & Return Loss
Gain vs. Temperature
20
18 16
0 -10 -20
12 10
-30
+25C +85C -55C
8
-40 0
5
10
15
20
25
30
35
40
45
6
50
0
FREQUENCY (GHz)
8
12
-10
-10
RETURN LOSS (dB)
0
-20
20
24
28
32
36
40
44
+25C +85C -55C
-20
-30
+25C +85C -55C
-40
-40 0
4
8
12
16
20
24
28
32
36
40
0
44
4
8
12
20
24
28
32
36
28
32
40
44
Noise Figure vs. Temperature
Low Frequency Gain & Return Loss
10
20 10
+25C +85C -55C
NOISE FIGURE(dB)
8
0
S21 S11 S22
-10 -20 -30
6
4
2
-40 -50 0.00001
16
FREQUENCY (GHz)
FREQUENCY (GHz)
RESPONSE (dB)
16
Output Return Loss vs. Temperature
0
-30
4
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
3
14
Amplifiers - Linear & Power - Chip
S21 S11 S22
GAIN (dB)
RESPONSE (dB)
10
0 0.0001
0.001
0.01
0.1
FREQUENCY (GHz)
1
10
0
4
8
12
16
20
24
36
40
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
3-2
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz P1dB vs. Supply Voltage
P1dB vs. Temperature
28
28 +25C +85C -55C
26
P1dB (dBm)
24 22
24 22
20
20
18
18
+8V +10V +11V
16
16 0
4
8
12
16
20
24
28
32
36
40
0
44
4
8
12
16
20
24
28
32
36
40
44
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature
Psat vs. Supply Voltage
30
30 +25C +85C -55C
28
28
26
Psat (dBm)
Psat (dBm)
Amplifiers - Linear & Power - Chip
3
P1dB (dBm)
26
24
26 24
22
22
20
20
18
+8V +10V +11V
18 0
4
8
12
16
20
24
28
32
36
40
44
0
4
8
12
FREQUENCY (GHz)
16
20
24
28
32
36
40
44
32
36
40
44
FREQUENCY (GHz)
P1dB vs. Supply Current
Psat vs. Supply Current 28
28 26
26
22
Psat (dBm)
P1dB (dBm)
24
20 18
24 22 125 mA 175 mA
20
16 125 mA 175 mA
14
18 16
12 0
4
8
12
16
20
24
28
FREQUENCY (GHz)
3-3
32
36
40
44
0
4
8
12
16
20
24
28
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone 40
38
38
36
36
34
34
32 30
+25C +85C -55C
28
3
32 30
+8V +10V +11V
28 26
26
24
24 0
4
8
12
16
20
24
28
32
36
40
0
44
4
8
12
Output IP3 vs. Supply Currents @ Pout = 14 dBm / Tone
24
28
32
36
40
44
80
38
125 mA 175 mA
36
70 60
34 32
IM3 (dBc)
IP3 (dBm)
20
Output IM3 @ Vdd = +8V
40
30 28 26
50 40 30 20
24
2 GHz 8 GHz 14 GHz 20 GHz
10
22 20
28 GHz 34 GHz 40 GHz
0 0
4
8
12
16
20
24
28
32
36
40
44
0
2
4
FREQUENCY (GHz)
70
70
60
60
50
50
IM3 (dBc)
80
40 30 2 GHz 8 GHz 14 GHz 20 GHz
10
8
10
12
14
16
14
16
Output IM3 @ Vdd = +11V
80
20
6
Pout/TONE (dBm)
Output IM3 @ Vdd = +10V
IM3 (dBc)
16
FREQUENCY (GHz)
FREQUENCY (GHz)
40 30 20
28 GHz 34 GHz 40 GHz
2 GHz 8 GHz 14 GHz 20 GHz
10
0
Amplifiers - Linear & Power - Chip
40
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Temperature @ Pout = 14 dBm / Tone
28 GHz 34 GHz 40 GHz
0 0
2
4
6
8
10
Pout/TONE (dBm)
12
14
16
0
2
4
6
8
10
12
Pout/TONE (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
3-4
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Power Compression @ 20 GHz
Reverse Isolation vs. Temperature
32 +25C +85C -55C
ISOLATION (dB)
-20 -30 -40 -50 -60 -70 -80
28
Pout Gain PAE
24 20 16 12 8 4 0
0
4
8
12
16
20
24
28
32
36
40
44
0
3
6
9
12
15
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain & Power vs. Supply Current @ 20 GHz
Gain & Power vs. Supply Voltage @ 20 GHz 35
Gain (dB), P1dB (dBm), Psat (dBm)
35
Gain P1dB Psat
30
25
20
15
125
Gain P1dB Psat
30
25
20
15
10
10 135
145
155
165
8
175
9
Idd (mA)
10
11
Vdd (V)
Power Dissipation 3
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - Chip
3
Pout (dBm), GAIN (dB), PAE (%)
0 -10
2
4 GHz 10 GHz 20 GHz 30 GHz 40 GHz
1
0 0
3
6
9
12
15
INPUT POWER (dBm)
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175mA
Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175mA [1] 70
+25C +85C -40C
50 40 30 20
60
3
+8V +10V +11V
50 40 30 20 10
10
0
0 0
4
8
12
16
20
0
24
4
8
12
16
20
24
FREQUENCY(GHz)
FREQUENCY(GHz)
Second Harmonics vs. Pout Vdd = 10V & Vgg = 3.5V & Idd = 175mA
SECOND HARMONIC (dBc)
70 +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm
60 50 40 30 20 10 0 0
4
8
12
16
20
24
FREQUENCY(GHz)
Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
12V
Output Power into VSWR >7:1
24 dBm
-3 to 0 Vdc
Storage Temperature
-65 to 150 °C
For Vdd = 12V, Vgg2 = 5.5V Idd >145mA
Operating Temperature
-55 to 85 °C
For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V For Vdd < 8.5V, Vgg2 must remain > 2V
RF Input Power (RFIN)
17 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C) (derate 69 mW/°C above 85 °C)
2.1 W
Thermal Resistance (channel to die bottom)
Amplifiers - Linear & Power - Chip
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
70
31.1 °C/W
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+9
175
+10
175
+11
175
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
3-6
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Outline Drawing
Amplifiers - Linear & Power - Chip
3
Die Packaging Information
[1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
3-7
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Pad Descriptions Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass capacitor per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass capacitor per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
3 Amplifiers - Linear & Power - Chip
Pad Number
3-8
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Assembly Diagram
Amplifiers - Linear & Power - Chip
3
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC930 v00.0610
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes.
0.102mm (0.004”) Thick GaAs MMIC Wire Bond
0.076mm (0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
3 Amplifiers - Linear & Power - Chip
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
3 - 10